SIT5156AECFK425IM-19.123456X,SIT5156AECFK425IM-19.123456X pdf中文资料,SIT5156AECFK425IM-19.123456X引脚图,SIT5156AECFK425IM-19.123456X电路-Datasheet-电子工程世界

文档预览

SiT5156

Description

1 MHz to 60 MHz, ±0.5 to ±2.5 ppm, Elite Platform™ Super-TCXO

Features



The

SiT5156

is a ±0.5 ppm to ±2.5 ppm MEMS Super-

TCXO that is engineered for best dynamic performance. It

is ideal for high reliability telecom, wireless and networking,

industrial, precision GNSS and audio/video applications.

Leveraging SiTime’s unique DualMEMS™ temperature

sensing and TurboCompensation™ technologies, the

SiT5156 delivers the best dynamic performance for timing

stability in the presence of environmental stressors such as

air flow, temperature perturbation, vibration, shock, and

electromagnetic interference. This device also integrates

multiple on-chip regulators to filter power supply noise,

eliminating the need for a dedicated external LDO.

The SiT5156 offers three device configurations that can be

ordered using

Ordering Codes

for:



Any frequency from 1 MHz to 60 MHz in 1 Hz steps

Factory programmable options for short lead times

Best dynamic stability under airflow, thermal shock



±0.5 ppm stability across temperature



±15 ppb/

°C

typical

frequency slope (ΔF/ΔT)

-40°C to +105°C operating temperature

No activity dips or micro jumps

Resistant to shock, vibration and board bending

On-chip regulators eliminate the need for external LDOs

Digital frequency pulling (DCTCXO) via I



Digital control of output frequency and pull range



Up to

±3200

ppm pull range



Frequency pull resolution down to 5 ppt

2.5 V, 2.8 V, 3.0 V and 3.3 V supply voltage

LVCMOS or clipped sinewave output

RoHS and REACH compliant

Pb-free, Halogen-free, Antimony-free

Applications



The SiT5156 can be factory programmed for any

combination of frequency, stability, voltage, and pull range.

Programmability enables designers to optimize clock

configurations while eliminating long lead times and

customization costs associated with quartz devices where

each frequency is custom built.

Refer to

Manufacturing Guideline

for proper reflow profile

and PCB cleaning recommendations to ensure best

performance.



Precision GNSS systems

Microwave backhaul

Network routers and switches

Professional audio and video equipment

Storage and servers

Test and measurement

Block Diagram

5.0 mm x 3.2 mm Package Pinout

SDA / NC

OE / VC / NC

SCL / NC

GND

VDD

CLK

A0 / NC

Figure 1. SiT5156 Block Diagram

Figure 2. Pin Assignments (Top view)

(Refer to

Table 13

for Pin Descriptions)

Rev 1.06

May 23, 2020

www.sitime.com

SiT5156

1 MHz to 60 MHz, ±0.5 to ±2.5 ppm, Elite Platform™ Super-TCXO

Ordering Information

The part number guide illustrated below is for reference only, in which boxes identify order codes having more than one option.

To customize and build an exact part number, use the SiTime

Part Number Generator.

To validate the part number, use the

SiTime

Part Number Decoder.

Part

Family

Silicon

Revision

Letter

Package Size

"F": 5.0 mm x 3.2 mm

Pin 1 Function

–

TCXO mode only

"E": Output Enable

"N": No Connect

TCXO

VCTCXO

DCTCXO

Temperature Range

SiT5156AC - FK - 33 E 0 -

19.123456

SiT5156AC - FK - 33 V T -

19.123456

SiT5156AC - FKG33 J R -

19.123456

Packaging

"T": 12 mm Tape & Reel, 3 ku reel

"Y": 12 mm Tape & Reel, 1 ku reel

“X”: 12 mm Tape & Reel, 250 u reel

(blank): bulk

[2]

Frequency

1.000000 MHz to 60.000000 MHz

"I": Industrial, -40 to 85°C

"C": Extended Commercial, -20 to 70°C

"E": Extended Industrial, -40 to 105°C

Output Waveform

"-": LVCMOS

"C": Clipped Sinewave

[1]

Frequency Stability

"K": for

±0.5

ppm

"A": for

±1.0

ppm

"D": for

±2.5

ppm

Pull Range

–

DCTCXO mode only

"T":

±6.25

ppm

"R":

±10

ppm

"Q":

±12.5

ppm

"M":

±25

ppm

"B":

±50

ppm

"C":

±80

ppm

"E":

±100

ppm

"F":

±125

ppm

"G":

"H":

"X":

"L":

"Y":

"S":

"Z":

"U":

±150 ppm

±200 ppm

±400 ppm

±600 ppm

±800 ppm

±1200 ppm

±1600 ppm

±3200 ppm

C Address Mode

–

DCTCXO mode only

“0”, “1”, “2”, “3”, “4”, “5”, “6”, “7”, “8”, “9”, “A”, “B”,

“C”, “D”, “E”, “F”: Order code representing hex

value of I

C address. When the I

C address is

factory programmed using this code, pin A0 is no

connect (NC).

“G”: I

C pin addressable mode. Address is set by

the logic on A0 pin.

Pin 1 Function

–

DCTCXO mode only

"I": Output Enable

"J": No Connect, software OE control

Supply Voltage

"25": 2.5 V

10%

"28": 2.8 V

10%

"30": 3.0 V

10%

"33": 3.3 V

10%

Notes:

1. “-“ corresponds to the default rise/fall time for LVCMOS output as specified in

Table 1

(Electrical Characteristics). Contact

SiTime

for other rise/fall time

options for best EMI or driving multiple loads. For differential outputs, contact

SiTime.

2. Bulk is available for sampling only

Rev 1.06

Page 2 of 38

www.sitime.com

SiT5156

1 MHz to 60 MHz, ±0.5 to ±2.5 ppm, Elite Platform™ Super-TCXO

TABLE OF CONTENTS

Description ................................................................................................................................................................................... 1

Features....................................................................................................................................................................................... 1

Applications ................................................................................................................................................................................. 1

Block Diagram ............................................................................................................................................................................. 1

5.0 mm x 3.2 mm Package Pinout ............................................................................................................................................... 1

Ordering Information .................................................................................................................................................................... 2

Electrical Characteristics.............................................................................................................................................................. 4

Device Configurations and Pin-outs ............................................................................................................................................. 9

Pin-out Top Views................................................................................................................................................................. 9

Test Circuit Diagrams for LVCMOS and Clipped Sinewave Outputs ......................................................................................... 10

Waveforms................................................................................................................................................................................. 12

Timing Diagrams ........................................................................................................................................................................ 13

Typical Performance Plots ......................................................................................................................................................... 14

Architecture Overview ................................................................................................................................................................ 16

Frequency Stability ............................................................................................................................................................. 16

Output Frequency and Format............................................................................................................................................ 16

Output Frequency Tuning ................................................................................................................................................... 16

Pin 1 Configuration (OE, VC, or NC)

.................................................................................................................................. 17

Device Configurations ................................................................................................................................................................ 17

TCXO Configuration ........................................................................................................................................................... 17

VCTCXO Configuration ...................................................................................................................................................... 18

DCTCXO Configuration ...................................................................................................................................................... 19

VCTCXO-Specific Design Considerations ................................................................................................................................. 20

Linearity .............................................................................................................................................................................. 20

Control Voltage Bandwidth ................................................................................................................................................. 20

FV Characteristic Slope K

................................................................................................................................................. 20

Pull Range, Absolute Pull Range ........................................................................................................................................ 21

DCTCXO-Specific Design Considerations ................................................................................................................................. 22

Pull Range and Average Pull Range .................................................................................................................................. 22

Output Frequency ............................................................................................................................................................... 23

C Control Registers .......................................................................................................................................................... 25

Register Descriptions.......................................................................................................................................................... 25

............................................................ 25

OE Control, Digital Frequency Control Most Significant Word (MSW)

......................................... 26

[15]

....................................................................................... 27

Serial Interface Configuration Description .......................................................................................................................... 28

Serial Signal Format ........................................................................................................................................................... 28

Parallel Signal Format ........................................................................................................................................................ 29

Parallel Data Format ........................................................................................................................................................... 29

C Timing Specification ...................................................................................................................................................... 31

C Device Address Modes ................................................................................................................................................. 32

Schematic Example ............................................................................................................................................................ 33

Dimensions and Patterns ........................................................................................................................................................... 34

Layout Guidelines ...................................................................................................................................................................... 35

Manufacturing Guidelines .......................................................................................................................................................... 35

Additional Information ................................................................................................................................................................ 36

Revision History ......................................................................................................................................................................... 37

Rev 1.06

Page 3 of 38

www.sitime.com

SiT5156

1 MHz to 60 MHz, ±0.5 to ±2.5 ppm, Elite Platform™ Super-TCXO

Electrical Characteristics

All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise

stated. Typical values are at 25°C and 3.3 V Vdd.

Table 1. Output Characteristics

Parameters

Nominal Output Frequency Range

Operating Temperature Range

Symbol

F_nom

T_use

Min.

-20

-40

Frequency Stability over

Temperature

Initial Tolerance

Supply Voltage Sensitivity

F_stab

–

F_init

F_Vdd

–

Output Load Sensitivity

F_load

–

Frequency vs. Temperature Slope

ΔF/ΔT

–

Dynamic Frequency Change during

Temperature Ramp

One-Year Aging

20-Year Aging

F_dynamic

–

F_1y

F_20y

–

Typ.

–

±7.10

±11.83

±28.40

±0.81

±1.35

±3.24

±15

±25

±60

±0.13

±0.21

±0.50

±1

±2

Max.

+70

+85

+105

±0.5

±1.0

±2.5

±1

±16.25

±32.50

±65.0

±2.75

±5.50

±11.00

±25

±50

±100

±0.21

±0.42

±0.83

–

Unit

MHz

°C

ppm

ppb

ppb/°C

ppb/s

ppm

Initial frequency at 25°C at 48 hours after 2 reflows

±0.5 ppm F_stab, Vdd ±5%

±1.0ppm F_stab, Vdd ±5%

±2.5 ppm F_stab, Vdd ±5%

±0.5 ppm F_stab. LVCMOS output, 15 pF ±10%. Clipped

sinewave output, 10

kΩ

|| 10 pF ±10%

±1.0 ppm F_stab. LVCMOS output, 15 pF ±10%. Clipped

sinewave output, 10

kΩ

|| 10 pF ±10%

±2.5 ppm F_stab. LVCMOS output, 15 pF ±10%. Clipped

sinewave output, 10

kΩ

|| 10 pF ±10%

±0.5 ppm F_stab, 0.5°C/min ramp rate, -40 to 105°C

±1.0 ppm F_stab, 0.5°C/min ramp rate, -40 to 105°C

±2.5 ppm F_stab, 0.5°C/min ramp rate, -40 to 105°C

±0.5 ppm F_stab, 0.5°C/min ramp rate, -40 to 105°C

±1.0 ppm F_stab, 0.5°C/min ramp rate, -40 to 105°C

±2.5 ppm F_stab, 0.5°C/min ramp rate, -40 to 105°C

At 25°C, after 2-days of continued operation. Aging is

measured with respect to day 3

At 25°C, after 2-days of continued operation. Aging is

measured with respect to day 3

Extended Commercial, ambient temperature

Industrial, ambient temperature

Extended Industrial, ambient temperature

Referenced to (max frequency + min frequency)/2 over the

rated temperature range. Vc=Vdd/2 for VCTCXO

Condition

Frequency Coverage

Temperature Range

Frequency Stability

LVCMOS Output Characteristics

Duty Cycle

Rise/Fall Time

Output Voltage High

Output Voltage Low

Output Impedance

Tr, Tf

VOH

VOL

Z_out_c

0.8

90%

–

Output Voltage Swing

Rise/Fall Time

Start-up Time

V_out

Tr, Tf

T_start

0.8

–

1.2

–

3.5

2.5

1.9

–

10%

–

1.2

4.6

3.5

Vdd

Ohms

10% - 90% Vdd

IOH = +3 mA

IOL = -3 mA

Impedance looking into output buffer, Vdd = 3.3 V

Impedance looking into output buffer, Vdd = 3.0 V

Impedance looking into output buffer, Vdd = 2.8 V

Impedance looking into output buffer, Vdd = 2.5 V

Clipped sinewave output, 10

kΩ

|| 10 pF ±10%

20% - 80% Vdd, F = 19.2 MHz

Time to first pulse, measured from the time Vdd reaches

90% of its final value. Vdd ramp time = 100 µs from 0V to

Vdd

F_nom = 10 MHz. See

Timing Diagrams

section below.

Time to first accurate pulse within rated stability, measured

from the time Vdd reaches 90% of its final value. Vdd

ramp time = 100 µs

Clipped Sinewave Output Characteristics

Start-up Characteristics

Output Enable Time

Time to Rated Frequency Stability

T_oe

T_stability

–

680

Rev 1.06

Page 4 of 38

www.sitime.com

SiT5156

1 MHz to 60 MHz, ±0.5 to ±2.5 ppm, Elite Platform™ Super-TCXO

Table 2. DC Characteristics

Parameters

Supply Voltage

Symbol

Vdd

Min.

2.25

2.52

2.7

2.97

Current Consumption

OE Disable Current

Idd

I_od

–

Typ.

2.5

2.8

3.0

3.3

Max.

2.75

3.08

3.3

3.63

Unit

F_nom = 19.2 MHz, No Load, TCXO and DCTCXO modes

F_nom = 19.2 MHz, No Load, VCTCXO mode

OE = GND, output weakly pulled down. TCXO, DCTCXO

OE = GND, output weakly pulled down. VCTCXO mode

Condition

Contact

SiTime

for 2.25 V to 3.63 V continuous supply

voltage support

Supply Voltage

Current Consumption

Table 3. Input Characteristics

Parameters

Input Impedance

Input High Voltage

Input Low Voltage

Symbol

Z_in

VIH

VIL

Min.

70%

–

±6.25

±10

±12.5

±25

±50

±80

±100

±125

±150

±200

±400

±600

±800

±1200

±1600

±3200

±2.75

±2.25

±0.75

Upper Control Voltage

Lower Control Voltage

Control Voltage Input Impedance

Control Voltage Input Bandwidth

Frequency Control Polarity

Pull Range Linearity

Bus Speed

Input Voltage Low

Input Voltage High

Output Voltage Low

Input Leakage current

Input Capacitance

VC_U

VC_L

VC_z

VC_bw

F_pol

PR_lin

F_I2C

VIL_I2C

VIH_I2C

VOL_I2C

–

70%

–

0.5

–

90%

–

Typ.

–

Max.

–

30%

–

Unit

kΩ

Vdd

ppm

VCTCXO mode; contact

SiTime

for ±12.5 and ±25 ppm

Internal pull up to Vdd

Condition

Input Characteristics

–

OE Pin

Frequency Tuning Range – Voltage Control or I

C mode

Pull Range

–

ppm

DCTCXO mode

Absolute Pull Range

[3]

APR

–

Positive

0.5

≤

400

≤ 1000

–

10%

–

1.0

ppm

Vdd

MΩ

kHz

±0.5 ppm F_stab, DCTCXO, VCTCXO for PR = ±6.25 ppm

±1.0 ppm F_stab, DCTCXO, VCTCXO for PR = ±6.25 ppm

±2.5 ppm F_stab, DCTCXO, VCTCXO for PR = ±6.25 ppm

VCTCXO mode

VCTCXO mode; contact

SiTime

for other bandwidth options

VCTCXO mode

-40 to 105°C

-40 to 85°C

DCTCXO mode

0.1 V

< VOUT < 0.9 V

DD.

Includes typical leakage current

from 200 kΩ pull resister to VDD. DCTCXO mode

DCTCXO mode

C Interface Characteristics, 200 Ohm, 550 pF (Max I

C Bus Load)

30%

–

0.4

Vdd

µA

Note:

3. APR = PR – initial tolerance – 20-year aging – frequency stability over temperature. Refer to

Table 17

for APR with respect to other pull range options.

Rev 1.06

Page 5 of 38

www.sitime.com