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SF24G A0G

DIODE GEN PURP 200V 2A DO204AC

器件类别:半导体    分立半导体   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
二极管类型
标准
电压 - DC 反向(Vr)(最大值)
200V
电流 - 平均整流(Io)
2A
不同 If 时的电压 - 正向(Vf
950mV @ 2A
速度
快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr)
35ns
不同 Vr 时的电流 - 反向漏电流
5µA @ 200V
不同 Vr,F 时的电容
40pF @ 4V,1MHz
安装类型
通孔
封装/外壳
DO-204AC,DO-15,轴向
供应商器件封装
DO-204AC(DO-15)
工作温度 - 结
-55°C ~ 150°C
文档预览
SF21G thru SF28G
CREAT BY ART
FEATURES
- Glass passivated chip junction
- High efficiency, Low VF
- High current capability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Super Fast Rectifiers
MECHANICAL DATA
Case:
DO-204AC (DO-15)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight:
0.4g (approximately)
DO-204AC (DO-15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@2A
Maximum reverse current @ rated VR
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJC
R
θJA
T
J
T
STG
40
16
65
- 55 to +150
- 55 to +150
0.95
5
100
35
20
O
SF
21G
50
35
50
SF
22G
100
70
100
SF
23G
150
105
150
SF
24G
200
140
200
2
50
SF
25G
300
210
300
SF
26G
400
280
400
SF
27G
500
350
500
SF
28G
600
420
600
UNIT
V
V
V
A
A
1.3
1.7
V
μA
ns
pF
C/W
O
O
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300
μs,
1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
C
C
Document Number: DS_D1405017
Version: G14
SF21G thru SF28G
Taiwan Semiconductor
CREAT BY ART
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
SF2xG
(Note 1)
A0
Prefix "H"
R0
B0
Suffix "G"
PACKING CODE
GREEN COMPOUND
CODE
DO-15
DO-15
DO-15
1,500 / Ammo box
3,500 / 13" Paper reel
1,000 / Bulk packing
PACKAGE
PACKING
Note 1: "x" defines voltage from 50V (SF21G) to 600V (SF28G)
EXAMPLE
PREFERRED P/N
SF21G A0
SF21G A0G
SF21GHA0
PART NO.
SF21G
SF21G
SF21G
H
AEC-Q101
QUALIFIED
PACKING CODE
A0
A0
A0
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (
o
C)
INSTANTANEOUS REVERSE CURRENT
(μA)
FIG.1- MAXIMUM AVERAGE FORWARD
CURRENT DERATING
1000
FIG.2- TYPICAL REVERSE CHARACTERISTICS
AVERAGE FORWARD
A
CURRENT (A)
100
TJ=125℃
10
TJ=75℃
RESISTIVE OR
INDUCTIVE LOAD
1
TJ=25℃
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
PEAK FORWARD SURGE CURRENT
(A)
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
60
50
40
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3ms Single Half Sine
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT
(A)
SF21G-SF24G
SF25G-SF26G
10
SF27G-SF28G
1
Pulse
Width=300μs
1% Duty Cycle
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0.1
FORWARD VOLTAGE (V)
Document Number: DS_D1405017
Version: G14
SF21G thru SF28G
Taiwan Semiconductor
CREAT BY ART
FIG. 4- TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE (pF)
150
125
100
75
50
25
0
f=1.0MHz
Vsig=50mVp-p
SF21G-SF24G
SF25G-SF28G
0.1
1
10
100
REVERSE VOLTAGE (V)
1000
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
2.60
0.70
25.40
5.80
25.40
Max
3.60
0.90
-
7.60
-
Unit (inch)
Min
0.102
0.028
1.000
0.228
1.000
Max
0.142
0.035
-
0.299
-
DIM.
A
B
C
D
E
MARKING DIAGRAM
P/N =
G=
F=
Specific Device Code
Green Compound
Factory Code
YWW = Date Code
Document Number: DS_D1405017
Version: G14
SF21G thru SF28G
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1405017
Version: G14
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