HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
无铅
Yes
欧盟RoHS规范
Yes
状态
ACTIVE
包装形状
RECTANGULAR
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
C BEND
端子涂层
NOT SPECIFIED
端子位置
DUAL
包装材料
PLASTIC/EPOXY
结构
SINGLE WITH BUILT-IN DIODE
壳体连接
DRAIN
元件数量
1
晶体管应用
SWITCHING
晶体管元件材料
SILICON
通道类型
N-CHANNEL
场效应晶体管技术
METAL-OXIDE SEMICONDUCTOR
操作模式
ENHANCEMENT
晶体管类型
GENERAL PURPOSE POWER
最大漏电流
40 A
额定雪崩能量
20 mJ
最大漏极导通电阻
0.0140 ohm
最大漏电流脉冲
80 A
文档预览
New Product
SiR878DP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
100
R
DS(on)
(Ω)
0.014 at V
GS
= 10 V
0.0148 at V
GS
= 7.5 V
0.019 at V
GS
= 4.5 V
PowerPAK SO-8
®
FEATURES
I
D
(A)
a
40
38
34
13.6 nC
Q
g
(Typ.)
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Primary Side Switch
• Telecom/Server 48 V, Full/Half-Bridge DC/DC
• Industrial
5.15 mm
S
2
3
4
D
8
7
6
5
D
D
D
S
G
6.15 mm
S
1
D
G
Bottom View
Ordering Information:
SiR878DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
d, e
Symbol
V
DS
V
GS
I
D
Limit
100
± 20
40
32
13.3
b, c
10.6
b, c
80
40
4.5
b, c
20
20
44.5
28.5
5
b, c
3.2
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
P
D
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
b, f
Maximum Junction-to-Ambient
°C/W
R
thJC
Maximum Junction-to-Case (Drain)
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 65939
S10-2685-Rev. B, 22-Nov-10
www.vishay.com
1
t
≤
10 s
Steady State
Symbol
R
thJA
Typical
20
2.1
Maximum
25
2.8
Unit
New Product
SiR878DP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 4 A
0.76
45
50
21
24
T
C
= 25 °C
40
80
1.1
90
100
A
V
ns
nC
ns
C
iss
C
oss
C
rss
V
DS
= 50 V, V
GS
= 10 V, I
D
= 10 A
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 5
Ω
I
D
≅
10 A, V
GEN
= 7.5 V, R
g
= 1
Ω
V
DD
= 50 V, R
L
= 5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
0.5
V
DS
= 50 V, V
GS
= 7.5 V, I
D
= 10 A
V
DS
= 50 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
1250
680
50
28.3
21.6
13.6
3.7
6.4
2.3
9
11
28
10
12
13
27
7
4.6
18
22
55
20
24
26
50
14
ns
Ω
43
33
20.5
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 7.5 V, I
D
= 12 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V, I
D
= 15 A
30
0.0114
0.0120
0.0152
34
0.014
0.0148
0.0190
S
Ω
1.2
100
50
- 5.5
2.8
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65939
S10-2685-Rev. B, 22-Nov-10
New Product
SiR878DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
V
GS
= 10 V thru 5 V
I
D
- Drain Current (A)
10
64
I
D
- Drain Current (A)
8
48
V
GS
= 4 V
6
32
4
T
C
= 25 °C
2
T
C
= 125 °C
16
V
GS
= 3 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
0
0
1
2
3
T
C
= - 55 °C
4
5
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.035
2200
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.028
1760
C - Capacitance (pF)
0.021
V
GS
= 4.5 V
0.014
V
GS
= 7.5 V
V
GS
= 10 V
0.007
1320
C
iss
880
C
oss
440
C
rss
0
0.000
0
16
32
48
I
D
- Drain Current (A)
64
80
0
20
40
60
80
V
DS
- Drain-to-Source Voltage (V)
100
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 10 A
Capacitance
2.0
I
D
= 15 A
1.7
V
GS
= 10 V
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 25 V
6
1.4
V
GS
= 4.5 V
1.1
V
DS
= 50 V
4
V
DS
= 75 V
2
0.8
0
0
6
12
18
24
Q
g
- Total Gate Charge (nC)
30
0.5
- 50
- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65939
S10-2685-Rev. B, 22-Nov-10
www.vishay.com
3
New Product
SiR878DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.080
I
D
= 15 A
1
T
J
= 150 °C
R
DS(on)
- On-Resistance (Ω)
10
0.064
I
S
- Source Current (A)
0.048
0.1
T
J
= 25 °C
0.032
T
J
= 125 °C
0.016
T
J
= 25 °C
0.01
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
1.2
0
1
2
3
4
5
6
7
8
V
GS
- Gate-to-Source Voltage (V)
9
10
Source-Drain Diode Forward Voltage
0.4
On-Resistance vs. Gate-to-Source Voltage
200
0.2
160
V
GS(th)
Variance (V)
0.0
- 0.2
I
D
= 5 mA
- 0.4
I
D
= 250 μA
- 0.6
Power (W)
120
80
40
- 0.8
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
1s
10 s
DC
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65939
S10-2685-Rev. B, 22-Nov-10
New Product
SiR878DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
45
36
I
D
- Drain Current (A)
27
18
9
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
Current Derating*
55
2.5
44
2.0
Power (W)
22
Power (W)
33
1.5
1.0
11
0.5
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
