WILLAS
ESD Protection Diodes with Ultra−Low Capacitance
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FM120-M
SESD9L5.0T5
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High
is designed to protect voltage sensitive components that
The ESD9L
current capability, low forward voltage drop.
require
•
ultra−low capacitance from ESD and transient voltage events.
High surge capability.
Excellent
Guardring for overvoltage protection.
•
clamping capability, low capacitance, low leakage, and fast
response
Ultra high-speed switching.
•
time, make these parts ideal for ESD protection on designs
where board space is at a
planar chip,
Because of its low capacitance, it is
•
Silicon epitaxial
premium.
metal silicon junction.
suited for
Lead-free parts meet environmental standards
2.0 high speed and
•
use in high frequency designs such as USB
of
MIL-STD-19500
antenna line applications.
/228
RoHS product for packing code suffix "G"
•
Specification Features:
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
2
0.071(1.8)
0.056(1.4)
•
Ultra
Mechanical data
Low Capacitance 0.5 pF
Clamping Voltage
•
Low
•
Epoxy : UL94-V0 rated flame retardant
•
Small Body
:
Outline Dimensions:
•
Case Molded plastic, SOD-123H
•
•
•
•
•
•
•
1
SOD-923
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
Ratings at 25℃ ambient temperature unless otherwise specified.
RoHS product for packing code suffix ”G”
Single phase half wave, 60Hz, resistive of inductive load.
Halogen free product
current by 20%
For capacitive load, derate
for packing code suffix “H”
Pb-Free package is available
0.039″ x 0.024″ (1.00 mm x 0.60 mm)
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Low Body Height: 0.016″ (0.4 mm)
Method 2026
Stand−off Voltage: 5 V
1
2
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
Low Leakage
PIN 1. CATHODE
•
Mounting Position : Any
2. ANODE
Response Time is Typically < 1.0 ns
•
Weight : Approximated
Protection
IEC61000−4−2 Level 4 ESD
0.011 gram
This is a Pb−Free Device
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ordering information
Marking
D
Device
SESD9L5.0T5
0.031(0.8) Typ.
Shipping
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH
RATINGS
Mechanical Characteristics:
Marking
Void-free, transfer-molded, thermosetting plastic
12
CASE:
Code
13
14
15
16
8000/Tape&Reel
FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
Maximum Recurrent
94 V−0
Epoxy Meets UL
Peak Reverse Voltage
LEAD FINISH:
100% Matte Sn (Tin)
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
I
O
20
14
30
21
40
50
60
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
28
40
35
50
42
60
1.0
30
V
QUALIFIED MAX REFLOW TEMPERATURE:
260°C
Maximum Average Forward Rectified Current
20
30
V
Device Meets MSL 1 Requirements
superimposed on rated load (JEDEC method)
A
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
MAXIMUM RATINGS
Rating
R
ΘJA
Symbol
C
J
T
J
TSTG
Value
±10
±15
150
Unit
-55
kV
+125
to
40
120
-55 to +150
℃
IEC 61000−4−2 (ESD)
Operating Temperature Range
Storage Temperature Range
Contact
Air
°P
D
°
T
stg
-
65
to +175
Total Power Dissipation on FR−5 Board
= 25°C
(Note 1) @ T
A
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Storage Temperature Range
mW
°C
0.50
°C
°C
0.70
0.5
10
0.85
0.9
0.92
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
−55
to +150
I
R
−55
to +125
260
V
Maximum Average Reverse Current at @T A=25℃
T
J
Junction Temperature Range
@T
Rated DC Blocking Voltage
−
Maximum
A=125℃
Lead Solder Temperature
T
NOTES:
m
L
(10 Second Duration)
m
5(Max)
A
I
PP
Peak Pulse
MHZ and
1- Measured at 1
Current
applied reverse voltage of 4.0 VDC.
8 x 20 sec.
2- Thermal Resistance From Junction to Ambient
Peak Power Dissipation
P
pk
50(Max)
W
8 x 20
m
sec.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
ESD Protection Diodes with Ultra−Low Capacitance
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
(T
A
= 25°C unless otherwise noted)
•
Batch process design, excellent power dissipation offers
FM120-M
SESD9L5.0T5
THRU
FM1200-M
Pb Free Product
I
SOD-123H
PACKAGE
ELECTRICAL CHARACTERISTICS
Features
Package outline
I
F
better reverse leakage current and thermal resistance.
Symbol
Parameter
•
Low profile surface mounted application in order to
I
PP
optimize board space.
Peak Pulse Current
Maximum Reverse
power loss, high efficiency.
•
V
C
Low
Clamping Voltage @ I
PP
•
High current capability, low forward voltage drop.
V
RWM
surge capability.
•
High
Working Peak Reverse Voltage
I
R
•
Guardring for overvoltage protection.
@ V
RWM
Maximum Reverse Leakage Current
high-speed switching.
•
Ultra
Breakdown Voltage @ I
V
BR
T
•
Silicon epitaxial planar chip, metal silicon junction.
I
T
•
Lead-free parts meet environmental standards of
Test Current
I
F
MIL-STD-19500 /228
Forward Current
•
RoHS product for packing code suffix "G"
V
F
Halogen free product for
I
F
Forward Voltage @
packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
V
C
V
BR
V
RWM
I
R
V
F
I
T
V
0.071(1.8)
0.056(1.4)
I
PP
Mechanical
Dissipation
P
pk
Peak Power
data
C
•
Epoxy : UL94-V0
@ V
R
= 0 and
retardant
Capacitance
rated flame
f = 1.0 MHz
*See
•
Case : Molded
AND8308/D for detailed explanations of
Application Note
plastic, SOD-123H
datasheet parameters.
terminals, solderable per MIL-STD-750 ,
•
Terminals :Plated
Uni−Directional TVS
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 1.0 V Max. @ I
F
= 10 mA for all types)
RWM
R
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated
V
0.011 gram
I (mA)
(V)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Device
Ratings at 25℃ ambient temperature unless otherwise specified.
Max
Max
Min
Marking
Device
Single phase half wave, 60Hz, resistive of inductive load.
SESD9L5.0T5
D
5.0
1.0
5.4
For capacitive load, derate current by 20%
mA
1.0
Typ
0.5
Max
0.9
@ V
RWM
V
BR
(V) @ I
T
(Note 2)
I
T
C (pF)
V
C
(V)
@ I
PP
= 1 A
(Note 3)
Max
9.8
V
C
Per IEC61000−4−2
(Note 4)
Figures 1 and 2
See Below
SYMBOL
FM120-M
2. V
BR
is measured
RATINGS
test current I
T
at an ambient temperature of 25°C.
with a pulse
Marking Code
3. Surge current waveform per Figure 5.
12
13
14
4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
20
30
40
Maximum Recurrent Peak Reverse Voltage
V
RRM
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
14
20
21
30
28
40
V
V
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
V
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
ESD Protection Diodes with Ultra−Low Capacitance
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
PACKAGE
FM120-M
SESD9L5.0T5
THRU
FM1200-M
Pb Free Product
Features
IEC 61000−4−2 Spec.
Package outline
IEC61000−4−2 Waveform
I
peak
100%
90%
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
•
Batch process design, excellent power dissipation offers
First Peak
better
Test
reverse leakage current and thermal resistance.
Current
profile
application
Current at
•
Low
Voltage
surface mounted
Current at
in order to
30 ns (A)
60 ns (A)
(kV)
(A)
Level
optimize board space.
1
•
Low power loss, high efficiency.
4
2
7.5
2
•
High current capability, low forward voltage drop.
2
•
High surge capability.
4
15
8
4
3
•
Guardring for overvoltage protection.
6
22.5
12
6
•
Ultra high-speed switching.
4
8
30
16
8
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
•
Halogen free product for packing code suffix "H"
SOD-123H
I @ 30 ns
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
0.040(1.0)
0.024(0.6)
0.071(1.8)
0.056(1.4)
Mechanical data
Figure 3. IEC61000−4−2 Spec
•
Epoxy : UL94-V0 rated flame retardant
Oscilloscope
ESD Gun
•
Case : Molded plastic, SOD-123H
TVS
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
50
W
•
Mounting Position : Any
Cable
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
50
W
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Figure 4. Diagram of ESD Test Setup
Maximum RMS Voltage
The following is taken from Application Note
Marking Code
12
AND8308/D
−
Interpretation of Datasheet Parameters
20
Maximum Recurrent Peak Reverse Voltage
V
RRM
for ESD Devices.
V
RMS
V
DC
14
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
systems
14
such as
15
phones or laptop computers it
115
not
120
cell
16
is
13
18
10
clearly defined in the spec how to specify a clamping voltage
200
30
40
50
60
80
100
150
140
V
Maximum DC Blocking Voltage
ESD Voltage Clamping
20
For
Average Forward
elements it is
Maximum
sensitive circuit
Rectified Current
important
I
to limit the
O
voltage that an IC will be exposed to during an ESD event
Peak
as low a voltage as
8.3 ms single
The
sine-wave
to
Forward Surge Current
possible.
half
ESD clamping voltage
I
FSM
superimposed on rated load (JEDEC method)
protection diode during
is the voltage drop across the ESD
Typical Thermal Resistance
IEC61000−4−2 waveform. Since the
R
ΘJA
an ESD event per the
(Note 2)
Typical Junction Capacitance (Note 1)
a pass/fail spec
J
for larger
C
IEC61000−4−2 was written as
Operating Temperature Range
Storage Temperature Range
100
% OF PEAK PULSE CURRENT
90
80
70
T
J
at
a way
21
the device level. ON Semiconductor has developed
105
28
35
42
56
70
to examine the entire voltage waveform across the ESD
30
40
50
60
80
100
150
protection diode over the time domain of an ESD pulse in the
1.0
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
30
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
40
AND8307/D.
120
-55 to +125
-55 to +150
-
65
to +175
V
200
V
A
A
℃
Maximum Forward Voltage at 1.0A DC
t
r
TSTG
PEAK VALUE I
RSM
@ 8
ms
CHARACTERISTICS
P
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
I
R
Maximum Average Reverse Current at @T A=25℃
60
@T A=125℃
Rated DC Blocking Voltage
PULSE WIDTH (t ) IS DEFINED
AS THAT POINT WHERE THE
0.50
0.70
PEAK CURRENT DECAY = 8
ms
0.85
0.5
10
0.9
0.92
V
50
40
30
20
10
0
HALF VALUE I
RSM
/2 @ 20
ms
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
t
P
0
20
40
t, TIME (ms)
60
80
Figure 5. 8 X 20
ms
Pulse Waveform
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
ESD Protection Diodes with Ultra−Low
RECTIFIERS -20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
Capacitance
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
.030(0.75)
•
RoHS product for packing code suffix "G"
.033(0.85)
Halogen free product for packing code suffix "H"
FM120-M
SESD9L5.0T5
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
SOD−923
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
.006(0.15)
.010(0.25)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
.022(0.55)
.026(0.65)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of
.017(0.43)
inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.013(0.34)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
V
RRM
V
RMS
V
DC
I
O
I
FSM
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
.003(0.07)
.007(0.17)
16
60
42
1.0
30
40
120
60
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Vo
Vo
Vo
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
.037(0.95)
.041(1.05)
A
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
R
ΘJA
Dimensions in inches and (millimeters)
C
J
T
J
TSTG
-55 to +150
℃
P
-55 to +125
-
65
to +175
℃
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Vo
SOLDERING FOOTPRINT*
I
R
0.90
0.40
mA
NOTES:
2- Thermal Resistance From Junction to Ambient
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.30
DIMENSIONS: MILLIMETERS
2012-06
2012-09
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
