d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 62779
S12-2394-Rev. A, 15-Oct-12
For technical questions, contact:
pmostechsupport@vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA483DJ
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 8 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 8 A, V
GS
= 0
- 0.8
17
10
10
7
T
C
= 25 °C
- 12
- 40
- 1.2
40
20
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 15 V, R
L
= 1.9
I
D
- 8 A, V
GEN
= - 10 V, R
g
= 1
V
DD
= - 15 V, R
L
= 1.9
I
D
- 8 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
0.7
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 10 A
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 10 A
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
1550
175
150
29
14
4.4
4.8
3.7
37
30
25
8
10
10
27
9
7.4
80
60
50
20
10
20
55
20
ns
45
21
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-
5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 5 A
V
GS
= - 4.5 V, I
D
= - 3 A
V
DS
= - 10 V, I
D
= - 5 A
- 10
0.016
0.024
23
0.021
0.030
-1
- 30
- 21
4.6
- 2.2
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact:
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Document Number: 62779
S12-2394-Rev. A, 15-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA483DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
20
V
GS
= 10 V thru 5 V
V
GS
= 4 V
16
30
I
D
- Drain Current (A)
I
D
- Drain Current (A)
12
20
8
T
C
= 25
°C
10
V
GS
= 3 V
4
T
C
= 125
°C
T
C
= - 55
°C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
0
0.0
1.0
2.0
3.0
4.0
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.040
2000
Transfer Characteristics
1600
R
DS(on)
- On-Resistance (Ω)
0.030
V
GS
= 4.5 V
0.020
C - Capacitance (pF)
1200
C
iss
800
V
GS
= 10 V
0.010
400
C
rss
0.000
0
10
20
I
D
- Drain Current (A)
30
40
0
0
C
oss
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
R
DS(on)
- On-Resistance (Normalized)
1.6
I
D
= 5 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
8
I
D
= 10 A
V
GS
= 10 V
V
DS
= 15 V
1.4
V
GS
= 4.5 V
1.2
6
V
DS
= 7.5 V
V
DS
= 24 V
4
1.0
2
0.8
0
0
7
14
21
28
35
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62779
S12-2394-Rev. A, 15-Oct-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA483DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.080
I
D
= 8 A
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.060
10
T
J
= 150
°C
0.040
T
J
= 125
°C
0.020
T
J
= 25
°C
T
J
= 25
°C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.000
0.0
2.0
4.0
6.0
8.0
10.0
V
GS
- Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
2.0
On-Resistance vs. Gate-to-Source Voltage
30
1.8
25
20
Power (W)
100
125
150
V
GS(th)
(V)
1.6
15
1.4
I
D
= 250 μA
10
1.2
5
1.0
- 50
- 25
0
25
50
75
0
0.001
0.01
0.1
T
J
- Temperature (°C)
1
Time (s)
10
100
1000
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
100 μs
1 ms
1
10 ms
T
A
= 25
°C
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
0.1
Safe Operating Area, Junction-to-Ambient
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For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62779
S12-2394-Rev. A, 15-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA483DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
20
24
18
Power Dissipation (W)
75
100
125
150
15
I
D
- Drain Current (A)
10
12
Package Limited
6
5
0
0
25
50
T
C
- Case Temperature (°C)
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62779
S12-2394-Rev. A, 15-Oct-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
