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SIT3807AI-C3-33EE-25.000000Y

OSC MEMS 25.0000MHZ LVCMOS SMD

器件类别:无源元件   

厂商名称:SiTime

器件标准:

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器件参数
参数名称
属性值
类型
MEMS VCXO
频率
25MHz
功能
启用/禁用
输出
LVCMOS
电压 - 电源
3.3V
频率稳定度
±50ppm
工作温度
-40°C ~ 85°C
电流 - 电源(最大值)
33mA
安装类型
表面贴装
封装/外壳
6-SMD,无引线
大小/尺寸
0.197" 长 x 0.126" 宽(5.00mm x 3.20mm)
高度 - 安装(最大值)
0.032"(0.80mm)
电流 - 电源(禁用)(最大值)
70µA
文档预览
SiT3807
Standard Frequency MEMS VCXO
The Smart Timing Choice
The Smart Timing Choice
Features
Applications
30 standard frequencies between 1.544 MHz and 49.152 MHz
100% pin-to-pin drop-in replacement to quartz-based VCXO
Frequency stability as tight as ±25 ppm
Widest pull range options from ±25 ppm to ±200 ppm
Industrial or extended commercial temperature range
Superior pull range linearity of ≤1%, 10 times better than quartz
LVCMOS/LVTTL compatible output
Four industry-standard packages: 2.5 mm x2.0 mm (4-pin),
3.2 mm x 2.5mm (4-pin), 5.0 mm x 3.2 mm (6-pin), 7.0 mm x 5.0 mm
(6-pin)
Instant samples with
Time Machine II
and
field programmable
oscillators
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
Telecom clock synchronization, instrumentation
Low bandwidth analog PLL, jitter cleaner, clock recovery, audio
Video, 3G/HD-SDI, FPGA, broadband and networking
Electrical Specifications
Parameter
Output Frequency Range
Frequency Stability
Aging
Operating Temperature Range
Table 1. Electrical Characteristics
[1, 2, 3]
Symbol
f
F_stab
F_aging
T_use
Min.
1.544
-25
-50
-5
-20
-40
Supply Voltage
Vdd
1.71
2.25
2.52
2.97
Current Consumption
Standby Current
Idd
I_std
Pull
Range
[5, 6]
PR
VC_U
Typ.
1.8
2.5
2.8
3.3
31
29
Max.
49.152
+25
+50
+5
+70
+85
1.89
2.75
3.08
3.63
33
31
70
10
Unit
MHz
ppm
ppm
ppm
°C
°C
V
V
V
V
mA
mA
A
A
ppm
V
V
V
V
V
kΩ
pF
%
55
2
kHz
%
ns
Vdd
Contact SiTime for 16 kHz and other high bandwidth options
All Vdds. Refer to
Note 11
for definition of Duty Cycle
Vdd = 1.8V, 2.5v, 2.8V or 3.3V, 10% - 90% Vdd level
IOH = -7 mA (Vdd = 3.0V or 3.3V)
IOH = -4 mA (Vdd = 2.8V or 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 7 mA (Vdd = 3.0V or 3.3V)
IOL = 4 mA (Vdd = 2.8V or 2.5V)
IOL = 2 mA (Vdd = 1.8V)
(408) 328-4400
www.sitime.com
Revised January 8, 2015
No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V
No load condition, f = 20 MHz, Vdd = 1.8V
Vdd = 2.5V, 2.8V, 3.3V, ST = GND, output is Weakly Pulled Down
Vdd = 1.8V, ST = GND, output is Weakly Pulled Down
See the Absolute Pull Range and APR table on
page 10
Vdd = 1.8V, Voltage at which maximum deviation is guaranteed.
Vdd = 2.5V, Voltage at which maximum deviation is guaranteed.
Vdd = 2.8V, Voltage at which maximum deviation is guaranteed.
Vdd = 3.3V, Voltage at which maximum deviation is guaranteed.
Voltage at which minimum deviation is guaranteed.
Additional supply voltages between 2.5V and 3.3V can be
supported. Contact
SiTime
for additional information.
Condition
Refer to
Table 11
for the exact list of supported frequencies
Inclusive of Initial tolerance
[4]
at 25 °C, and variation over
temperature, rated supply voltage and load.
10 years, 25°C
Extended Commercial
Industrial
Frequency Range
Frequency Stability and Aging
Supply Voltage and Current Consumption
VCXO Characteristics
±25, ±50, ±100, ±150, ±200
1.7
2.4
2.7
3.2
Lower Control Voltage
Control Voltage Input Impedance
Control Voltage Input Capacitance
Linearity
Frequency Change Polarity
Control Voltage Bandwidth (-3dB)
Duty Cycle
Rise/Fall Time
Output High Voltage
VC_L
Z_in
C_in
Lin
V_BW
DC
Tr, Tf
VOH
45
90%
100
5
0.1
Positive slope
8
1.5
0.1
1
Upper Control Voltage
LVCMOS Output Characteristics
Output Low Voltage
VOL
10%
Vdd
SiTime Corporation
Rev. 1.01
990 Almanor Avenue, Sunnyvale, CA 94085
SiT3807
Standard Frequency MEMS VCXO
The Smart Timing Choice
The Smart Timing Choice
Table 1. Electrical Characteristics
[1, 2, 3]
Parameter
Input Pull-up Impedance
Input Capacitance
Startup Time
OE Enable/Disable Time
Resume Time
RMS Period Jitter
RMS Phase Jitter (random)
Symbol
Z_in
C_in
T_start
T_oe
T_resume
T_jitt
T_phj
Electrical Specifications
(continued)
Min.
Typ.
100
5
7
1.5
2
0.5
Max.
250
10
180
10
Jitter
2
3
1
ps
ps
ps
f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V
f = 20 MHz, Vdd = 1.8V
f = 20 MHz, Integration bandwidth = 12 kHz to 20 MHz, All Vdds
Unit
PF
ms
ns
ms
Condition
For the OE/ST pin for 6-pin devices
For the OE/ST pin for 6-pin devices
See Figure 7 for startup resume timing diagram
f = 40 MHz, all Vdds. For other freq, T_oe = 100 ns + 3 clock
periods
See Figure 8 for resume timing diagram
Input Characteristics
Startup and Resume Timing
Notes:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
2. The typical value of any parameter in the Electrical Characteristics table is specified for the nominal value of the highest voltage option for that parameter and at
25 °C temperature.
3. All max and min specifications are guaranteed across rated voltage variations and operating temperature ranges, unless specified otherwise
4. Initial tolerance is measured at Vin = Vdd/2
5. Absolute Pull Range (APR) is defined as the guaranteed pull range over temperature and voltage.
6. APR = pull range (PR) - frequency stability (F_stab) - Aging (F_aging)
Rev. 1.01
Page 2 of 11
www.sitime.com
SiT3807
Standard Frequency MEMS VCXO
The Smart Timing Choice
The Smart Timing Choice
Table 2. Pin Description. 4-Pin Configuration
(For 2.5 x 2.0 mm and 3.2 x 2.5 mm packages)
Pin
1
2
3
4
Symbol
VIN
GND
CLK
VDD
Input
Power
Power
Input
Power
Electrical ground
Power supply voltage
Oscillator output power
[7]
GND
2
3
Top View
Functionality
VIN
1
4
0-Vdd: produces voltage dependent frequency change
VDD
CLK
Note:
7. A capacitor value of 0.1 µF between VDD and GND is recommended.
Figure 1.
Table 3. Pin Description. 6-Pin Configuration
(For 5.0 x 3.2 mm and 7.0 x 5.0 mm packages)
Pin
1
Symbol
VIN
Input
No
Connect
2
NC/OE/ ST
Output
Enable
Standby
3
4
5
6
GND
CLK
NC
VDD
Power
Output
No
Connect
Power
Functionality
0-Vdd: produces voltage dependent frequency change
H or L or Open: No effect on output frequency or other device
functions
H or Open
[8]
: specified frequency output
L: output is high
H or Open
[8]
: specified frequency output
L: output is low (weak pull down)
[9]
. Oscillation stops
Electrical ground
Oscillator output
H or L or Open: No effect on output frequency or other device
functions
Power supply
voltage
[10]
VIN
NC/OE/ST
GND
1
6
Top View
VDD
NC
CLK
2
5
3
4
Figure 2.
Notes:
8. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 2 in the 6-pin package is not externally driven. If pin 2 needs to be left floating, use
the NC option
9. Typical value of the weak pull-down impedance is 5 mΩ
10. A capacitor value of 0.1 µF between VDD and GND is recommended.
Table 4. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of
the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
VDD
Electrostatic Discharge
Soldering Temperature (follow standard Pb free soldering guidelines)
Min.
-65
-0.5
Max.
150
4
2000
260
Unit
°C
V
V
°C
Table 5. Thermal Consideration
Parameter
7050
5032
3225
2520
JA, 4 Layer Board
(°C/W)
191
97
109
117
JA, 2 Layer Board
(°C/W)
263
199
212
222
JC, Bottom
(°C/W)
30
24
27
26
Table 6. Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Rev. 1.01
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Page 3 of 11
www.sitime.com
SiT3807
Standard Frequency MEMS VCXO
The Smart Timing Choice
The Smart Timing Choice
Phase Noise Plot
-100
-110
-120
-130
-140
-150
-160
-170
3
10
Integrated random phase jitter (RMS, 12kHz-5MHz): 0.52ps
Phase Noise (dBc/Hz)
10
4
10
Frequency Offset (Hz)
5
10
6
Figure 3. Phase Noise, 10 MHz, 3.3V, LVCMOS Output
Test Circuit and Waveform
Vdd
Vout
Test
Point
6
15pF
(including probe
and fixture
capacitance)
Power
Supply
0.1µF
5
Vout
Test
Point
4
Power
Supply
0.1µF
3
4
15pF
(including probe
and fixture
capacitance)
1
2
1
2
3
OE/ST Function
Vc
OE/ST Function
Vc
Vdd
Figure 4. Test Circuit (4-Pin Device)
Figure 5. Test Circuit (6-Pin Device)
tr
90% Vdd
50%
10% Vdd
High Pulse
(TH)
Period
tf
Low Pulse
(TL)
Figure 6. Waveform
Note:
11. Duty Cycle is computed as Duty Cycle = TH/Period.
12. SiT3807 supports the configurable duty cycle feature. For custom duty cycle at any given frequency, contact
SiTime.
Rev. 1.01
Page 4 of 11
www.sitime.com
SiT3807
Standard Frequency MEMS VCXO
The Smart Timing Choice
The Smart Timing Choice
Timing Diagram
Vdd
50% Vdd
Pin 4 Voltage
T_start
No Glitch
during start up
80% Vdd, 2.5/2.8/3.3V devices
80% Vdd, 1.8V devices
Vdd
ST Voltage
T_resume
CLK Output
CLK Output
T_start: Time to start from power-off
T_resume: Time to resume from ST
Figure 7. Startup Timing (OE/ST Mode)
u
Vdd
50% Vdd
OE Voltage
T_oe
Figure 8. Standby Resume Timing (ST Mode Only)
Vdd
OE Voltage
50% Vdd
T_oe
CLK Output
CLK Output
HZ
T_oe: Time to re-enable the clock output
T_oe: Time to put the output in High Z mode
Figure 9. OE Enable Timing (OE Mode Only)
Figure 10. OE Disable Timing (OE Mode Only)
Notes:
13. SiT3807 supports “no runt” pulses and “no glitch” output during startup or resume.
14. SiT3807 supports gated output which is accurate within rated frequency stability from the first cycle.
Rev. 1.01
Page 5 of 11
www.sitime.com
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