d. Maximum under steady state conditions is 166 °C/W.
e. Package limited.
Document Number: 63302
S11-1388-Rev. A, 11-Jul-11
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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New Product
Si2342DS
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Symbol
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 5 V
V
DS
= 8 V, V
GS
= 0 V
V
DS
= 8 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
5
V, V
GS
= 4.5 V
V
GS
½4.5
V, I
D
= 7.2 A
V
GS
½2.5
V, I
D
= 6.7 A
Drain-Source On-State Resistance
a
Min.
8
Typ.
Max.
Unit
V
10
- 2.5
0.35
0.8
± 100
1
10
20
0.014
0.016
0.018
0.020
0.025
75
0.017
0.020
0.022
0.030
0.075
mV/°C
V
nA
µA
A
R
DS(on)
V
GS
= 1.8 V, I
D
= 6.4 A
V
GS
= 1.5 V, I
D
= 5.5 A
V
GS
= 1.2 V, I
D
= 1.3 A
Forward
Transconductance
a
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
V
DS
= 4 V, I
D
= 7.2 A
S
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
T
C
= 25 °C
I
S
= 5.8 A, V
GS
½0
0.82
40
I
F
= 5.8 A, dI/dt = 100 A/µs, T
J
= 25 °C
17
15
25
2.1
30
1.2
60
26
A
V
ns
nC
ns
1070
V
DS
= 4 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 4 V, V
GS
= 4.5 V, I
D
= 7.2 A
V
DS
= 4 V, V
GS
= 2.5 V, I
D
= 7.2 A
f = 1 MHz
V
DD
= 4 V, R
L
= 0.7
I
D
5.8 A, V
GEN
= 4.5 V, R
g
= 1
2.4
385
200
10.5
6
1.6
1
12
6
14
65
25
24
12
20
98
38
ns
15.8
9
nC
pF
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 63302
S11-1388-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si2342DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
V
GS
= 5 V thru 2 V
V
GS
= 1.5 V
24
I
D
- Drain Current (A)
5
4
18
I
D
- Drain Current (A)
3
T
C
= 25
°C
12
2
6
V
GS
= 1 V
1
T
C
= 125
°C
T
C
= - 55
°C
0
0
0.5
1
1.5
V
DS
- Drain-to-Source Voltage (V)
2
0
0
0.3
0.6
0.9
1.2
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.040
1500
Transfer Characteristics
0.034
R
DS(on)
- On-Resistance (Ω)
V
GS
= 1.2 V
C - Capacitance (pF)
1200
C
iss
900
0.028
V
GS
= 1.5 V
0.022
V
GS
= 1.8 V
V
GS
= 2.5 V
0.016
V
GS
= 4.5 V
0.010
0
6
12
18
24
30
I
D
- Drain Current (A)
600
C
oss
C
rss
0
0
2
4
6
V
DS
- Drain-to-Source Voltage (V)
8
300
On-Resistance vs. Drain Current and Gate Voltage
4.5
Capacitance
I
D
= 7.2 A
R
DS(on)
- On-Resistance (Normalized)
1.3
I
D
= 7.2 A
V
GS
- Gate-to-Source Voltage (V)
3.6
V
DS
= 2 V
V
GS
= 4.5 V
1.1
2.7
V
DS
= 4 V
1.8
V
DS
= 6.4 V
0.9
0.9
0
0
3
6
9
12
Q
g
- Total Gate Charge (nC)
0.7
- 50
V
GS
= 2.5 V
- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63302
S11-1388-Rev. A, 11-Jul-11
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3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si2342DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
0.03
I
D
=7.2 A
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
T
J
= 150
°C
0.025
1
T
J
= 25
°C
0.02
T
J
= 125
°C
0.015
T
J
= 25
°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.01
1
3
4
V
GS
- Gate-to-Source Voltage (V)
2
5
Source-Drain Diode Forward Voltage
0.7
On-Resistance vs. Gate-to-Source Voltage
10
8
0.55
Power (W)
V
GS(th)
(V)
6
I
D
= 250 μA
0.4
4
0.25
2
T
A
= 25 °C
0.1
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Single Pulse Power (Junction-to-Ambient)
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
100 μs
1 ms
1
10 ms
100 ms
10 s, 1 s
0.1
T
C
= 25
°C
Single Pulse
0.01
0.1
1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
DC
BVDSS Limited
10
Safe Operating Area, Junction-to-Ambient
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Document Number: 63302
S11-1388-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si2342DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
12
9
I
D
- Drain Current (A)
6
Package Limited
3
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
3.0
1.0
2.5
0.8
2.0
Power (W)
Power (W)
0.6
1.5
0.4
1.0
0.2
0.5
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63302
S11-1388-Rev. A, 11-Jul-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
