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SF85G

8 A, SILICON, RECTIFIER DIODE, TO-220

器件类别:半导体    分立半导体   

厂商名称:FCI [First Components International]

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Description
Mechanical Dimensions
DIA
.154(3.91)
.148(3.74)
MAX.412(10.5)
.06(1.52)
.05(1.27)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
SF81G~86G
.16(4.06)
.14(3.56)
1
2
MAX.05(1.5)
.037(0.94)
.027(0.68)
1
.56(14.22)
.53(13.46)
.27(6.86)
.23(5.84)
PIN
.594(15.1)
.587(14.9)
.11(2.79)
.10(2.54)
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
TO-220AC
Features
¬
Fast switching for high efficiency
¬
Low forward voltage drop
¬
High current capability
¬
Low reverse leakage current
¬
High surge current capability
2
Dimensions in inches and (millimeters)
Mechanical Data
¬
Case: Molded plastic TO-220AC
¬
Epoxy: UL 94V-0 rate flame retardant
¬
Terminals: Solderable per MIL-STD-202
method 208
¬
Polarity:Color band denotes cathode
¬
Mounting position: Any
¬
Weight: 2.03 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL SF81G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
SF82G
100
70
100
SF83G
200
140
200
8.0
SF84G
300
210
300
SF85G
400
280
400
SF86G
600
420
600
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
50
35
50
I
FSM
125
A
V
F
I
R
Trr
C
J
R
JC
T
J
, T
STG
0.95
10.0
250
35
65
2.2
-55 to + 150
1.3
1.5
V
uA
uA
nS
pF
o
50
CW
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
RATINGS AND CHARACTERISTIC CURVES SF81G THRU SF86G
FIG.1 - FORWARD CURRENT DERATING CURVE
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
50
100
o
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
125
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
100
75
50
25
60 Hz Resistive or
Inductive load
150
0
1
10
100
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
SF8A01-SF8A03
1.0
SF8A04-SF8A05
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
100
T
J
=125 C
o
10
T
J
=25 C
1
o
SF8A06
0.1
0.01
0.2
0.4
0.6
0.8
T
J
=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
1.0
1.2
1.4
1.6
o
0.1
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE, pF
T
J
= 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
o
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
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参数对比
与SF85G相近的元器件有:SF81G、SF82G、SF83G、SF84G、SF86G。描述及对比如下:
型号 SF85G SF81G SF82G SF83G SF84G SF86G
描述 8 A, SILICON, RECTIFIER DIODE, TO-220 8 A, SILICON, RECTIFIER DIODE, TO-220 8 A, SILICON, RECTIFIER DIODE, TO-220 8 A, SILICON, RECTIFIER DIODE, TO-220 8 A, SILICON, RECTIFIER DIODE, TO-220 8 A, SILICON, RECTIFIER DIODE, TO-220
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