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SFM11PL

1 A, 50 V, SILICON, SIGNAL DIODE

器件类别:半导体    分立半导体   

厂商名称:DIOTECH

厂商官网:http://www.kdiode.com/

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SFM11PL THRU SFM18PL
Reverse Voltage - 50 to 600 Volts
SURFACE MOUNT SUPER FAST RECTIFIER
Forward Current - 1.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
SOD-123FL
Cathode Band
Top View
0.1
1.9
2.8
0.15
0.1
0.10-0.30
1.4
0.6
0.25
MECHANICAL DATA
Case: SOD-123FL, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.017 grams
3.7
0.2
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
1.0
0.2
Characteristics
Maximum Recurrent Peak Reverse Voltage
Maximum RMSVoltage
Maximum DCBlocking Voltage
Maximum Average Forward
Rectified Current @T
A
=50°C
Peak Forward Surge Current,
8.3 ms Single Half Sine-Wave
Superimposed on Rated Load (
JEDEC M et hod
)
Maximum Instantaneous At 1.0A DC
Maximum DCReverse Current @T =25 C
A
At Rated DCBlocking Voltage @T
A
=100 C
Reverse Recovery Time (Note1)
Operating Temperature Range
Storage Temperature Range
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
Symbol
V RRM
V RM S
V DC
SFM11 SFM12 SFM13 SFM14 SFM15 SFM16 SFM17 SFM18
PL
PL
PL
PL
PL
PL
PL
PL
Unit
V
V
V
A
A
50
35
50
100
35
100
150
70
150
200
140
200
300
280
300
1.0
400
420
400
500
560
500
600
700
600
IF(AV)
IFSM
VF
IR
T
RR
TJ
TSTG
25
0.95
5.0
100
35
-55 to +150
-55 to +150
1.25
1.70
V
uA
nS
C
C
SFM11PL THRU SFM18PL
RATINGS AND CHARACTERISTIC CURVES
10
AVERAGE FORWARD CURRENT,(A)
SF
M1
4P
L
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
INSTANTANEOUS FORWARD CURRENT,(A)
L~
PL
~
SF
M
16
PL
SF
.1
T
J
=25 C
Pulse Width 300us
1% Duty Cycle
SF
M
17
P
L~
SF
1.0
SF
M1
1P
M
15
M
18
P
L
.01
AMBIENT TEMPERATURE ( C)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
.001
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
PEAK FORWARD SURGE CURRENT,(A)
25
FORWARD VOLT
AGE,(V)
20
FIG.1-TYPICAL FORWARD CHARACTERISTICS
15
T
J
=25 C
8.3ms Single Half
Sine Wave
JEDEC method
50
NONINDUCTIVE
10
NONINDUCTIVE
10
5
(+)
25Vdc
(approx.)
( )
1
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
1
5
10
50
100
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
JUNCTION CAPACITANCE,(pF)
70
60
50
40
30
20
10
0
trr
+0.5A
|
|
|
|
|
|
|
|
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
FIG.5-TYPICAL JUNCTION CAPACITANCE
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参数对比
与SFM11PL相近的元器件有:SFM12PL、SFM13PL、SFM15PL、SFM16PL、SFM17PL、SFM18PL。描述及对比如下:
型号 SFM11PL SFM12PL SFM13PL SFM15PL SFM16PL SFM17PL SFM18PL
描述 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 150 V, SILICON, SIGNAL DIODE 1 A, 300 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 500 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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