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SFAF1006GC0

Rectifier Diode, 1 Phase, 1 Element, 10A, 400V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN

器件类别：分立半导体    二极管   

厂商名称：Taiwan Semiconductor

厂商官网：http://www.taiwansemi.com/

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
ITO-220AC, 3/2 PIN
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS, UL RECOGNIZED
应用
EFFICIENCY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.3 V
JEDEC-95代码
TO-220AC
JESD-30 代码
R-PSFM-T2
最大非重复峰值正向电流
150 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
10 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
最大重复峰值反向电压
400 V
最大反向电流
10 µA
最大反向恢复时间
0.035 µs
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
文档预览
SFAF1001G - SFAF1008G
10.0AMPS. Isolated Glass Passivated Super Fast Rectifiers
ITO-220AC
Features
UL Recognized File # E-326243
High efficiency, low VF.
High current capavility
High reliability
High surge current capability
Low power loss.
For use in low voltage, high frequency inverter,
free wheeling, and polarity protection
application
Green compound with suffix "G" on packing
code & prefix "G" on datecode.
Mechanical Data
Cases: ITO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
o
C/10 seconds
Weight: 1.70 grams
Ordering Information(example)
Part No.
SFAF1001G
Package
ITO-220AC
Packing
50 / TUBE
Packing code
C0
Packing code
(Green)
C0G
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage
@ 10 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
(Note 1)
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJC
T
J
T
STG
SFAF SFAF SFAF SFAF SFAF SFAF SFAF SFAF
1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G
50
100
150
200
300
400
500
600
35
50
70
100
105
150
140
200
10
150
0.975
10
400
35
170
4
- 55 to + 150
- 55 to + 150
140
1.3
1.7
210
300
280
400
350
500
420
600
Units
V
V
V
A
A
V
uA
uA
nS
pF
O
@ T
A
=25
℃
@ T
A
=100
℃
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
C/W
O
O
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:F13
RATINGS AND CHARACTERISTIC CURVES (SFAF1001G THRU SFAF1008G)
FIG.1- MAXIMUM FORWARD CURRENT
DERATING CURVE
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
1000
12
AVERAGE FORWARD
A
CURRENT (A)
10
8
6
4
2
0
0
RESISTIVE OR
INDUCTIVELOAD
WITH HEAT SINK
INSTANTANEOUS REVERSE CURRENT. (uA)
100
TA=100℃
TA=75℃
10
50
100
CASE TEMPERATURE (
o
C)
150
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT
(A)
250
1
TA=25℃
TA=25℃
200
150
100
50
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3ms Single Half Sine Wave
JEDEC Method
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 5- TYPICAL FORWARD CHARACTERISTICS
100
SFAF1001G-SFAF1004G
INSTANTANEOUS FORWARD CURRENT. (A)
FIG. 4- TYPICAL JUNCTION CAPACITANCE
300
250
CAPACITANCE (pF)
200
10
TA=25
o
C
SFAF1001G~SFAF1004G
150
100
50
1
SFAF1005G-SFAF1006G
SFAF1007G-SFAF1008G
TA=25
o
C
Pulse Width=300us
1% Duty Cycle
0.4
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE. (V)
1.6
1.8
SFAF1005G~SFAF1008G
0
1
10
100
1000
REVERSE VOLTAGE. (V)
0.1
Version:F13
Ordering information
Part No.
Package
BULK Packing
50 / TUBE
Packing code
C0
Packing code
(Green)
C0G
SFAF100xG
ITO-220AC
Note: "x" is Device Code from "1" thru "8".
Dimensions
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Unit(mm)
Min
4.30
2.50
2.30
0.46
6.30
9.60
3.00
-
0.95
0.50
2.40
14.80
-
-
12.60
4.95
Max
4.70
3.10
2.90
0.76
6.90
10.30
3.40
1.60
1.45
0.90
3.20
15.50
4.10
1.80
13.80
5.20
Unit(inch)
Min
0.169
0.098
0.091
0.018
0.248
0.378
0.118
-
0.037
0.020
0.094
0.583
-
-
0.496
0.195
Max
0.185
0.122
0.114
0.030
0.272
0.406
0.134
0.063
0.057
0.035
0.126
0.610
0.161
0.071
0.543
0.205
Marking Diagram
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Version:F13
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参数对比
与SFAF1006GC0相近的元器件有：AT49SN3208-90CI、SFAF1001GC0、SFAF1002GC0、SFAF1008GC0、SFAF1008GC0G、SFAF1006GC0G。描述及对比如下：
型号 SFAF1006GC0 AT49SN3208-90CI SFAF1001GC0 SFAF1002GC0 SFAF1008GC0 SFAF1008GC0G SFAF1006GC0G
描述 Rectifier Diode, 1 Phase, 1 Element, 10A, 400V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Flash Memory, Rectifier Diode, 1 Phase, 1 Element, 10A, 50V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, 1 Phase, 1 Element, 10A, 400V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN
是否Rohs认证 符合 不符合 符合 符合 符合 符合 符合
包装说明 ITO-220AC, 3/2 PIN , ITO-220AC, 3/2 PIN ITO-220AC, 3/2 PIN ITO-220AC, 3/2 PIN ITO-220AC, 3/2 PIN R-PSFM-T2
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
厂商名称 Taiwan Semiconductor - Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
其他特性 FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS, UL RECOGNIZED - FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS, UL RECOGNIZED FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS, UL RECOGNIZED FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS, UL RECOGNIZED FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS, UL RECOGNIZED FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS, UL RECOGNIZED
应用 EFFICIENCY - EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
外壳连接 ISOLATED - ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON - SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.3 V - 0.975 V 0.975 V 1.7 V 1.7 V 1.3 V
JEDEC-95代码 TO-220AC - TO-220AC TO-220AC TO-220AC TO-220AC TO-220AC
JESD-30 代码 R-PSFM-T2 - R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2
最大非重复峰值正向电流 150 A - 150 A 150 A 150 A 150 A 150 A
元件数量 1 - 1 1 1 1 1
相数 1 - 1 1 1 1 1
端子数量 2 - 2 2 2 2 2
最高工作温度 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C - -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 10 A - 10 A 10 A 10 A 10 A 10 A
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
最大重复峰值反向电压 400 V - 50 V 100 V 600 V 600 V 400 V
最大反向电流 10 µA - 10 µA 10 µA 10 µA 10 µA 10 µA
最大反向恢复时间 0.035 µs - 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs
表面贴装 NO - NO NO NO NO NO
端子形式 THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
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