Semiconductor
SDV251S
Variable Capacitance Diode
Features
•
High capacitance ratio in low voltage
•
Low series resistance (
r
S
=0.6Ω Max.)
Application
•
AFC, VCO application
Ordering Information
Type No.
SDV251S
Marking
V7
Package Code
SOT-23
Outline Dimensions
2.4±0.1
1.30±0.1
unit :
mm
1
1.90 Typ.
3
2
0.4 Typ.
0.45~0.60
2.9±0.1
3
1
0.2 Min.
2
1.12 Max.
KSD-2094-001
0.124
PIN Connections
1. Anode
2. NC
3. Cathode
0.38
0~0.1
-0.03
+0.05
1
SDV251S
Absolute maximum ratings
Characteristic
Reverse voltage
Junction temperature
Storage temperature
Ta=25°C
Symbol
V
R
T
j
T
stg
Ratings
12
150
-55 ~ 150
Unit
V
°C
°C
Electrical Characteristics
Characteristic
Reverse Voltage
Reverse Current
Diode Capacitance
Capacitance Ratio
Series resistance
Ta=25°C
Symbol
V
R
I
R
C
1.6V
C
5.0V
n
I
R
=10
㎂
V
R
=9V
Test Condition
Min. Typ. Max.
12
-
23
11
1.7
-
-
-
-
-
2.0
-
-
200
38
19
2.2
0.6
Unit
V
㎁
㎊
-
Ω
V
R
=1.6V, f=1MHz
V
R
=5V, f=1MHz
C
1.6V
/ C
5.0V
V
R
=1V, f=50MHz
r
S
KSD-2094-001
2
SDV251S
℃
℃
KSD-2094-001
3
