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SF19

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

器件类别:半导体    分立半导体   

厂商名称:BILIN

厂商官网:http://www.galaxycn.com/

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FEATURES
Low cost
GALAXY ELECTRICAL
SF17---SF19
VOLTAGE RANGE:
600
---
1000
V
CURRENT: 1.0A
SUPER FAST RECTIFIER
DO - 41
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load. For capacitive load,derate by 20%.
SF17
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=55
SF18
800
SF19
1000
UNITS
V
V
RRM
V
RMS
V
DC
I
F(AV)
600
420
600
560
800
1.0
700
1000
V
V
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.7
5.0
35
50
50
-
65
----- + 150
-
65
----- + 150
2.5
10.0
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
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2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0264028
BL
GALAXY ELECTRICAL
1
.
RATINGS AND CHARACTERISTIC CURVES
t
rr
50
N 1.
10
N 1.
SF17 --- SF19
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
+0.5A
0
PULSE
GENERATOR
(NOTE2)
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
D.U.T.
(+)
25VDC
(approx)
(-)
-0.25A
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE
TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD
100
40
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.04
0.02
0.01
0
0.5
1.0 1.5
2.0 2.5
3.0
3.5
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
2
Single Phase
Half Wave 60H
Z
Resistive or
Inductive Load
0.375"(9.5mm)Lead Length
z
CURRENT, AMPERES
T
J
=25
P u ls e W id th = 3 0 0
µ
s
SF18-SF19
SF17
1
0
0
25
50
75
100 125
150
175
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
AMBIENT TEMPERATURE,
FIG.5 -- PEAK FORWARD SURGE CURRENT
JUNCTION CAPACITANCE,pF
PEAK FORWARD SURGE
CURRENT, AMPERES
100
60
40
20
10
6
4
2
1 0.2
0.1
T
J
=25
f=1.0MH
Z
30
25
20
15
10
5
0
1
5
10
50
100
8.3ms Single Half
Sine-Wave
0.4
1
2
4
10
20 40
100
REVERSE VOLTAGE,VOLTS
FIG.6 -- TYPICAL REVERSE CHARACTERISTIC
CURRENT, MICROAMPERES
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS REVERSE
100
10
1
T
J
= 1 0 0
.1
T
J
= 2 5
.0 1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE,
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Document Number 0264028
BL
GALAXY ELECTRICAL
2.
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参数对比
与SF19相近的元器件有:SF17、SF18。描述及对比如下:
型号 SF19 SF17 SF18
描述 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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