IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
24
6.5
13
Single
D
FEATURES
500
1.7
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C
oss
Specified
• Lead (Pb)-free Available
DPAK
(TO-252)
IPAK
(TO-251)
G
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
S
N-Channel
MOSFET
• High Speed Power Switching
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
DPAK (TO-252)
IRFR430APbF
SiHFR430A-E3
IRFR430A
SiHFR430A
DPAK (TO-252)
IRFR430ATRPbF
a
SiHFR430AT-E3
a
IRFR430ATR
a
SiHFR430AT
a
DPAK (TO-252)
IRFR430ATRLPbF
a
SiHFR430ATL-E3
a
IRFR430ATRL
a
SiHFR430ATL
a
DPAK (TO-252)
IRFR430ATRRPbF
a
SiHFR430ATR-E3
a
IRFR430ATRR
a
SiHFR430ATR
a
IPAK (TO-251)
IRFU430APbF
SiHFU430A-E3
IRFU430A
SiHFU430A
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a.
b.
c.
d.
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
Starting T
J
= 25 °C, L = 11 mH, R
G
= 25
Ω,
I
AS
= 5.0 A (see fig. 12).
I
SD
≤
5.0 A, dI/dt
≤
320 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
1.6 mm from case.
for 10 s
T
C
= 25 °C
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 30
5.0
3.2
20
0.91
130
5.0
11
110
3.0
- 55 to + 150
300
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
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IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
1.1
°C/W
UNIT
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 3.0 A
b
V
DS
= 50 V, I
D
= 3.0 A
500
-
2.0
-
-
-
-
2.3
-
0.60
-
-
-
-
-
-
-
-
4.5
± 100
25
250
1.7
-
V
V/°C
V
nA
µA
Ω
S
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
DS
= 1.0 V, f = 1.0 MHz
V
GS
= 10 V
V
DS
= 400 V, f = 1.0 MHz
V
DS
= 0 V to 400 V
c
V
GS
= 10 V
I
D
= 5.0 A, V
DS
= 400 V,
see fig. 6 and 13
b
-
-
-
-
-
-
-
-
-
-
490
75
4.5
750
25
51
-
-
-
8.7
27
17
16
-
-
-
-
-
-
24
6.5
13
-
-
-
-
ns
nC
pF
pF
V
DD
= 250 V, I
D
= 5.0 A,
R
G
= 15
Ω,
R
D
= 50
Ω,
see fig. 10
b
-
-
-
-
-
-
-
-
-
-
-
410
1.4
5.0
A
20
1.5
620
2.1
V
ns
µC
G
S
T
J
= 25 °C, I
S
= 5.0 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 5.0 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80 % V
DS
.
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IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100.00
10
ID, Drain-to-Source Current (Α )
ID, Drain-to-Source Current (A)
10.00
T J = 150°C
1
1.00
0.1
4.5V
0.01
0.10
T J = 25°C
VDS = 100V
20μs PULSE WIDTH
4.0
6.0
8.0
10.0
12.0
14.0
16.0
20μs PULSE WIDTH
Tj = 25°C
0.001
0.1
1
10
100
0.01
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
ID, Drain-to-Source Current (A)
R
DS(on)
, Drain-to-Source On Resistance
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
3.0
I
D
= 5.0A
2.5
2.0
1
(Normalized)
1.5
4.5V
0.1
1.0
20μs PULSE WIDTH
Tj = 150°C
0.01
0.1
1
10
100
0.5
V
GS
= 10V
0.0
-60
-40
-20
0
20
40
60
80
100
120
140
160
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
T
J
, Junction Temperature
(
°
C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
10000
100
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
1000
C, Capacitance(pF)
Ciss
I
SD
, Reverse Drain Current (A)
10
100
Coss
T
J
= 150
°
C
1
T = 25
°
C
J
10
Crss
1
1
10
100
1000
V
GS
= 0 V
0.1
0.2
0.5
0.8
1.1
1.4
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
12
I
D
=
5.0A
100
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID , Drain-to-Source Current (A)
10
V
GS
, Gate-to-Source Voltage (V)
10
7
100μsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10
100
5
2
10msec
1000
10000
0
0
4
8
12
16
20
0.1
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
VDS , Drain-toSource Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
5.5
V
DS
V
GS
R
D
D.U.T.
+
-
V
DD
4.4
R
G
10
V
I
D
, Drain Current (A)
3.3
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
2.2
Fig. 10a - Switching Time Test Circuit
V
DS
1.1
90
%
0.0
25
50
75
100
125
150
T
C
, Case Temperature
( ° C)
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
10
Fig. 10b - Switching Time Waveforms
(Z
thJC
)
1
D = 0.50
Thermal Response
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t
1
/ t
2
+T
C
1
P
DM
t
1
t
2
J
= P
DM
x Z
thJC
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15
V
V
DS
t
p
V
DS
L
Driver
R
G
20
V
t
p
D.U.T
I
AS
0.01
Ω
+
A
-
V
DD
I
AS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
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