DATA SHEET
SEMICONDUCTOR
VOLTAGE RANGE
50 to 600 Volts
10.0 Amperes
FEATURES
•
Low forward voltage drop
•
High current capability
•
High reliability
•
High surge current capability
•
Good for switching mode application
•
High temperature soldering : 260
O
C / 10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
.177(4.5)
.MAX
.50(12.7)
MAX
.038(0.96)
.019(.5)
PIN1
2
3
.114(2.9)
.098(2.5)
.269(6.85)
.226(5.75)
.624(15.87)
.548(13.93)
.419(10.66)
MAX
SF1001~SF1007
TO-220AC
Unit:inch(mm)
.196(5.0)
.163(4.16)
DIA
.139(3.55)
.MIN
.054(1.39)
.045(1.15)
MECHANICAL DATA
•
Case: Molded plastic
•
Epoxy: UL 94V-0 rate flame retardant
Lead: Lead solderable per MIL-STD-202,
method 208 guranteed
•
Polarity: As Marked
•
Mounting position: Any
•
Weight: 2.24 grams
.100(2.54)
.025(0.65)
MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25•
•
ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse V oltage
Maximum RMS Voltage
Maxi mum DC Blocki ng Voltage
Maximum Average Forward Rect if ied Current
.375"(9.5mm) Lead Length at Tc=100
°C
Peak Forward Surge Current , 8.3 ms single half
sine- wave
super imposed on rated load (J EDEC method)
Maximum Instantaneous Forward Voltage a t 10.0A
Maxi mum DC Reverse Cur rent Tc=25
°C
at Rated DC B locking Voltage Tc=100
°C
Maximum Reverse Recovery Time (Note 1)
Typi cal Junction Capacitance (Note 2)
Oper ating and Storage Temperature Range TJ, TSTG
NOTES:
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
35
50
-55 +150
0.95
10
500
50
1.30
1.70
V
uA
uA
nS
pF
°C
150
A
SF1001
50
35
50
SF1002
100
70
100
SF1003
150
105
150
SF1004
200
140
200
10.0
SF1005
300
210
300
SF1006
400
280
400
SF1007
600
420
600
UNITS
V
V
V
A
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1
REV.02 20110725
RATINGS AND CHARACTERISTIC CURVES
SF1001~SF1007
.
RATING AND CHARACTERISTIC CURVES
AV E R A G E F O R WA R D C U R R E N T,
AMPERES
8
6
4
2
0
LEADLENGHTS
RESISTIVEORINDUCTIVE LOAD
PEAK FORWARD SURGE CURRENT,
10
150
125
100
75
50
25
0
8.3ms Single
Half Since-Wave
JEDEC Method
0
20
40
60
80
100
O
120
140
160
CASE TEMPERAURE, C
1
2
5
10
20
50
100
NO. OF CYCLE AT 60HZ
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
1000
40
I N S T N TA N E O U S F O R WA R D C U R R E N T
AMPERES
I N V S TA N TA N E O U S R E V E R S E C U R R E N T,
MICROAMPERES
50-200V
10
300-400V
100
T
J
= 125 C
O
T
J
= 75 C
10
O
600V
1
1.0
T
J
= 25 C
O
T
J
=25
O
C
Pulse Width=200us
.1
0.1
20
40
60
80
100
120
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE ,VOLTS
PERCENT OF RATED PEAK INVERSE VOLTGE, VOLTS
Fig.3- TYPICAL REVERSE CHARACTERISTIC
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
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2
REV.02 20110725
PCB设计
