This circuit uses a darlington pair topology with resistive
feedback for broadband performance as well as stability
over its entire temperature range. Internally matched to
50 ohm impedance, the SGA-4586 requires only DC blocking
and bypass capacitors for external components.
Small Signal Gain vs. Frequency
Preliminary
SGA-4586
DC-4000 MHz Silicon Germanium HBT
Cascadeable Gain Block
30
25
dB
20
15
10
0
1
2
3
4
5
Product Features
DC-4000 MHz Operation
Single Voltage Supply
High Output Intercept: +29 dBm typ. at 850 MHz
Low Current Draw: 45mA at 3.6V typ.
Low Noise Figure: 1.7dB typ. at 850 MHz
Applications
Oscillator Amplifiers
PA for Low Power Applications
IF/ RF Buffer Amplifier
Drivers for CATV Amplifiers
U nits
Min.
Ty p.
16.5
13.7
12.7
28.6
27.7
26.3
24.1
18.6
17.0
4000
1.40:1
1.30:1
27.1
22.0
20.3
1.9
3.6
97
Max.
Frequency GHz
Sy mbol
Parameters: Test C onditions:
Z
0
= 50 Ohms, I
D
= 45 mA, T = 25
o
C
Output Power at 1dB C ompressi on
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
P
1dB
dB m
dB m
dB m
dB m
dB m
dB m
dB
dB
dB
MHz
IP
3
Thi rd Order Intercept Poi nt
Power out per tone = 0 dBm
S
21
Bandwi dth
S
11
S
22
S
12
NF
V
D
Rth,j-l
Small Si gnal Gai n
(D etermi ned by S
11
, S
22
Values)
Input VSWR
Output VSWR
Reverse Isolati on
Noi se Fi gure, Z
S
= 50 Ohms
D evi ce Voltage
Thermal Resi stance (juncti on - lead)
f = D C -4000 MHz
f = D C -4000 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 1950 MHz
-
-
dB
dB
dB
dB
V
o
C /W
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
Microdevices product for use in life-support devices and/or systems.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-101266 Rev B
Preliminary
Preliminary
SGA-4586 DC-4000 MHz 3.6V SiGe Amplifier
Absolute Maximum Ratings
Operation of this device above any one of these parameters
may cause permanent damage.
Bias Conditions should also satisfy the following expression:
I
D
V
D
(max) < (T
J
- T
OP
)/Rth, j-l
Parameter
Supply Current
Operating Temperature
M aximum Input Pow er
Storage Temperature Range
Operating Junction Temperature
Value
90
-40 to +85
+5
-40 to +150
+150
Unit
mA
C
dBm
C
C
Key parameters, at typical operating frequencies:
Parameter
500 MH z
Gai n
Noi se Fi gure
Output IP3
Output P1dB
Input Return Loss
Isolati on
850 MH z
Gai n
Noi se Fi gure
Output IP3
Output P1dB
Input Return Loss
Isolati on
1950 MH z
Gai n
Noi se Fi gure
Output IP3
Output P1dB
Input Return Loss
Isolati on
2400 MH z
Gai n
Noi se Fi gure
Output IP3
Output P1dB
Input Return Loss
Isolati on
Ty pical
25 C
o
Test C ondition
U nit
(I
D
= 45 mA, unless otherwise noted)
26.3
1.7
27.7
16.3
16.1
28.4
24.1
1.7
28.6
16.5
15.6
27.1
18.6
1.9
27.7
13.7
18.7
22.0
17.0
2.3
26.3
12.7
20.0
20.3
dB
dB Z
S
= 50 Ohms
dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm
dB m
dB
dB
dB
dB Z
S
= 50 Ohms
dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm
dB m
dB
dB
dB
dB Z
S
= 50 Ohms
dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm
dB m
dB
dB
dB
dB Z
S
= 50 Ohms
dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm
dB m
dB
dB
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101266 Rev B
Preliminary
Preliminary
SGA-4586 DC-4000 MHz 3.6V SiGe Amplifier
Pin #
1
Function
RF IN
D escription
D ev ice Schematic
RF i nput pi n. Thi s pi n requi res the use of an
external D C blocki ng capaci tor chosen for the
frequency of operati on.
GND
C onnecti on to ground. Use vi a holes for best
performance to reduce lead i nductance.
Place vi as as close to ground leads as
possi ble.
RF OUT/Vcc RF output and bi as pi n. Bi as should be
suppli ed to thi s pi n through an external seri es
resi stor and RF choke i nductor. Because D C
bi asi ng i s present on thi s pi n, a D C blocki ng
