100% pin-to-pin drop-in replacement to quartz-based TCXO
■
Excellent total frequency stability as low as ±0.5 PPM
■
Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz)
■
Voltage control option with pull range of ±12.5 PPM
■
LVCMOS/HCMOS compatible output
■
Voltage control, standby, output enable or no connect modes
■
Three industry-standard 4-pin packages: 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm (For 6-pin, contact SiTime)
■
Outstanding silicon reliability of 2 FIT (10x improvement over quartz-based devices)
■
Ultra short lead time
■
Ideal for telecom, networking, smart meter, GPS and wireless applications
■
Specifications
Electrical Characteristics
Parameter
Output Frequency Range
Frequency Stability
Initial tolerance
Stability over temperature
Symbol
f
F_init
F_stab
Min.
1
-1
-0.5
-1
-1.5
-2.5
-5
Supply Voltage
Output Load
Aging
Operating Temperature Range
Supply Voltage
F_vdd
F_load
F_aging
T_use
Vdd
–
–
–1.0
-20
-40
1.71
2.25
2.52
2.70
2.97
10
–
–
–
–
45
–
90%
–
–
70%
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
50
0.1
–
–
–
1.8
2.5
2.8
3.0
3.3
±12.5, ±25, ±50
–
Positive slope
–
32
31
10
–
1.5
–
–
–
–
–
–
–
6
1.7
0.5
Max.
80
1
+0.5
+1
+1.5
+2.5
+5
–
–
1.0
+70
+85
1.89
2.75
3.08
3.3
3.63
90
8
TBD
TBD
TBD
55
–
–
10%
15
–
30%
10
TBD
TBD
–
–
PPB
PPM
PPM
°C
°C
V
V
V
V
V
PPM
%VDD
–
kHz
mA
mA
μA
%
ns
Vdd
Vdd
pF
Vdd
Vdd
ms
ms
ms
ps
ps
Unit
MHz
PPM
PPM
PPM
PPM
PPM
Condition
Refer to the freqeuncy list (back page) for available frequencies
at 25°C
Over operating temperature range at rated nominal power supply-
voltage (1.8V, 2.5V, 2.8V, 3.0V or 3.3V) and nominal load (15 pF).
±10% Vdd (±5% for Vdd = 1.8V)
±10% of
15 pF load
1st year, 25°C
Extended Commercial
Industrial
Pull Range
Control Voltage
Frequency Change Polarity
Control Voltage -3dB Bandwidth
Current Consumption
Standby Current
Duty Cycle
Rise/Fall Time
Output Voltage High
Output Voltage Low
Output Load
Input Voltage High
Input Voltage Low
Startup Time
OE Enable/Disable Time
Resume Time
RMS Period Jitter
RMS Phase Jitter (random)
PR
VC
–
V_BW
Idd
I_stby
DC
Tr, Tf
VOH
VOL
Load
VIH
VIL
T_start
T_oe
T_resume
T_jitt
T_phj
No load condition, f = 20 MHz, Vdd = 2.5 V, 2.8 V 3.0 V or 3.3 V
No load condition, f = 20 MHz, Vdd = 1.8 V
ST = GND, All Vdd, Weak internal pull down
All Vdds.
15 pF load, 10% - 90% Vdd
IOH = TBD mA
IOL = TBD mA
At maximum frequency and supply voltage. Contact SiTime for higher
output load option
Pin 1, OE or ST
Pin 1, OE or ST
Measured from the time Vdd reaches its rated minimum value
Measured from the time ST pin crosses 50% threshold
f = 10 MHz, all Vdds
f = 10 MHz, Integration bandwidth = 12 kHz to 20MHz,
All Vdds
SiTime Corporation
Rev. 0.51
990 Almanor Avenue
Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised August 18, 2011
SiT5000
Standard Frequency MEMS TCXO and VCTCXO
Advanced Information
■
Specifications (Cont.)
Pin Description Tables
Pin #1 Functionality
VIN
0 - Vdd: produces voltage dependent frequency change
OE
H or Open
[1]
: specified frequency output
L: output is high impedance
ST
H or Open
[1]
: specified frequency output
L: output is low level (weak pull down). Oscillation stops
NC
H or L or Open: No effect on device functions
Pin Map
Pin
1
2
3
4
Connection
OE/ST/NC/VC
GND
CLK
VDD
Absolute Maximum Ratings
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC
is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
VDD
Electrostatic Discharge (Human Body Model)
Soldering Temperature (follow standard Pb free soldering guidelines)
Number of Program Writes
Program Retention over -40 to 125°C, Process, VDD (0 to 3.65 V)
Min.
-65
-0.5
–
–
–
1,000+
Max.
150
4
2000
260
1
–
Unit
°C
V
V
°C
NA
years
Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level (MSL)
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Phase Noise Plot
P h a s e N o is e , 1 0 M H z c a r r ie r , 3 .3 V , L V C M O S o u tp u t, T C X O
-1 0 0
-1 1 0
-1 2 0
-1 3 0
-1 4 0
-1 5 0
-1 6 0
-1 7 0
3
10
In te g r a te d r a n d o m p h a s e jit te r ( R M S , 1 2 k H z - 5 M H z ) : 0 .5 2 p s
Phase Noise (dBc/Hz)
10
4
10
F r e q u e n c y O ffs e t ( H z )
5
10
6
Note:
1. In 1.8V mode, a resistor of <100 kΩ between OE pin and Vdd is required. For other supply voltage options, SiTime recommends using a similar pull-up resistor.
Rev. 0.51
Page 2 of 4
www.sitime.com
SiT5000
Standard Frequency MEMS TCXO and VCTCXO
Advanced Information
‘‘
■
Dimensions and Land Patterns
Package Size – Dimensions (Unit: mm)
[2]
3.2 x 2.5 x 0.75 mm
3.2 ± 0.15
#4
#3
#3
Recommended Land Pattern (Unit: mm)
[3]
2.1
#4
2.2
0.9
YXXXX
2.5 ± 0.15
0.75 ± 0.05
0.9
1.4
5.0 x 3.2 x 0.75 mm
5.0 ± 0.15
#4
#3
#3
2.39
#4
2.54
YXXXX
3.2 ± 0.15
0.8
0.75 ± 0.05
1.15
1.5
7.0 x 5.0 x 0.90 mm
7.0 ± 0.15
5.08
5.08
5.0 ± 0.15
2.6
YXXXX
1.1
3.81
0.90 ± 0.10
1.4
2.2
Notes:
2. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
3. A capacitor of value 0.1
μF
between Vdd and GND is recommended.
Rev. 0.51
Page 3 of 4
2.0
1.6
#1
#2
#2
#1
1.1
2.2
1.2
#1
#2
#2
#1
0.7
1.9
www.sitime.com
SiT5000
Standard Frequency MEMS TCXO and VCTCXO
Advanced Information
■
Part No. Guide
-
How to Order
SiT5000AC -2D-18VQ-1 9 .200000T
Packaging
Part Family
SiT5000
Revision Letter
“A” is the revision
Temperature Range
“C” Commercial, -20 to 70ºC
“I” Industrial, -40 to 85ºC
Output Waveform
“-“ Default
[4]
Package Size
“2” 3.2 x 2.5 mm
“3” 5.0 x 3.2 mm
“8” 7.0 x 5.0 mm
Frequency Stability
“K” for ±0.5 PPM
“A” for ±1.0 PPM
“B” for ±1.5 PPM
“D” for ±2.5 PPM
“E” for ±5 PPM
“T”: Tape & Reel, 3K reel
“Y”: Tape & Reel, 1K reel
Blank for Bulk
Frequency
See supported frequency list
“0” for fixed frequency
(Pin1 = “E”, “S” or “N” options)
Pull Range Options
(Pin1 = “V” option only)
“Q” for ±12.5 PPM
Feature Pin (pin 1)
“V” for Voltage Control
“E” for Output Enable
“S” for Standby
“N” for No Connect
Supply Voltage
“18” for 1.8 V ±5%
“25” for 2.5 V ±10%
“28” for 2.8 V ±10%
“30” for 3.0 V ±10%
“33” for 3.3 V ±10%
Supported Frequencies
10 MHz
16.3676 MHz
20.8 MHz
12 MHz
24 MHz
12.288 MHz
25 MHz
12.8 MHz
16.369 MHz
26 MHz
13 MHz
16.8 MHz
27.456 MHz
14.4 MHz
19.2 MHz
33.6 MHz
14.7456 MHz
19.44 MHz
38.4 MHz
16 MHz
19.68 MHz
40 MHz
16.357 MHz
20 MHz
16.367667 MHz 16.368 MHz
Notes:
4. Contact SiTime for SoftEdge
TM
output waveform that reduces EMI and is similar to clipped sinewave in functionality
Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii)
unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper
installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer:
SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any sitime product and any product documentation. products sold by
sitme are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or
at stake. all sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES
OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products
does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to
the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be
本文提出了一种基于MEMS的 LED芯片 封装技术，利用体硅工艺在硅基上形成的凹槽作为封装led芯片的反射腔。分析了反射腔对 LED 的发光强度和光束性能的影响，分析结果表明该反射腔可以提高芯片的发光效率和光束性能；讨论了反射腔的结构参数与芯片发光效率之间的关系。最后设计r封装的工艺流程。利用该封装结构可以降低芯片的封装尺，提高器件的发光效率和散热特性。 图1 LED T1或T1—3/4 ...[详细]
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