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SGB20UFSMSS

0.06 A, SILICON, SIGNAL DIODE

器件类别:分立半导体    二极管   

厂商名称:SSDI

厂商官网:http://www.ssdi-power.com/

下载文档
器件参数
参数名称
属性值
厂商名称
SSDI
包装说明
HERMETIC SEALED, SMS, 2 PIN
针数
2
Reach Compliance Code
compli
ECCN代码
EAR99
其他特性
METALLURGICALLY BONDED
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
E-LELF-R2
元件数量
1
端子数量
2
最大输出电流
0.06 A
封装主体材料
GLASS
封装形状
ELLIPTICAL
封装形式
LONG FORM
认证状态
Not Qualified
最大反向恢复时间
0.06 µs
表面贴装
YES
端子形式
WRAP AROUND
端子位置
END
Base Number Matches
1
文档预览
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SGB10UFSMS
thru
SGB35UFSMS
60 mAMP
1000-3500 VOLTS
60 nsec
HIGH VOLTAGE
RECTIFIER
FEATURES:
Ultra Fast Recovery: 60 nsec Maximum
PIV to 3500 Volts
Hermetically Sealed
Void-Free Construction
Metallurgically Bonded
175°C Maximum Operating Temperature
Micro Miniature Package
TX, TXV, and Space Level Screening Available
2/
Designer’s Data Sheet
Part Number / Ordering Information
1/
SGB _ _ UF SMS __
2/
L
Screening
= None
⏐ ⏐
TX = TX Level
⏐ ⏐
TXV = TXV Level
⏐ ⏐
S = S Level
⏐ ⏐
L
Package
⏐ ⏐
SMS = Surface Mount Square Tab
L
Recovery Time
UF = Ultra Fast
Voltage
L
10 = 1000 V
15 = 1500 V
20 = 2000 V
25 = 2500 V
30 = 3000 V
35 = 3500 V
ELECTRICAL CHARACTERISTICS
Part
Number
Symbol
Units
Conditions
Volts
25°C
Peak
Inverse
Voltage
PIV
Average
Rectified
Current
I0
mA
100°C
25°C
Maximum
Reverse Current
IR@PIV
μA
100°C
Maximum
Forward
Voltage
VF
4/
Volts
25°C
Maximum
Surge
Current
(1 Cycle)
IFSM
Amps
25°C
Maximum
Reverse
Recovery
Time
tRR
7/
nsec
25°C
Maximum
Junction
Capacitance
CJ
pF
VR = 100V
fT = 1MHZ
°C/W
Typical
Thermal
Impedance
θ
JE
SGB10UFSMS
SGB15UFSMS
SGB20UFSMS
SGB25UFSMS
SGB30UFSMS
SGB35UFSMS
1000
1500
2000
2500
3000
3500
60
60
60
60
60
60
50
50
50
50
50
50
0.1
0.1
0.1
0.1
0.1
0.1
10
10
10
10
10
10
9.5
9.5
9.5
9.5
9.5
9.5
5
5
5
5
5
5
60
60
60
60
60
60
1.0
1.0
1.0
1.0
1.0
1.0
165
165
165
165
165
165
1/ For Ordering Information, Price, and Availability – Contact Factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Operating and testing over 10,000 V/inch may require encapsulation or immersion in a suitable dielectric material.
4/ I
F
= I
O
; Max. forward voltage measured with instantaneous forward pulse of 300µsec minimum.
5/ Max. lead temperature for soldering is 250°C, 3/8” from case for 5 sec maximum.
6/ Operating and storage temperature: -65°C to +175°C.
7/ Reverse Recovery Test Conditions: IF=50mA, IR=100mA, IRR=25mA, TA=25°C.
8/ Consult manufacturing for operating curves.
Surface Mount Square
Tab
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RV0005E
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SGB10UFSMS
thru
SGB35UFSMS
PACKAGE OUTLINE: Surface Mount Square Tab
B
A
DIM
A
B
C
DIMENSIONS
MIN
0.090”
0.150”
0.022”
0.002”
MAX
0.100”
0.210”
0.028”
––
A
D
C
D
Dimensions are prior to soldering.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RV0005E
DOC
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