PF775-04
SED1230 Series
SED1230 Series
Dot Matrix LCD Controller Driver
SSC5000Series
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12 Character
×
4 Line (5
×
7 dot)
q
Built-in Character Generator ROM and RAM
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Built-in Power Supply Circuit for LCD
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DESCRIPTION
The SED1230 Series is a dot matrix LCD controller driver for character display, and can display a maximum of 48
characters, 4 user-defined characters, and a maximum of 64 symbols by means of 4-bit, 8-bit or serial data sent
from a microcomputer.
A built-in character generator ROM is prepared for 256 character types, and each character font consists of 5
×
7
dots. A user-defined character RAM for four characters of 5
×
7 dots are incorporated, and a symbol register is also
incorporated. With these, it is possible to apply this Series to display with a high degree of freedom. This Series
can operate handy units with a minimum power consumption by means of its low power consumption and standby
mode.
The SED1230 Series are classified into SED1230, SED1231, SED1232, and SED1233 depending on the duty of
use and the number of display columns.
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FEATURES
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Built-in display RAM
48 characters + 4 user-defined characters + 64 symbols
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CGROM (for up to 256 characters), CGRAM (4 characters), and symbol register (64 symbols)
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Number of display columns
×
number of lines
(12 columns + 1 column for signal)
×
4 lines + 52 symbols: SED1230
(12 columns + 1 column for signal)
×
3 lines + 52 symbols: SED1231
(12 columns + 1 column for signal)
×
2 lines + 52 symbols: SED1232
16 columns
×
2 lines + 64 symbols:
SED1233
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CR oscillating circuit (incorporating C and R)
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High-speed MPU interface
Interfacing with both 68 series and 80 series MPU
Interfacing in 4 bits/8 bits
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Serial interface
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Character font
5
×
7 dots
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Duty ratio
1/16 (SED1232, SED1233)
1/23 (SED1231)
1/30 (SED1230)
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Simple command setting
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Built-in liquid crystal driving power circuit
Voltage boosting circuit, voltage regulating circuit, voltage follower
×
4
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Built-in electronic volume function
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Low power consumption
100
µA
Max. (In normal operation mode:
Including the operating current of the built-in power supply)
20
µA
Max. (In standby display mode)
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Power supply
V
DD
- V
SS
(logic section):
–2.4 V to –3.6 V
V
DD
- V
5
(liquid crystal drive section): –5.0 V to –11.0 V (In the case of external power supply)
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Wide operating temperature range
Ta = -30 to 85°C
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CMOS process
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Package:
Die form SED123 D
B
, SED123 D
E
(Au bump)
SED123 D
A
, SED123 D
C
(Al pad)
TCP
SED123 T
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This IC is not designed with a protection against radioactive rays.
*
*
*
*
**
*
*
*
*
*
1
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BLOCK DIAGRAM
SED1230 Series
2
D0
D1
D2
Input buffer
Address counter
RAM
Refresh address counter
Timing generating circuit
Oscillator
V
S1
D3
D4
D5
D6 (SCL)
D7 (SI)
CGROM
Power circuit
CAP1+
CAP1–
CAP2+
CAP2–
VR
IF
RES
MPU interface
Cursor control
CS
WR
(E)
P/S
A0
Command
decoder
V
OUT
SEG driving circuit
COM driving circuit
SEG1–60
SEG1–6
COM1–28
COMS1–3
V
1
V
2
V
3
V
4
V
5
SED1230 Series
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PAD SPECIFICATION
173
174
86
85
(0,0)
193
69
1
58
SED1230D**
SED1231D**
SED1232D**
SED1233D**
1/30 duty
1/23 duty
1/16 duty
1/16 duty
12 columns + 1 signal column
12 columns + 1 signal column
12 columns + 1 signal column
16 columns
#1 Column for CGROM pattern change
Chip size:
Pad pitch:
Chip thickness:
10.23
×
3.11 mm
110
µm
(Min.)
625
±
25
µm
(SED123 D
525
±
25
µm
(SED123 D
↑
1) A1 pad specification (SED123 D
A
)
Pad size: A 86
µm ×
135
µm
B 135
µm ×
86
µm
2) Au bump specification (SED123 D
B
)
For reference:
Bump sizeA 80
µm ×
129
µm
B 129
µm ×
80
µm
Bump height 22.5
µm ±
5.5
µm
*
*
*
**
*
*
*
A
,, SED123
*
D
*
B
))
*
C
SED123
*
D
*
E
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ABSOLUTE MAXIMUM RATINGS
Rating
Power supply voltage (1)
Power supply voltage (2)
Power supply voltage (3)
Input voltage
Output voltage
Operating temperature
Storage temperature
TCP
Bare chip
Symbol
V
SS
V
5
V
1
, V
2
, V
3
, V
4
V
IN
V
O
T
opr
T
str
Value
–6.0 to +0.3
–16.0 to +0.3
V
5
to +0.3
V
SS
–0.3 to +0.3
V
SS
–0.3 to +0.3
–30 to +85
–55 to +100
–75 to +125
Unit
V
V
V
V
V
°C
°C
(V
CC
) V
DD
(GND) V
SS
V
DD
V
5
Notes: 1. All the voltage values are based on V
DD
= 0 V.
2. For voltages of V
1
, V
2
, V
3
and V
4
, keep the condition of V
DD
≥
V
1
≥
V
2
≥
V
3
≥
V
4
≥
V
5
at all times.
3. If the LSI is used exceeding the absolute maximum ratings, it may lead to permanent destruction.
In ordinary operation, it is desirable to use the LSI in the condition of electrical characteristics. If the LSI
is used out of this condition, it may cause a malfunction of the LSI and have a bad effect on the reliability
of the LSI.
3
SED1230 Series
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DC CHARACTERISTICS
(V
DD
= 0 V, V
SS
= –3.6 V to –2.4 V, Ta = –30 to 85°C unless otherwise specified.)
Characteristic
Symbol
Condition
Power
Recommended
supply
operation
V
SS
voltage (1) Operable
Power
Recommended
supply
operation
V
5
voltage (2) Operable
Operable
V
1
, V
2
Operable
V
3
, V
4
High-level input voltage
V
IHC
Low-level input voltage
V
ILC
Input leakage current
I
LI
V
IN
= V
DD
or V
SS
LC driver ON resistance
R
ON
Ta=25°C
V
5
=–7.0V
∆V=0.1V
Static current consumption
I
DDQ
Dynamic current
I
DD
Display State V
5
= –7 V without load
consumption
Standby state Oscillation ON,
Power OFF
Sleep state
Oscillation OFF,
Power OFF
Access state f
cyc
=200KHz
Input pin capacity
C
IN
Ta=25°C f=1MHz
Reset time
t
R
Reset pulse width
t
RW
Input voltage
V
SS
Booster output voltage V
OUT
Double boosting state
Triple boosting state
Voltage follower
V
5
operating voltage
Reference voltage
V
REG
Ta = 25°C
Min.
–3.6
–5.5
–11.0
–11.0
0.6×V
5
V
DD
0.2×V
SS
V
SS
–1.0
Typ.
–3.0
–3.0
Max.
–2.4
–2.0
–5.0
–4.5
V
DD
0.8×V
5
V
DD
0.8×V
SS
1.0
40
5.0
100
20
5
500
8.0
Unit
V
Applicable pin
V
SS
*1
V
5
*2
V
1
, V
2
V
3
, V
4
*3
*3
*3
COM,SEG
*4
V
DD
V
DD
*5
V
DD
*6
V
DD
V
DD
*7
*3
*8
*9
*10
V
OUT
V
20
0.1
V
V
V
V
µA
KΩ
µA
µA
µA
µA
µA
pF
µs
µs
V
V
V
V
5.0
1.0
10
–3.6
–7.2
–10.8
–11.0
–3.5
–3.1
Built-in power supply
–2.4
–4.5
–2.7
*1: A wide operating voltage range is guaranteed but an abrupt voltage variation in the access status of the MPU is not
guaranteed.
*2: The operating voltage range is applicable to the case where an external power supply is used.
*3: D0 - D5, D6 (SCL), D7 (SI), A0, RES, CS WR (E), P/S, IF
*4: This is a resistance value when a voltage of 0.1 V is applied between output pin SEGn, SEGSn, COMn or COMSn, and each
power pin (V
1
, V
2
, V
3
or V
4
). It is specified in the range of operating voltage (2).
RON = 0.1 V /
∆I
(∆I: Current flowing when 0.1 V is applied between the power and output)
*5: Character “
*6:
*7:
*8:
*9:
*10:
” display. This is applicable to the case where no access is made from the MPU and the built-in power circuit
and oscillating circuit are in operation.
This is applicable to the case where the built-in power circuit is OFF and the oscillating circuit is in operation in the standby
mode.
Current consumption when data is always written by fcyc.
The current consumption in the access state is almost proportional to the access frequency (fcyc).
When no access is made, only IDD (I) occurs.
t
R
(reset time) indicates the internal circuit reset completion time from the edge of the RES signal. Accordingly, the SED123
usually enters the operating state after
t
R
.
The minimum pulse width of the RES signal is specified.
To cause a reset operation, it is necessary to input a pulse width exceeding t
RW
.
When operating the boosting circuit, the power supply V
SS
must be used within the input voltage range.
*
4
SED1230 Series
s
CHARACTOR FONT (JIS TYPE STANDARD)
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SED123 D
A
*
*
0
1
2
3
4
5
6
0
Lower 4 Bit of Code
7
8
9
A
B
C
D
E
F
1
2
3
4
5
6
Higher 4 Bit of Cord
7
8
9
A
B
C
D
E
F
5
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