PD- 93795B
Si3443DV
HEXFET
®
Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
-2.5V Rated
D
1
6
A
D
V
DSS
= -20V
D
2
5
D
G
3
4
S
R
DS(on)
= 0.065Ω
Top View
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET
®
power MOSFET with R
DS(on)
60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and R
DS(on)
reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
TSOP-6
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-4.4
-3.5
-20
2.0
1.3
0.016
31
± 12
-55 to + 150
Units
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
62.5
Units
°C/W
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01/13/03
Si3443DV
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-20
–––
–––
–––
–––
-0.60
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= -250µA
-0.005 ––– V/°C Reference to 25°C, I
D
= -1mA
0.034 0.065
V
GS
= -4.5V, I
D
= -4.4A
0.053 0.090
Ω
V
GS
= -2.7V, I
D
= -3.7A
0.060 0.100
V
GS
= -2.5V, I
D
= -3.5A
––– -1.2
V
V
DS
= V
GS
, I
D
= -250µA
12 –––
S
V
DS
= -10V, I
D
= -4.4 A
––– -1.0
V
DS
= -20V, V
GS
= 0V
µA
––– -5.0
V
DS
= -20V, V
GS
= 0V, T
J
= 70°C
––– -100
V
GS
= -12V
nA
––– 100
V
GS
= 12V
11
15
I
D
= -4.4A
2.2 –––
nC
V
DS
= -10V
2.9 –––
V
GS
= -4.5V
12
50
V
DD
= -10V, V
GS
= -4.5V
33
60
I
D
= -1.0A
ns
70 100
R
G
= 6.0
Ω
72 100
R
D
= 10
Ω,
1079 –––
V
GS
= 0V
220 –––
pF
V
DS
= -10V
152 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
51
30
-2.0
A
-20
-1.2
77
44
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.7A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.7A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on FR-4 board, t
≤
5sec.
Starting T
J
= 25°C, L = 6.8mH
R
G
= 25Ω, I
AS
= -3.0A.
Pulse width
≤
300µs; duty cycle
≤
2%.
2
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Si3443DV
100
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
TOP
100
-I
D
, Drain-to-Source Current (A)
10
-I
D
, Drain-to-Source Current (A)
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
TOP
10
1
1
-1.50V
-1.50V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
T
J
= 25
°
C
10
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -5.6A
-I
D
, Drain-to-Source Current (A)
1.5
T
J
= 150
°
C
1.0
1
0.5
0.1
1.5
V DS = -15V
20µs PULSE WIDTH
2.0
2.5
3.0
3.5
0.0
-60 -40 -20
V
GS
= -4.5V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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Si3443DV
1600
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
15
I
D
=
-4.5A
12
C, Capacitance (pF)
1200
Ciss
V
DS
=-10V
9
800
6
400
Coss
Crss
0
1
10
100
3
0
0
4
8
12
16
20
24
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
-I
D
, Drain Current (A)
I
100
10us
10
100us
1ms
1
10ms
T
J
= 150
°
C
T
J
= 25
°
C
1
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
2.4
0.1
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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Si3443DV
5.0
E
AS
, Single Pulse Avalanche Energy (mJ)
80
4.0
ID
-1.3A
-2.4A
BOTTOM -3.0A
TOP
-I
D
, Drain Current (A)
60
3.0
40
2.0
20
1.0
0.0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
Starting T
J
, Junction Temperature (
°
C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
100
D = 0.50
Thermal Response (Z
thJA
)
0.20
10
0.10
0.05
0.02
1
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
t
2
P
DM
0.1
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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