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SE20DJHM3/I

Rectifiers 20A 600V AEC-Q101 ESD Rectifr

器件类别:半导体    分立半导体   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
Vishay(威世)
产品种类
Product Category
Rectifiers
RoHS
Details
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
TO-263AC-3
Vr - Reverse Voltage
600 V
If - Forward Current
20 A
类型
Type
Standard Recovery Rectifiers
Configuration
Single
Vf - Forward Voltage
1.1 V
Max Surge Current
150 A
Ir - Reverse Current
25 uA
Recovery Time
3 us
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 175 C
资格
Qualification
AEC-Q101
系列
Packaging
Cut Tape
系列
Packaging
MouseReel
系列
Packaging
Reel
产品
Product
Rectifiers
工厂包装数量
Factory Pack Quantity
2000
单位重量
Unit Weight
0.019048 oz
文档预览
SE20DB, SE20DD, SE20DG, SE20DJ
www.vishay.com
Vishay General Semiconductor
Surface Mount ESD Capability Rectifiers
FEATURES
eSMP
®
Series
TO-263AC (SMPD)
K
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop
• ESD capability
• AEC-Q101 qualified
1
2
Top View
Bottom View
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SE20DX
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
General purpose, power line polarity protection, in both
consumer and automotive applications.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A (T
A
= 125 °C)
I
R
T
J
max.
Package
Diode variations
20 A
100 V, 200 V, 400 V, 600 V
150 A
1.03 V
25 μA
175 °C
TO-263AC (SMPD)
Single
MECHANICAL DATA
Case:
TO-263AC (SMPD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity:
As marked
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature range
Notes
(1)
With heatsink
(2)
Free air, mounted on recommended copper pad area
SYMBOL
V
RRM
I
F (1)
I
F (2)
I
FSM
T
J
, T
STG
SE20DB
100
SE20DD
200
20
3.9
150
-55 to +175
SE20DG
400
SE20DJ
600
UNIT
V
A
A
°C
Revision: 13-Jan-16
Document Number: 87794
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SE20DB, SE20DD, SE20DG, SE20DJ
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
I
F
= 10 A
Instantaneous forward voltage
I
F
= 20 A
I
F
= 10 A
I
F
= 20 A
Reverse current
Typical reverse recovery time
Typical junction capacitance
Rated V
R
TEST CONDITIONS
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
t
rr
C
J
SYMBOL
TYP.
0.98
1.10
0.88
1.03
-
38
3000
150
MAX.
-
1.20
-
1.15
25
150
-
-
μA
ns
pF
V
UNIT
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
4.0 V, 1 MHz
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °c unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)(2)
R
JC
(3)
SE20DB
SE20DD
60
1.6
SE20DG
SE20DJ
UNIT
°C/W
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
(2)
Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R
JA
- junction to ambient
(3)
With infinite heatsink
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(T
A
= 25 °C unless otherwise noted)
STANDARD
AEC-Q101-001
TEST TYPE
Human body model (contact mode)
TEST CONDITIONS
C = 100 pF, R = 1.5 k
SYMBOL
V
C
CLASS
H3B
VALUE
> 8 kV
ORDERING INFORMATION
(Example)
STANDARD
TO-263AC (SMPD)
TO-263AC (SMPD)
Note
(1)
AEC-Q101 qualified
PREFERRED P/N
SE20DJ-M3/I
SE20DJHM3/I
(1)
UNIT WEIGHT
(g)
0.54
0.54
PREFERRED PACKAGE
CODE
I
I
BASE
QUANTITY
2000/reel
2000/reel
DELIVERY MODE
13" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 13-Jan-16
Document Number: 87794
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SE20DB, SE20DD, SE20DG, SE20DJ
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
C
unless otherwise noted)
22
20
18
16
14
12
10
8
6
4
2
0
0
25
50
75
100
125
150
175
Free air, T
A,
Rth
JA
= 60
o
C/W
1000
T
A
=
175
°C
100
T
A
= 150 °C
Average Forward Rectified Current (A)
Rth
JC
= 1.6
o
C/W
Instantaneous Reverse Current (μA)
T
A
= 125 °C
10
T
A
= 75 °C
1
T
A
= 25 °C
0.1
0.01
10
20
30
40
50
60
70
80
90
100
CaseTemperature (
°C)
Fig. 1 - Forward Current Derating Curve
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
1000
D = 0.5
D = 0.3
D = 0.2
D = 0.8
D = 1.0
Junction Capacitance (pF)
Average Power Loss (W)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
100
D = 0.1
T
D = t
p
/T
t
p
10
1
2
3
4
5
6
7
8
9 10 11 12 13 14
0.1
1
10
100
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Transient Thermal Impedance (°C/W)
100
100
Junction to Ambient
Instantaneous Forward Current (A)
10
T
A
= 175 °C
T
A
= 150 °C
1
T
A
= 125 °C
10
T
A
= 75 °C
0.1
T
A
= 25 °C
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 13-Jan-16
Document Number: 87794
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SE20DB, SE20DD, SE20DG, SE20DJ
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Vishay General Semiconductor
TO-263AC (SMPD)
Mounting Pad Layout
Revision: 13-Jan-16
Document Number: 87794
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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参数对比
与SE20DJHM3/I相近的元器件有:SE20DD-M3/I、SE20DGHM3/I。描述及对比如下:
型号 SE20DJHM3/I SE20DD-M3/I SE20DGHM3/I
描述 Rectifiers 20A 600V AEC-Q101 ESD Rectifr DIODE GEN PURP 200V 3.9A TO263AC DIODE GEN PURP 400V 3.9A TO263AC
二极管类型 - 标准 标准
电压 - DC 反向(Vr)(最大值) - 200V 400V
电流 - 平均整流(Io) - 3.9A 3.9A
不同 If 时的电压 - 正向(Vf - 1.2V @ 20A 1.2V @ 20A
速度 - 标准恢复 >500ns,> 200mA(Io) 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr) - 3µs 3µs
不同 Vr 时的电流 - 反向漏电流 - 25µA @ 200V 25µA @ 400V
不同 Vr,F 时的电容 - 150pF @ 4V,1MHz 150pF @ 4V,1MHz
安装类型 - 表面贴装 表面贴装
封装/外壳 - TO-263-3,D²Pak(2 引线 + 凸片)变型 TO-263-3,D²Pak(2 引线 + 凸片)变型
供应商器件封装 - TO-263AC(SMPD) TO-263AC(SMPD)
工作温度 - 结 - -55°C ~ 175°C -55°C ~ 175°C
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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