IRF734, SiHF734
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
45
6.6
24
Single
D
FEATURES
450
1.2
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free
RoHS
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220
G
S
G
D
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220
IRF734PbF
SiHF734-E3
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
Energy
b
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
LIMIT
450
± 20
4.9
3.1
20
0.59
330
4.9
7.4
74
4.0
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche
Repetitive Avalanche
Repetitive Avalanche Current
a
Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 24 mH, R
G
= 25
Ω,
I
AS
= 4.9 A (see fig. 12).
c. I
SD
≤
4.9 A, dI/dt
≤
80 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
Document Number: 91049
S-82998-Rev. A, 12-Jan-08
www.vishay.com
1
IRF734, SiHF734
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
1.7
°C/W
UNIT
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 20 V
V
DS
= 450 V, V
GS
= 0 V
V
DS
= 360 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 2.9 A
b
A
b
V
DS
= 50 V, I
D
= 2.9
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
I
D
= 4.9 A, V
DS
= 360 V
see fig. 6 and 13
b
450
-
2.0
-
-
-
-
3.0
-
0.63
-
-
-
-
-
-
-
-
4.0
± 100
25
250
1.2
-
V
V/°C
V
nA
µA
Ω
S
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 10 V
-
-
-
-
-
-
-
680
190
75
-
-
-
5.9
22
40
21
4.5
7.5
-
-
-
45
6.6
24
-
-
-
-
-
nH
-
ns
nC
pF
V
DD
= 225 V, I
D
= 4.9 A
R
G
= 12
Ω,
R
D
= 45
Ω,
see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
-
-
-
-
-
460
1.8
4.9
A
20
2.0
690
2.7
V
ns
µC
G
S
T
J
= 25 °C, I
S
= 4.9 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 4.9 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
www.vishay.com
2
Document Number: 91049
S-82998-Rev. A, 12-Jan-08
IRF734, SiHF734
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
1
I
D
, Drain Current (A)
I
D
, Drain Current (A)
V
GS
15
V
10
V
8.0 V
7.0
V
6.0
V
5.5
V
5.0
V
Bottom 4.5
V
Top
10
1
150
°
C
25
°
C
10
0
10
0
4.5
V
20
µs
Pulse
Width
T
C
=
25 °C
10
0
10
1
20
µs
Pulse
Width
V
DS
=
50
V
4
91049_03
5
6
7
8
9
10
91049_01
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
V
GS,
Gate-to-Source
Voltage
(V)
Fig. 3 - Typical Transfer Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
10
1
I
D
, Drain Current (A)
V
GS
Top
15
V
10
V
8.0 V
7.0
V
6.0
V
5.5
V
5.0
V
Bottom 4.5
V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
D
= 4.9 A
V
GS
= 10
V
4.5
V
10
0
20
µs
Pulse
Width
T
C
=
150 °C
10
0
10
1
0.0
- 60 - 40 - 20 0
20 40 60
80
100 120 140 160
91049_02
V
DS,
Drain-to-Source
Voltage
(V)
91049_04
T
J,
Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Document Number: 91049
S-82998-Rev. A, 12-Jan-08
www.vishay.com
3
IRF734, SiHF734
Vishay Siliconix
1400
1200
I
SD
, Reverse Drain Current (A)
Capacitance (pF)
1000
800
600
V
GS
= 0
V,
f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
10
1
150
°
C
25
°
C
C
oss
400
C
rss
200
0
10
0
10
0
10
1
0.5
91049_07
V
GS
= 0
V
0.7
0.9
1.1
1.3
1.5
91049_05
V
DS,
Drain-to-Source
Voltage
(V)
V
SD
, Source-to-Drain
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
V
GS
, Gate-to-Source
Voltage
(V)
I
D
= 4.9 A
V
DS
= 360
V
V
DS
= 225
V
10
2
5
Operation in this area limited
by
R
DS(on)
10
µs
100
µs
1
ms
10
ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
1
2
5
I
D
, Drain Current (A)
16
V
DS
= 90
V
2
10
5
12
8
2
1
5
4
For test circuit
see figure 13
2
0
0
91049_06
0.1
10
10
20
30
40
50
91049_08
2
5
10
2
2
5
10
3
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
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4
Document Number: 91049
S-82998-Rev. A, 12-Jan-08
IRF734, SiHF734
Vishay Siliconix
V
DS
V
GS
5.0
R
G
R
D
D.U.T.
+
-
V
DD
I
D
, Drain Current (A)
4.0
10
V
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
3.0
Fig. 10a - Switching Time Test Circuit
2.0
V
DS
1.0
90
%
0.0
25
91049_09
50
75
100
125
150
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
T
C
, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
0
−
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
(Thermal Response)
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
10
-2
0.1
1
10
0.1
10
-2
10
-5
91049_11
10
-4
10
-3
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary
t
p
to obtain
required I
AS
R
G
V
DS
V
DS
t
p
V
DD
D.U.T.
I
AS
+
-
V
DD
V
DS
10
V
t
p
0.01
Ω
I
AS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91049
S-82998-Rev. A, 12-Jan-08
www.vishay.com
5
