SEMiX 151GD128Ds
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMIX
®
13s
SPT IGBT Modules
SEMiX 151GD128Ds
Inverse diode
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Preliminary Data
Features
Typical Applications
Inverse diode
Thermal characteristics
Temperature sensor
Mechanical data
GD
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20-01-2006 GES
© by SEMIKRON
SEMiX 151GD128Ds
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
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20-01-2006 GES
© by SEMIKRON
SEMiX 151GD128Ds
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
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20-01-2006 GES
© by SEMIKRON
SEMiX 151GD128Ds
Fig. 13 Typ. CAL diode recovered charge
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
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20-01-2006 GES
© by SEMIKRON
