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SF13GR0G

Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
DO-41, 2 PIN
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
HIGH RELIABILITY, LOW POWER LOSS
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.95 V
JEDEC-95代码
DO-204AL
JESD-30 代码
O-PALF-W2
最大非重复峰值正向电流
30 A
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
最大重复峰值反向电压
150 V
最大反向恢复时间
0.035 µs
表面贴装
NO
端子形式
WIRE
端子位置
AXIAL
文档预览
SF11G thru SF18G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- High efficiency, low VF
- High current capability
- High reliability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Super Fast Rectifiers
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
0.35 g (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJL
R
θJA
T
J
T
STG
20
20
80
- 55 to +150
- 55 to +150
0.95
5
100
35
10
O
SF
11G
50
35
50
SF
12G
100
70
100
SF
13G
150
105
150
SF
14G
200
140
200
1
30
SF
15G
300
210
300
SF
16G
400
280
400
SF
17G
500
350
500
SF
18G
600
420
600
UNIT
V
V
V
A
A
1.3
1.7
V
μA
ns
pF
C/W
O
O
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1401007
Version: F14
SF11G thru SF18G
Taiwan Semiconductor
CREAT BY ART
ORDERING INFORMATION
PART NO.
PACKING CODE
A0
SF1xG
(Note 1)
A1
R0
R1
B0
Note 1: "x" defines voltage from 50V (SF11G) to 600V (SF18G)
Suffix "G"
GREEN COMPOUND
CODE
DO-41
DO-41
DO-41
DO-41
DO-41
3,000 / Ammo box (52mm taping)
3,000 / Ammo box (26mm taping)
5,000 / 13" Paper reel
5,000 / 13" Paper reel (Reverse)
1,000 / Bulk packing
PACKAGE
PACKING
EXAMPLE
PREFERRED P/N
SF18G A0
SF18G A0G
PART NO.
SF18G
SF18G
PACKING CODE
A0
A0
G
Green compound
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1- MAXIMUM AVERAGE FORWARD
CURRENT DERATING
AVERAGE FORWARD CURRENT (A)
FIG.2- TYPICAL REVERSE CHARACTERISTICS
1000
1.5
RESISTIVE OR
INDUCTIVE LOAD
INSTANTANEOUS REVERSE CURRENT (μA)
100
1.0
TJ=125℃
10
0.5
TJ=75℃
1
0.0
0
25
50
75
100
125
(
o
C)
150
175
TJ=25℃
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
AMBIENT TEMPERATURE
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT
(A)
INSTANTANEOUS FORWARD CURRENT (A)
35
30
25
20
15
10
5
0
1
10
NUMBER OF CYCLES AT 60 Hz
FIG. 4- TYPICAL FORWARD CHARACTERISTICS
100
Pulse Width=300μs
1% Duty Cycle
10
8.3ms Single Half Sine Wave
JEDEC Method
SF11G-SF14G
1
SF15G-SF16G
SF17G-SF18G
0.4
0.6
0.8
FORWARD VOLTAGE (V)
100
0.1
1
1.2
1.4
1.6
1.8
Document Number: DS_D1401007
Version: F14
SF11G thru SF18G
Taiwan Semiconductor
CREAT BY ART
FIG. 5- TYPICAL JUNCTION CAPACITANCE
70
JUNCTION CAPACITANCE (pF)
60
50
40
30
20
10
0
0.1
1
10
REVERSE VOLTAGE (V)
100
1000
f=1.0MHz
Vsig=50mVp-p
SF11G-SF14G
SF15G-SF18G
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
2.00
0.71
25.40
4.20
25.40
Max
2.70
0.86
-
5.20
-
Unit (inch)
Min
0.079
0.028
1.000
0.165
1.000
Max
0.106
0.034
-
0.205
-
DIM.
A
B
C
D
E
MARKING DIAGRAM
P/N =
G=
YWW =
F=
Specific Device Code
Green Compound
Date Code
Factory Code
Document Number: DS_D1401007
Version: F14
SF11G thru SF18G
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1401007
Version: F14
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