e. Maximum under steady state conditions is 85 °C/W.
f. Case is defined as top surface of the package.
S15-0932-Rev. B, 20-Apr-15
Document Number: 63355
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8497DB
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
TEST CONDITIONS
V
GS
= 0, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= -30 V, V
GS
= 0 V
V
DS
= -30 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
-5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -1.5 A
V
GS
= -2.5 V, I
D
= -1 A
V
GS
= -2 V, I
D
= -0.5 A
V
DS
= -15 V, I
D
= -1.5 A
MIN.
-30
-
-
-0.5
-
-
-
-5
-
-
-
-
-
V
DS
= -15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -15 V, V
GS
= -10 V, I
D
= -1.5 A
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -1.5 A
V
GS
= -0.1 V, f = 1 MHz
V
DD
= -15 V, R
L
= 10
I
D
-1.5 A, V
GEN
= -4.5 V, R
g
= 1
-
-
-
-
-
-
-
-
-
-
-
-
V
DD
= -15 V, R
L
= 10
I
D
-1.5 A, V
GEN
= -10 V, R
g
= 1
-
-
-
T
C
= 25 °C
I
S
= -1.5 A, V
GS
= 0
-
-
-
-
I
F
= -1.5 A, dI/dt = 100 A/μs, T
J
= 25 °C
-
-
-
TYP.
-
-29
3.1
-
-
-
-
-
0.043
0.058
0.075
10
1320
121
102
32.6
16.3
2.5
4.9
8
17
15
60
25
50
10
75
22
-
-
-0.73
21
7
8
13
MAX.
-
-
-
-1.1
± 100
-1
-10
-
0.053
0.071
0.120
-
-
-
-
49
25
-
-
-
35
30
120
50
100
20
150
45
-15
-20
-1.2
40
15
-
-
ns
nC
pF
S
UNIT
V
mV/°C
V
nA
μA
A
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
Forward Transconductance
a
Dynamic
b
a
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0932-Rev. B, 20-Apr-15
Document Number: 63355
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8497DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
V
GS
= 5 V thru 2.5 V
8
15
I
D
- Drain Current (A)
I
D
- Drain Current (A)
6
T
C
= 25
°C
10
Vishay Siliconix
10
V
GS
= 2 V
4
T
C
= 125
°C
T
C
= - 55
°C
0
5
2
V
GS
= 1.5 V
0
0
0.5
1
1.5
2
2.5
V
DS
- Drain-to-Source Voltage (V)
3
0
0.5
1
1.5
2
V
GS
-
Gate-to-Source
Voltage (V)
2.5
Output Characteristics
Transfer Characteristics
0.20
V
GS
= 2 V
0.16
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
2400
2000
1600
C
iss
1200
0.12
0.08
V
GS
= 2.5 V
V
GS
= 4.5 V
800
0.04
400
C
oss
C
rss
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
0.00
0
5
10
I
D
- Drain Current (A)
15
20
0
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 1.5 A
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 15 V
1.6
I
D
= 1.5 A;
V
GS
= 4.5 V
I
D
= 1.5 A;
V
GS
= 2.5 V
1.2
1.4
6
V
DS
= 7.5 V
4
V
DS
= 24 V
1.0
I
D
= 0.5 A; V
GS
= 2 V
2
0.8
0
0
5
10
15
20
25
Q
g
- Total
Gate
Charge (nC)
30
35
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S15-0932-Rev. B, 20-Apr-15
On-Resistance vs. Junction Temperature
Document Number: 63355
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8497DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.16
I
D
= 1.5 A
R
DS(on)
- On-Resistance (Ω)
0.12
Vishay Siliconix
I
S
-
Source
Current (A)
10
T
J
= 150
°C
0.08
T
J
= 125
°C
T
J
= 25
°C
1
0.04
T
J
= 25
°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.00
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
1.0
0.9
0.8
25
20
0.7
0.6
0.5
0.4
0.3
- 50
Power (W)
75
100
125
150
V
GS(th)
(V)
15
I
D
= 250 μA
10
5
- 25
0
25
50
0
0.001
0.01
0.1
T
J
- Temperature (°C)
1
Pulse (s)
10
100
1000
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
100 us
1
1 ms
10 ms
0.1
T
A
= 25
°C
BVDSS Limited
100 ms
1
s
10
s
DC
0.01
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
100
Safe Operating Area, Junction-to-Ambient
S15-0932-Rev. B, 20-Apr-15
Document Number: 63355
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8497DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
16
Vishay Siliconix
15
12
12
Power Dissipation (W)
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
I
D
- Drain Current (A)
9
8
6
4
3
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling
the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this
rating falls below the package limit.
S15-0932-Rev. B, 20-Apr-15
Document Number: 63355
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
