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SF17

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

器件类别:分立半导体    二极管   

厂商名称:FORMOSA

厂商官网:http://www.formosams.com/

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器件参数
参数名称
属性值
厂商名称
FORMOSA
包装说明
O-PALF-W2
Reach Compliance Code
unknow
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.5 V
JEDEC-95代码
DO-41
JESD-30 代码
O-PALF-W2
最大非重复峰值正向电流
30 A
元件数量
1
端子数量
2
最高工作温度
125 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
最大重复峰值反向电压
500 V
最大反向恢复时间
0.035 µs
表面贴装
NO
端子形式
WIRE
端子位置
AXIAL
文档预览
SF11
1.0 AMP SUPER FAST RECTIFIERS
THRU
SF17
VOLTAGE RANGE
50 to 600 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
1.0 Ampere
DO-41
.107(2.7)
.080(2.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.34 grams
.034(.9)
.028(.7)
DIA.
.205(5.2)
.166(4.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=55 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
SF11
50
35
50
SF12
100
70
100
SF13
150
105
150
SF14
200
140
200
1.0
30
SF15
300
210
300
SF16
400
280
400
SF17 UNITS
600
420
600
V
V
V
A
A
V
mA
mA
nS
pF
C
0.95
5.0
50
35
50
-65 +150
1.25
1.50
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
RATING AND CHARACTERISTIC CURVES (SF11 THRU SF17)
FIG.1- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
trr
+0.5A
|
|
|
|
|
|
|
|
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.375"(9.5mm) Lead Length
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE,( C)
FIG.3-TYPICAL FORWARD
CHARACTERISTICS
50
INSTANTANEOUS FORWARD CURRENT,(A)
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
50
3.0
SF
11~
SF
14
REVERSE LEAKAGE CURRENT, (mA)
10
10
3.0
1.0
Tj=100 C
1.0
SF
15
~S
F1
6
SF
17
0.1
Tj=25 C
Pulse Width 300us
1% Duty Cycle
Tj=25 C
0.1
.01
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
.01
0
20
40
60
80
100 120 140
FORWARD VOLT
AGE,(V)
PERCENT OF RATED PEAK REVERSE VOLT
AGE,(%)
FIG.5-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
50
FIG.6-TYPICAL JUNCTION CAPACITANCE
175
150
125
100
75
50
25
0
40
30
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
20
10
0
1
5
10
50
100
JUNCTION CAPACITANCE,(pF)
.01
.05
.1
.5
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,(V)
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参数对比
与SF17相近的元器件有:SF15、SF14、SF13、SF12、SF11、SF16。描述及对比如下:
型号 SF17 SF15 SF14 SF13 SF12 SF11 SF16
描述 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41
厂商名称 FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA
Reach Compliance Code unknow unknown unknow unknow unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.5 V 1.25 V 0.95 V 0.95 V 0.95 V 0.95 V 1.25 V
JEDEC-95代码 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
JESD-30 代码 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
最大非重复峰值正向电流 30 A 30 A 30 A 30 A 30 A 30 A 30 A
元件数量 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 1 A 1 A 1 A 1 A 1 A 1 A 1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
最大重复峰值反向电压 500 V 300 V 200 V 150 V 100 V 50 V 400 V
最大反向恢复时间 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs
表面贴装 NO NO NO NO NO NO NO
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
包装说明 O-PALF-W2 O-PALF-W2 - O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
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