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SFAS804G RN

整流器 8A, 200V, 35NS, SINGLE RECTIFIER ISOLATED

器件类别:半导体    分立半导体    二极管与整流器    整流器   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
厂商名称
Taiwan Semiconductor
产品种类
整流器
安装风格
SMD/SMT
封装 / 箱体
TO-263AB-2
Vr - 反向电压
200 V
If - 正向电流
8 A
类型
Fast Recovery Rectifiers
配置
Single
Vf - 正向电压
0.95 V
最大浪涌电流
125 A
Ir - 反向电流
10 uA
恢复时间
35 ns
最小工作温度
- 55 C
最大工作温度
+ 150 C
封装
Cut Tape
封装
Reel
高度
4.7 mm
长度
10.5 mm
工作温度范围
- 55 C to + 150 C
产品
Rectifiers
宽度
9.65 mm
工厂包装数量
800
单位重量
2.240 g
文档预览
SFAS801G - SFAS808G
Taiwan Semiconductor
CREAT BY ART
8A, 50V - 600V Surface Mount Super Fast Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- High efficiency, low VF
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
TO-263AB (D PAK)
MECHANICAL DATA
Case:
TO-263AB (D
2
PAK)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Weight:
1.33 g (approximately)
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage
I
F
= 8 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
T
J
=25°C
T
J
=100°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
80
2.2
- 55 to +150
- 55 to +150
0.95
10
400
35
60
SFAS SFAS SFAS SFAS SFAS SFAS SFAS SFAS
801G 802G 803G 804G 805G 806G 807G 808G
50
35
50
100
70
100
150
105
150
200
140
200
8
125
1.3
1.7
300
210
300
400
280
400
500
350
500
600
420
600
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Note 1: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1405074
Version: M15
SFAS801G - SFAS808G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
SFAS80xG
(Note 1)
*: Optional available
PART NO.
SUFFIX
H
RN
MN
PACKING CODE
PACKING CODE
SUFFIX
G
(*)
PACKAGE
PACKING
800 / 13" Paper reel
800 / 13" Plastic reel
D
2
PAK
Note 1: "x" defines voltage from 50V (SFAS801G) to 600V (SFAS808G)
EXAMPLE
PREFERRED P/N
SFAS801GHRNG
PART NO.
SFAS801G
PART NO.
SUFFIX
H
PACKING CODE
RN
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
10
AVERAGE FORWARD
A
CURRENT (A)
INSTANTANEOUS REVERSE CURRENT
(μA)
1000
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
8
6
4
2
0
0
25
50
75
100
125
150
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
100
10
T
J
=100°C
1
T
J
=25°C
0
20
40
60
80
100
120
140
0.1
CASE TEMPERATURE (
o
C)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
150
120
90
60
30
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
INSTANTANEOUS FORWARD CURRENT (A)
PEAK FORWARD SURGE CURRENT (A)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG. 5 TYPICAL FORWARD CHARACTERISTICS
100
SFAS801G-SFAS804G
8.3ms Single Half Sine Wave
10
1
SFAS805G-SFAS806G
SFAS807G-SFAS808G
Pulse Width=300μs
1% Duty Cycle
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
FORWARD VOLTAGE (V)
Document Number: DS_D1405074
Version: M15
SFAS801G - SFAS808G
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
90
CAPACITANCE (pF)
80
70
60
50
40
1
10
f=1.0MHz
Vsig=50mVp-p
SFAS801G-SFAS804G
SFAS805G-SFAS808G
100
1000
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
TO-263AB (D
2
PAK)
DIM.
A
B
C
D
E
F
G
H
I
J
K
Unit (mm)
Min
-
14.60
2.41
0.68
2.29
4.44
1.14
1.14
8.25
0.36
2.03
Max
10.5
15.88
2.67
0.94
2.79
4.70
1.40
1.40
9.25
0.53
2.79
Unit (inch)
Min
-
0.575
0.095
0.027
0.090
0.175
0.045
0.045
0.325
0.014
0.080
Max
0.413
0.625
0.105
0.037
0.110
0.185
0.055
0.055
0.364
0.021
0.110
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
F
G
Unit (mm)
10.8
8.3
1.1
3.5
16.9
9.5
2.5
Unit (inch)
0.425
0.327
0.043
0.138
0.665
0.374
0.098
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1405074
Version: M15
SFAS801G - SFAS808G
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1405074
Version: M15
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