SFL3200/39
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Features:
•
•
•
•
•
•
•
•
•
Rugged Construction
Low RDS(on) and high transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dv/dt performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed Package
TX, TXV and Space Level Screening Available
Logic Level
12A 150V .17Ω
N-Channel Power MOSFET
TO-39
Symbol
Value
Unit
Maximum Ratings
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Peak Drain Current TC = 25
°C
1/
Operating and Storage Temperature
Thermal Resistance Junction to Case
Total Device Dissipation @ TC = 25
°C
Total Device Dissipation @ TA = 25
°C
Package Outline: TO-39 (JEDEC)
PIN OUT:
PIN 1: Source
PIN 2: Gate
Pin 3: Drain
V
DS
V
GS
I
D
I
P
Top & Tstg
R
θJC
P
D
150
+16
9.3
35
-55 to 175
11.5
13
1.2
Volts
Volts
Amps
Amps
ºC
ºC/W
Watts
Note:
1/
Peak Drain Current Limited by Package Lead Wire
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0007A
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFL3200/39
Electrical Characteristics @ TJ = 25
º
C
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250
µΑ)
Drain to Source On State Resistance
(VGS=10 V, ID=5 A)
On State Drain Current
(VDS>ID(on) X RDS(on) Max, VGS=5V)
Gate Threshold Voltage
(VDS=VGS, ID=250µΑ)
Forward Transconductance
(VDS>ID(on) x Max, IDS=5A)
Zero Gate Voltage Drain Current
(VDS=max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
At rated VGS
VGS=10 Volts
80% rated VDS
ID=9A
VDD=50%
Rated VDS
RG=15Ω
ID=7.2A
Symbol
BV
DSS
R
DS(on)
I
D(on)
V
GS(th)
g
fs
I
DSS
Min
150
––
12
1
8.35
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
Typ
––
.16
––
––
6
––
––
––
––
––
––
––
2.4
45
38
36
––
160
8.1
775
140
70
Max
––
.17
––
2
––
25
250
100
-100
35
4.1
21
––
––
––
––
1.33
240
––
––
––
––
Units
Volts
Ω
A
V
mho
µA
I
GSS
Q
g
Q
gs
Q
gd
td(on)
nA
nC
tr
tf
td(off)
nsec
V
nsec
nC
pF
Diode Forward Voltage
(VGS=0 V, TJ=25ºC) IS=7.2A
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
TJ=150ºC
IF=7.2A
Di/dt=100A/µsec
VGS=0 Volts
VDS=25 Volts
F=1 MHz
V
SD
T
rr
Q
RR
C
iss
C
oss
C
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模拟电子
