Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
Channel-1
Channel-2
30
30
R
DS(on)
(Ω)
0.017 at V
GS
= 10 V
0.0195 at V
GS
= 4.5 V
0.010 at V
GS
= 10 V
0.0115 at V
GS
= 4.5 V
I
D
(A)
a
Q
g
(Typ.)
8.0
12.5
7.5
15.2
17
14.1
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
30
V
SD
(V)
Diode Forward Voltage
0.43 V at 1.0 A
I
F
(A)
a
3.8
G
1
G
1
S
2
S
2
G
2
1
2
3
4
Top View
Ordering Information:
Si4618DY-T1-E3 (Lead (Pb)-free)
Si4618DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
7
6
5
D
1
S
1
/D
2
S
1
/D
2
S
1
/D
2
Schottky Diode
G
2
N-Channel 2
MOSFET
S
2
N-Channel 1
MOSFET
• Notebook Logic dc-to-dc
• Low Current dc-to-dc
D
1
SO-8
S
1
/D
2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
SM
I
AS
E
AS
P
D
T
J
, T
stg
Channel-1
30
± 16
8.0
6.4
6.7
b, c
5.4
b, c
35
1.8
1.25
b, c
35
15
11.2
1.98
1.26
1.38
b, c
0.88
b, c
- 55 to 150
Channel-2
30
± 16
15.2
12.1
11.4
b, c
9.1
b, c
60
3.8
2.4
b, c
35
15
11.2
4.16
2.66
2.35
b, c
1.5
b, c
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
thJA
t
≤
10 s
Maximum Junction-to-Ambient
b, d
R
thJF
51
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 125 °C/W (Channel-1) and 100 °C/W (Channel-2).
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
Channel-1
Typ.
Max.
72
90
63
Channel-2
Typ.
Max.
43
53
25
30
Unit
°C/W
www.vishay.com
1
Si4618DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, I
D
= 1 mA
I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 8 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 8 A
V
GS
= 4.5 V, I
D
= 5 A
V
GS
= 4.5 V, I
D
= 5 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
Channel-2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 8 A
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 8 A
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 8 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 8 A
f = 1 MHz
Ch-1
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
1535
2290
205
360
91
117
29
39
12.5
17
4.1
5.6
3.4
4
1.8
1.9
3.0
3.0
Ω
44
59
19
26
nC
pF
g
fs
V
DS
= 15 V, I
D
= 8 A
V
DS
= 15 V, I
D
= 8 A
Ch-1
Ch-2
Ch-1
Ch-1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
20
0.014
0.0083
0.016
40
47
0.017
0.010
0.0195
Ω
3
0.05
1
1
30
30
35
-6
2.5
2.5
100
100
0.001
0.5
0.025
15
A
mA
µA
V
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
0.0095 0.0115
S
www.vishay.com
2
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
Si4618DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Symbol
Test Conditions
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 10 V, R
g
= 1
Ω
Channel-2
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 10 V, R
g
= 1
Ω
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
Channel-2
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
I
S
= 2 A
I
S
= 1 A
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
I
F
= 4 A, dI/dt = 100 A/µs, T
J
= 25 °C
Channel-2
I
F
= 4 A, dI/dt = 100 A/µs, T
J
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Typ.
a
8
9
22
24
20
26
8
8
24
24
87
97
30
35
34
45
Max.
15
16
33
36
30
39
15
15
36
36
130
145
45
53
51
68
1.8
3.8
35
35
Unit
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
ns
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
A
0.77
0.37
22
26
15
15
13
13
9
13
1.1
0.43
33
39
23
23
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
据悉，在NAND需求不断上升的背景下，SanDisk和Hynix公司计划建立一个联营晶圆厂。根据《华尔街日报》上一篇文章报道，SanDisk和Hynix计划拓宽他们在过去的三月份达成的合作协议。 根据SanDisk CEO Eli Harari提供的信息，《华尔街日报》写道，这两家公司计划共同投资建造生产NAND闪存产品的300mm晶圆厂。虽然Harari未提供任何进一步的细节，但《华尔街日报...[详细]
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