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SI4112-D-GM

TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC28
电信, 蜂窝式, 射频和基带电路, QCC28

器件类别:热门应用    无线/射频/通信   

厂商名称:SILABS

厂商官网:http://www.silabs.com

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器件参数
参数名称
属性值
功能数量
1
端子数量
28
最大工作温度
85 Cel
最小工作温度
-40 Cel
额定供电电压
3 V
加工封装描述
ROHS COMPLIANT, MS-220VHHD-1, QFN-28
无铅
Yes
欧盟RoHS规范
Yes
状态
ACTIVE
包装形状
SQUARE
包装尺寸
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
表面贴装
Yes
端子形式
NO LEAD
端子间距
0.5000 mm
端子涂层
NOT SPECIFIED
端子位置
QUAD
包装材料
UNSPECIFIED
温度等级
INDUSTRIAL
通信类型
RF AND BASEBAND CIRCUIT
文档预览
Si4133
Si4123/22/13/12
D
U A L
- B
A N D
R F S
Y N T H E S I Z E R
W
I T H
I
N TE G R A T E D
V C O
S
F
OR
W
I R E L E S S
C
O M M U N I C A T I O N S
F
EATURES
Dual-band RF synthesizers
900 MHz to 1.8 GHz

RF2: 750 MHz to 1.5 GHz

RF1:
IF synthesizer

IF:
62.5 to 1000 MHz
Integrated VCOs, loop filters,
varactors, and resonators
Minimal (2) number of external
components required
Low phase noise
Programmable powerdown modes
1 µA standby current
18 mA typical supply current
2.7 to 3.6 V operation
Packages: 24-pin TSSOP,
28-lead QFN

Lead-free
Ordering Information:
See page 31.
and RoHS compliant
Applications
Pin Assignments
Dual-band communications
Digital cellular telephones GSM 850, E-GSM 900, DCS 1800,
PCS 1900
Digital cordless phones
Analog cordless phones
Wireless local loop
Si4133-GT
SCLK
SDATA
GNDR
RFLD
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
SEN
VDDI
IFOUT
GNDI
IFLB
IFLA
GNDD
VDDD
GNDD
XIN
PWDN
AUXOUT
Description
The Si4133 is a monolithic integrated circuit that performs both IF and dual-
band RF synthesis for wireless communications applications. The Si4133
includes three VCOs, loop filters, reference and VCO dividers, and phase
detectors. Divider and powerdown settings are programmable with a three-
wire serial interface.
RFLC
GNDR
RFLB
RFLA
GNDR
GNDR
RFOUT
Functional Block Diagram
VDDR
XIN
SDATA
IFOUT
GNDR
Reference
Amplifier
Powerdown
Control
R
Si4133-GM
SCLK
RF1
PWDN
N
R
Phase
Detector
RF2
RFOUT
GNDR
28 27 26 25 24 23 22
1
2
3
4
5
6
7
8
GNDR
SEN
VDDI
RFLB
GNDI
Phase
Detector
RFLA
21
20
19
GNDI
IFLB
IFLA
GNDD
VDDD
GNDD
XIN
SDATA
SCLK
SEN
Serial
Interface
22-bit
Data
Register
RFLC
RFLD
RFLD
RFLC
GNDR
RFLB
N
R
Phase
Detector
IF
GND
Pad
18
17
16
15
AUXOUT
Test
Mux
IFDIV
IFOUT
RFLA
GNDR
PWDN
GNDR
Patents pending
Rev. 1.61 1/10
Copyright © 2010 by Silicon Laboratories
Si4133
RFOUT
GNDD
VDDR
IFLB
AUXOUT
N
IFLA
9
10 11 12 13 14
Si4133
2
Rev. 1.61
Si4133
T
ABLE O F
C
ONTENTS
Section
Page
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
2. Typical Application Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.1. Serial Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.2. Setting the VCO Center Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.3. Extended Frequency Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.4. Self-Tuning Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.5. Output Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.6. PLL Loop Dynamics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.7. RF and IF Outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.8. Reference Frequency Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.9. Powerdown Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.10. Auxiliary Output (AUXOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4. Control Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
5. Pin Descriptions: Si4133-GT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
6. Pin Descriptions: Si4133-GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
7. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
8. Si4133 Derivative Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31
9. Package Outline: Si4133-GT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
10. Package Outline: Si4133-GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
Rev. 1.61
3
Si4133
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Ambient Temperature
Supply Voltage
Supply Voltages Difference
Symbol
T
A
V
DD
V
(V
DDR
– V
DDD
),
(V
DDI
– V
DDD
)
Test Condition
Min
–40
2.7
–0.3
Typ
25
3.0
Max
85
3.6
0.3
Unit
°C
V
V
Note:
All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise stated.
Table 2. Absolute Maximum Ratings
1,2
Parameter
DC Supply Voltage
Input Current
3
Input Voltage
3
Storage Temperature Range
Symbol
V
DD
I
IN
V
IN
T
STG
Value
–0.5 to 4.0
±10
–0.3 to V
DD
+0.3
–55 to 150
Unit
V
mA
V
o
C
Notes:
1.
Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of
this device should only be done at ESD-protected workstations.
3.
For signals SCLK, SDATA, SEN, PWDN and XIN.
4
Rev. 1.61
Si4133
Table 3. DC Characteristics
(V
DD
= 2.7 to 3.6 V, T
A
= –40 to 85 °C)
Parameter
Total Supply Current
1
RF1 Mode Supply Current
1
RF2 Mode Supply Current
1
IF Mode Supply Current
1
Standby Current
High Level Input Voltage
2
Low Level Input Voltage
2
High Level Input Current
2
Low Level Input Current
2
High Level Output Voltage
3
Low Level Output Voltage
3
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
V
IH
=
3.6 V,
V
DD
= 3.6 V
V
IL
=
0 V,
V
DD
=
3.6 V
I
OH
= –500 µA
I
OH
= 500 µA
PWDN = 0
Symbol
Test Condition
RF1 and IF operating
Min
0.7 V
DD
–10
–10
V
DD
–0.4
Typ
18
10
9
8
1
Max
27
16
16
13
0.3 V
DD
10
10
0.4
Unit
mA
mA
mA
mA
µA
V
V
µA
µA
V
V
Notes:
1.
RF1 = 1.6 GHz, RF2 = 1.1 GHz, IFOUT = 550 MHz, LPWR = 0.
2.
For signals SCLK, SDATA, SEN, and PWDN.
3.
For signal AUXOUT.
Rev. 1.61
5
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参数对比
与SI4112-D-GM相近的元器件有:SI4112-D-GT、SI4113-D-GM、SI4113-D-GT、SI4113-D-ZT1、SI4122-D-GM、SI4122-D-GT、SI4123-D-GM、SI4123-D-GT、SI4133-D-GT。描述及对比如下:
型号 SI4112-D-GM SI4112-D-GT SI4113-D-GM SI4113-D-GT SI4113-D-ZT1 SI4122-D-GM SI4122-D-GT SI4123-D-GM SI4123-D-GT SI4133-D-GT
描述 TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC28 TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PDSO24 TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC28 TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PDSO24 TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC28 TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC28 TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC28 TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC28 TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PDSO24 TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PDSO24
功能数量 1 1 1 1 1 1 1 1 1 1
端子数量 28 24 28 24 28 28 28 28 24 24
最大工作温度 85 Cel 85 Cel 85 Cel 85 Cel 85 Cel 85 Cel 85 Cel 85 Cel 85 Cel 85 Cel
最小工作温度 -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel
额定供电电压 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
加工封装描述 ROHS COMPLIANT, MS-220VHHD-1, QFN-28 ROHS COMPLIANT, TSSOP-24 ROHS COMPLIANT, MS-220VHHD-1, QFN-28 ROHS COMPLIANT, TSSOP-24 ROHS COMPLIANT, MS-220VHHD-1, QFN-28 ROHS COMPLIANT, MS-220VHHD-1, QFN-28 ROHS COMPLIANT, MS-220VHHD-1, QFN-28 ROHS COMPLIANT, MS-220VHHD-1, QFN-28 ROHS COMPLIANT, TSSOP-24 ROHS COMPLIANT, TSSOP-24
无铅 Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes
欧盟RoHS规范 Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes
状态 ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
包装形状 SQUARE RECTANGULAR SQUARE RECTANGULAR SQUARE SQUARE SQUARE SQUARE RECTANGULAR 矩形的
包装尺寸 CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
表面贴装 Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes
端子形式 NO LEAD GULL WING NO LEAD GULL WING NO LEAD NO LEAD NO LEAD NO LEAD GULL WING GULL WING
端子间距 0.5000 mm 0.6500 mm 0.5000 mm 0.6500 mm 0.5000 mm 0.5000 mm 0.5000 mm 0.5000 mm 0.6500 mm 0.6500 mm
端子涂层 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
端子位置 QUAD DUAL QUAD DUAL QUAD QUAD QUAD QUAD DUAL
包装材料 UNSPECIFIED PLASTIC/EPOXY UNSPECIFIED PLASTIC/EPOXY UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED PLASTIC/EPOXY 塑料/环氧树脂
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
通信类型 RF AND BASEBAND CIRCUIT RF AND BASEBAND CIRCUIT RF AND BASEBAND CIRCUIT RF AND BASEBAND CIRCUIT RF AND BASEBAND CIRCUIT RF AND BASEBAND CIRCUIT RF AND BASEBAND CIRCUIT RF AND BASEBAND CIRCUIT RF AND BASEBAND CIRCUIT 射频和基带电路
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