HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
无铅
Yes
欧盟RoHS规范
Yes
中国RoHS规范
Yes
状态
ACTIVE
包装形状
SQUARE
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
C BEND
端子涂层
PURE MATTE TIN
端子位置
DUAL
包装材料
UNSPECIFIED
结构
SINGLE WITH BUILT-IN DIODE
壳体连接
DRAIN
元件数量
1
晶体管应用
SWITCHING
晶体管元件材料
SILICON
通道类型
P-CHANNEL
场效应晶体管技术
METAL-OXIDE SEMICONDUCTOR
操作模式
ENHANCEMENT
晶体管类型
GENERAL PURPOSE POWER
最大漏电流
35 A
额定雪崩能量
20 mJ
最大漏极导通电阻
0.0046 ohm
最大漏电流脉冲
80 A
文档预览
New Product
Si7629DN
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 20
R
DS(on)
()
0.0046 at V
GS
= - 10 V
0.0062 at V
GS
= - 4.5 V
0.0117 at V
GS
= - 2.5 V
I
D
(A)
- 35
a
- 35
a
- 35
a
FEATURES
Q
g
(Typ.)
59 nC
• TrenchFET
®
Gen III P-Channel Power MOSFET
• 100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK® 1212-8
APPLICATIONS
• Adaptor Switch
S
3.3 mm
S
1
2
3
S
S
3.3 mm
• Battery Switch
• Load Switch
G
G
4
D
8
7
6
5
D
D
D
Bottom
View
Ordering Information:
Si7629DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
d, e
Symbol
V
DS
V
GS
Limit
- 20
± 12
- 35
a
- 35
a
- 21.3
b, c
- 17.1
b, c
- 80
- 35
a
- 3.3
b, c
- 20
20
52
33
3.7
b, c
2.4
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
A
mJ
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
t
10 s
Maximum Junction-to-Ambient
b, f
°C/W
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
Document Number: 70556
S12-0679-Rev. C, 26-Mar-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
1
Symbol
R
thJA
R
thJC
Typical
26
1.9
Maximum
33
2.4
Unit
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si7629DN
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Resistance
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 4 A, V
GS
= 0 V
- 0.70
36
25
15
21
T
C
= 25 °C
V
DD
= - 10 V, R
L
= 1
I
D
- 10 A, V
GEN
= - 10 V, R
g
= 1
V
DD
= - 10 V, R
L
= 1
I
D
- 10 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
0.4
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 10 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 10 A
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-
5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 20 A
V
GS
= - 4.5 V, I
D
= - 15 A
V
GS
= - 2.5 V, I
D
= - 10 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
- 35
- 80
- 1.1
55
40
A
V
ns
nC
ns
5790
700
705
118
59
9.2
17.1
2.2
35
38
75
28
13
8
80
10
4
60
65
130
55
25
16
150
20
ns
177
88
nC
pF
V
DS
= - 10 V, I
D
= - 20 A
- 30
0.0038
0.0051
0.0097
64
0.0046
0.0062
0.0117
S
- 0.4
- 20
- 13
3.7
- 1.5
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical support, please contact:
pmostechsupport@vishay.com
Document Number: 70556
S12-0679-Rev. C, 26-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si7629DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
V
GS
= 10 V thru 3 V
I
D
- Drain Current (A)
10
64
I
D
- Drain Current (A)
8
48
6
32
V
GS
= 2 V
16
4
T
C
= 25 °C
2
T
C
= 125 °C
T
C
= - 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
0.6
1.2
1.8
2.4
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.020
8500
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.016
C - Capacitance (pF)
6800
V
GS
= 2.5 V
C
iss
5100
0.012
0.008
V
GS
= 4.5 V
3400
C
rss
1700
0.004
V
GS
= 10 V
0.000
0
16
32
48
I
D
- Drain Current (A)
64
80
C
oss
0
0
10
15
V
DS
- Drain-to-Source Voltage (V)
5
20
On-Resistance vs. Drain Current
10
R
DS(on)
- On-Resistance (Normalized)
Capacitance
1.6
I
D
= 10 A
V
GS
- Gate-to-Source Voltage (V)
I
D
= 20 A
1.4
V
GS
= 10 V
8
V
DS
= 10 V
6
V
DS
= 15 V
4
V
DS
= 20 V
2
1.2
V
GS
= 2.5 V
1.0
0.8
0
0
25
50
75
100
Q
g
- Total Gate Charge (nC)
125
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70556
S12-0679-Rev. C, 26-Mar-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si7629DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.025
1
T
J
= 150 °C
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
0.020
0.015
T
J
= 125 °C
0.010
0.1
0.01
0.005
T
J
= 25 °C
0.001
0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
1.2
0
0
1
2
3
4
5
6
7
8
V
GS
- Gate-to-Source Voltage (V)
9
10
Source-Drain Diode Forward Voltage
0.8
100
On-Resistance vs. Gate-to-Source Voltage
0.6
I
D
= 250 μA
Power (W)
80
V
GS(th)
Variance (V)
0.4
60
0.2
I
D
= 1 mA
40
0
20
- 0.2
- 0.4
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
100
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
1 ms
10 ms
1
100 ms
1s
10 s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
DC
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
www.vishay.com
4
For technical support, please contact:
pmostechsupport@vishay.com
Document Number: 70556
S12-0679-Rev. C, 26-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si7629DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
80
I
D
- Drain Current (A)
60
40
Package Limited
20
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
Current Derating*
65
2.0
52
1.6
Power (W)
26
Power (W)
39
1.2
0.8
13
0.4
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
T
A
- Ambient Temperature (°C)
150
Power Derating, Junction-to-Case
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 70556
S12-0679-Rev. C, 26-Mar-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
