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SF2005PTHC0G

DIODE GEN PURP 300V 20A TO247AD

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

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器件参数
参数名称
属性值
厂商名称
Taiwan Semiconductor
包装说明
TO-3P, 3 PIN
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
LOW POWER LOSS, UL RECOGNIZED
应用
EFFICIENCY
外壳连接
CATHODE
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.5 V
JEDEC-95代码
TO-247AD
JESD-30 代码
R-PSFM-T3
最大非重复峰值正向电流
180 A
元件数量
2
相数
1
端子数量
3
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
10 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
参考标准
AEC-Q101
最大重复峰值反向电压
300 V
最大反向电流
10 µA
最大反向恢复时间
0.035 µs
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
文档预览
SF2001PT - SF2008PT
Taiwan Semiconductor
CREAT BY ART
20A, 50V - 600V Glass Passivated Super Fast Rectifiers
FEATURES
- Dual rectifier construction, positive center-tap
- Glass passivated chip junctions
- Superfast recovery time, high voltage
- Low forward voltage, high current capability
- Low thermal resistance
- Low power loss, high efficiency
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
1
2
3
TO-247AD (TO-3P)
MECHANICAL DATA
Case:
TO-247AD (TO-3P)
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
1.13 Nm max.
Weight:
5.6g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
SF
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 10 A
I
F
= 20 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300
μs,
1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, recover to 0.25A.
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V DC.
T
J
=25°C
T
J
=125°C
SYMBOL 2001
PT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
50
35
50
SF
2002
PT
100
70
100
SF
2003
PT
150
105
150
SF
2004
PT
200
140
200
20
180
SF
2005
PT
300
210
300
SF
2006
PT
400
280
400
SF
2007
PT
500
350
500
SF
2008
PT
600
420
600
V
V
V
A
A
UNIT
V
F
0.975
1.100
10
400
35
175
2.5
- 55 to +150
- 55 to +150
1.3
1.5
1.7
1.9
V
I
R
t
rr
C
J
R
θJC
T
J
T
STG
μA
ns
pF
°C/W
°C
°C
Version: H1601
SF2001PT - SF2008PT
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
SF20xxPT
(Note 1)
*: Optional available
PART NO.
SUFFIX
H
PACKING
CODE
C0
PACKING CODE
SUFFIX
G
(*)
PACKAGE
TO-3P
PACKING
50 / Tube
Note 1: "xx" defines voltage from 50V (SF2001PT) to 600V (SF2008PT)
EXAMPLE
EXAMPLE P/N
SF2006PTHC0G
PART NO.
SF2006PT
PART NO.
SUFFIX
H
PACKING CODE
C0
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
25
1000
INSTANTANEOUS REVERSE CURRENT(μA)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
PER LEG
AVERAGE FORWARD CURRENT (A)
20
100
T
J
=100°C
10
T
J
=75°C
1
15
10
5
Resistive or
inductive load
with heat sink
T
J
=25°C
0
0
50
100
150
CASE TEMPERATURE (
°
C)
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
210
180
150
120
90
60
30
0
1
10
NUMBER OF CYCLES AT 60 Hz
FIG. 4 TYPICAL INSTANEOUS FORWARD
CHARACTERISTICS PER LEG
100
INSTANTANEOUS FORWARD CURRENT (A)
PEAK FORWARD SURGE CURRENT (A)
8.3ms single half sine wave
SF2001PT-SF2004PT
10
1
SF2005PT-SF2006PT
SF2007PT-SF2008PT
0.1
0
0.2
0.4
0.6
0.8
1
1.2
FORWARD VOLTAGE. (V)
1.4
1.6
1.8
100
Version: H1601
SF2001PT - SF2008PT
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG
1000
CAPACITANCE (pF)
100
10
0.1
f=1MHz
Vsig=50mVp-p
1
10
100
REVERSE VOLTAGE. (V)
PACKAGE OUTLINE DIMENSIONS
TO-247AD (TO-3P)
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Unit (mm)
Min
15.90
7.90
5.70
20.80
3.50
19.70
-
2.90
1.93
2.97
1.12
5.20
4.90
2.70
0.51
Max
16.40
8.20
6.20
21.30
4.10
20.20
4.30
3.40
2.18
3.22
1.22
5.70
5.16
3.00
0.76
Unit (inch)
Min
0.626
0.311
0.224
0.819
0.138
0.776
-
0.114
0.076
0.117
0.044
0.205
0.193
0.106
0.020
Max
0.646
0.323
0.244
0.839
0.161
0.795
0.169
0.134
0.086
0.127
0.048
0.224
0.203
0.118
0.030
MARKING DIAGRAM
P/N
G
YWW
F
= Marking Code
= Green Compound
= Date Code
= Factory Code
Version: H1601
SF2001PT - SF2008PT
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Version: H1601
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