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SI533WA00100DGR

DUAL FREQUENCY CRYSTAL OSCILLATOR (XO) (10 MHZ TO 1.4 GHZ)

厂商名称:SILABS

厂商官网:http://www.silabs.com

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Si533
R
EVISION
D
D
U A L
F
R E Q U E N C Y
C
R Y S TA L
O
S C I L L A T O R
(XO )
(10 M H
Z T O
1.4 G H
Z
)
Features
Available with any-rate output
frequencies from 10 MHz to 945 MHz
and select frequencies to 1.4 GHz
2 selectable output frequencies
3rd generation DSPLL
®
with superior
jitter performance
3x better frequency stability than
SAW-based oscillators
Pin 1 output enable (OE)
Internal fixed crystal frequency
ensures high reliability and low
aging
Available CMOS, LVPECL,
LVDS, and CML outputs
3.3, 2.5, and 1.8 V supply options
Industry-standard 5 x 7 mm
package and pinout
Pb-free/RoHS-compliant
Si5602
Applications
SONET/SDH
Networking
SD/HD video
Clock and data recovery
FPGA/ASIC clock generation
Ordering Information:
See page 7.
Description
The Si533 dual frequency XO utilizes Silicon Laboratories’ advanced
DSPLL
®
circuitry to provide a low jitter clock at high frequencies. The Si533
is available with any-rate output frequency from 10 to 945 MHz and select
frequencies to 1400 MHz. Unlike a traditional XO, where a different crystal is
required for each output frequency, the Si533 uses one fixed crystal to
provide a wide range of output frequencies. This IC based approach allows
the crystal resonator to provide exceptional frequency stability and reliability.
In addition, DSPLL clock synthesis provides superior supply noise rejection,
simplifying the task of generating low jitter clocks in noisy environments
typically found in communication systems. The Si533 IC based XO is factory
configurable for a wide variety of user specifications including frequency,
supply voltage, output format, and temperature stability. Specific
configurations are factory programmed at time of shipment, thereby
eliminating long lead times associated with custom oscillators.
Pin Assignments:
See page 6.
(Top View)
OE
FS
GND
1
2
3
6
5
4
V
DD
CLK–
CLK+
LVDS/LVPECL/CML
Functional Block Diagram
V
DD
CLK– CLK+
OE
FS
1
2
3
CMOS
6
5
4
V
DD
NC
CLK+
Fixed
Frequency
XO
Any-rate
10–1400 MHz
DSPLL®
Clock
Synthesis
GND
OE
FS
GND
Rev. 1.1 6/07
Copyright © 2007 by Silicon Laboratories
Si533
Si533
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Supply Voltage
1
Symbol
V
DD
Test Condition
3.3 V option
2.5 V option
1.8 V option
Supply Current
I
DD
Output enabled
LVPECL
CML
LVDS
CMOS
Tristate mode
Output Enable (OE)
and Frequency Select (FS)
2
Operating Temperature Range
T
A
V
IH
V
IL
Min
2.97
2.25
1.71
0.75 x V
DD
–40
Typ
3.3
2.5
1.8
111
99
90
81
60
Max
3.63
2.75
1.89
121
108
98
88
75
0.5
85
V
ºC
V
Units
mA
Notes:
1.
Selectable parameter specified by part number. See Section 3. "Ordering Information" on page 7 for further details.
2.
OE and FS pins include a 17 kΩ pullup resistor to V
DD
.
Table 2. CLK± Output Frequency Characteristics
Parameter
Nominal Frequency
1,2
Symbol
f
O
Test Condition
LVPECL/LVDS/CML
CMOS
Min
10
10
–7
–20
–50
Typ
±1.5
Max
945
160
+7
+20
+50
±3
±10
Units
MHz
Initial Accuracy
f
i
1,3
Measured at +25 °C at time of
shipping
ppm
Temperature Stability
ppm
ppm
ppm
Aging
f
a
Frequency drift over first year
Frequency drift over 15 year life
Notes:
1.
See Section 3. "Ordering Information" on page 7 for further details.
2.
Specified at time of order by part number. Also available in frequencies from 970 to 1134 MHz and 1213 to 1417 MHz.
3.
Selectable parameter specified by part number.
4.
Time from powerup or tristate mode to f
O
.
2
Rev. 1.1
Si533
Table 2. CLK± Output Frequency Characteristics (Continued)
Parameter
Symbol
Test Condition
Temp stability = ±7 ppm
Total Stability
Temp stability = ±20 ppm
Temp stability = ±50 ppm
Powerup Time
4
Settling Time After FS Change
t
OSC
t
FRQ
Min
Typ
Max
±20
±31.5
±61.5
10
10
Units
ppm
ppm
ppm
ms
ms
Notes:
1.
See Section 3. "Ordering Information" on page 7 for further details.
2.
Specified at time of order by part number. Also available in frequencies from 970 to 1134 MHz and 1213 to 1417 MHz.
3.
Selectable parameter specified by part number.
4.
Time from powerup or tristate mode to f
O
.
Table 3. CLK± Output Levels and Symmetry
Parameter
LVPECL Output Option
1
Symbol
V
O
V
OD
V
SE
Test Condition
mid-level
swing (diff)
swing (single-ended)
mid-level
swing (diff)
Min
V
DD
– 1.42
1.1
0.55
1.125
0.5
Typ
Max
V
DD
– 1.25
1.9
0.95
1.275
0.9
Units
V
V
PP
V
PP
V
V
PP
1.20
0.7
LVDS Output Option
2
V
O
V
OD
CML Output Option
2
V
O
V
OD
mid-level
swing
(diff)
I
OH
= 32 mA
I
OL
= 32 mA
0.70
0.8 x V
DD
V
DD
– 0.75
0.95
1
1.20
V
DD
V
V
PP
V
CMOS Output Option
3
V
OH
V
OL
45
0.4
350
55
Rise/Fall time (20/80%)
t
R,
t
F
LVPECL/LVDS/CML
CMOS with C
L
= 15 pF
ps
ns
%
Symmetry (duty cycle)
SYM
LVPECL:
LVDS:
CMOS:
V
DD
– 1.3 V (diff)
1.25 V (diff)
V
DD
/2
Notes:
1.
50
to V
DD
– 2.0 V.
2.
R
term
= 100
(differential).
3.
C
L
= 15 pF
Rev. 1.1
3
Si533
Table 4. CLK± Output Phase Jitter
Parameter
Phase Jitter (RMS)*
for F
OUT
> 500 MHz
Phase Jitter (RMS)*
for F
OUT
of 125 to 500 MHz
Symbol
Test Condition
12 kHz to 20 MHz (OC-48)
50 kHz to 80 MHz (OC-192)
Min
Typ
0.25
0.26
0.36
0.34
Max
0.40
0.37
0.50
0.42
ps
Units
ps
φ
J
φ
J
12 kHz to 20 MHz (OC-48)
50 kHz to 20 MHz (OC-192)
*Note:
Differential Modes: LVPECL/LVDS/CML. Refer to AN256 for further information.
Table 5. CLK± Output Period Jitter
Parameter
Period Jitter*
Symbol
J
PER
Test Condition
RMS
Peak-to-Peak
Min
Typ
2
14
Max
Units
ps
*Note:
Any output mode, including CMOS, LVPECL, LVDS, CML. N = 1000 cycles. Refer to AN279 for further information.
Table 6. CLK± Output Phase Noise (Typical)
Offset Frequency (f)
100 Hz
1 kHz
10 kHz
100 kHz
1 MHz
10 MHz
100 MHz
120.00 MHz
LVDS
–112
–122
–132
–137
–144
–150
n/a
156.25 MHz
LVPECL
–105
–122
–128
–135
–144
–147
n/a
622.08 MHz
LVPECL
–97
–107
–116
–121
–134
–146
–148
Units
dBc/Hz
4
Rev. 1.1
Si533
Table 7. Absolute Maximum Ratings
1
Parameter
Maximum Operating Temperature
Supply Voltage
Input Voltage (any input pin)
Storage Temperature
ESD Sensitivity (HBM, per JESD22-A114)
Soldering Temperature (Pb-free profile)
2
Soldering Temperature Time @ T
PEAK
(Pb-free profile)
2
Symbol
T
AMAX
V
DD
V
I
T
S
ESD
T
PEAK
t
P
Rating
85
–0.5 to +3.8
–0.5 to V
DD
+ 0.3
–55 to +125
2500
260
20–40
Units
ºC
Volts
Volts
ºC
Volts
ºC
seconds
Notes:
1.
Stresses beyond those listed in Absolute Maximum Ratings may cause permanent damage to the device. Functional
operation or specification compliance is not implied at these conditions. Exposure to maximum rating conditions for
extended periods may affect device reliability.
2.
The device is compliant with JEDEC J-STD-020C. Refer to Si5xx Packaging FAQ available for download at
www.silabs.com/VCXO
for further information, including soldering profiles.
Table 8. Environmental Compliance
The Si533 meets the following qualification test requirements.
Parameter
Mechanical Shock
Mechanical Vibration
Solderability
Gross & Fine Leak
Resistance to Solvents
Conditions/Test Method
MIL-STD-883F, Method 2002.3 B
MIL-STD-883F, Method 2007.3 A
MIL-STD-883F, Method 203.8
MIL-STD-883F, Method 1014.7
MIL-STD-883F, Method 2016
Rev. 1.1
5
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