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SIT8924BIE21-18S-110.000000E

LVCMOS Output Clock Oscillator,

器件类别:无源元件    振荡器   

厂商名称:SiTime

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
Objectid
7254195190
包装说明
DILCC4,.1,83
Reach Compliance Code
compliant
其他特性
STANDBY; ENABLE/DISABLE FUNCTION; ALSO COMPATIBLE WITH LVTTL O/P
最长下降时间
2.5 ns
频率调整-机械
NO
频率稳定性
20%
JESD-609代码
e4
安装特点
SURFACE MOUNT
端子数量
4
标称工作频率
110 MHz
最高工作温度
85 °C
最低工作温度
-40 °C
振荡器类型
LVCMOS
输出负载
15 pF
最大输出低电流
2 mA
封装主体材料
PLASTIC/EPOXY
封装等效代码
DILCC4,.1,83
物理尺寸
3.2mm x 2.5mm x 0.8mm
最长上升时间
2.5 ns
筛选级别
AEC-Q100
最大供电电压
1.98 V
最小供电电压
1.62 V
标称供电电压
1.8 V
表面贴装
YES
最大对称度
55/45 %
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
文档预览
SiT8924B
Automotive AEC-Q100 Oscillator
Features
Applications
AEC-Q100 with extended temperature range (-55°C to 125°C)
Frequencies between 1 MHz and 110 MHz accurate to
6 decimal places
Supply voltage of 1.8V or 2.25V to 3.63V
Excellent total frequency stability as low as ±20 ppm
Industry best G-sensitivity of 0.1 PPB/G
Low power consumption of 3.8 mA typical at 1.8V
Standby mode for longer battery life
LVCMOS/LVTTL compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,
5.0 x 3.2, 7.0 x 5.0 mm x mm
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
Automotive, extreme temperature and other high-rel
electronics
Infotainment systems, collision detection devices, and
in-vehicle networking
Powertrain control
Electrical Characteristics
Table 1. Electrical Characteristics
[1,2]
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated.
Typical values are at 25°C and nominal supply voltage.
Parameters
Output Frequency Range
Frequency Stability
Symbol
f
F_stab
Min.
1
-20
-25
-30
-50
Operating Temperature
Range (ambient)
T_use
-40
-40
-40
-55
Supply Voltage
Current Consumption
OE Disable Current
Standby Current
Vdd
Idd
I_od
I_std
1.62
2.25
Duty Cycle
Rise/Fall Time
DC
Tr, Tf
VOH
90%
Output Low Voltage
VOL
10%
Vdd
Vdd
45
Typ.
1.8
4.0
3.8
2.6
1.4
0.6
1.5
1.3
Max.
110
+20
+25
+30
+50
+85
+105
+125
+125
1.98
3.63
4.8
4.5
4.5
4.3
55
3
2.5
Unit
MHz
ppm
ppm
ppm
ppm
°C
°C
°C
°C
V
V
mA
mA
mA
mA
µA
µA
µA
%
ns
ns
AEC-Q100 Grade 3
AEC-Q100 Grade 2
AEC-Q100 Grade 1
Extended cold AEC-Q100 Grade1
All voltages between 2.25V and 3.63V including 2.5V, 2.8V, 3.0V
and 3.3V are supported
No load condition, f = 20 MHz, Vdd = 2.25V to 3.63V
No load condition, f = 20 MHz, Vdd = 1.8V
Vdd = 2.5V to 3.3V, OE = Low, Output in high Z state
Vdd = 1.8V, OE = Low, Output in high Z state
Vdd = 2.8V to 3.3V,
ST
= Low, Output is weakly pulled down
Vdd = 2.5V,
ST
= Low, Output is weakly pulled down
Vdd = 1.8V,
ST
= Low, Output is weakly pulled down
All Vdd levels
Vdd = 2.25V - 3.63V, 20% - 80%
Vdd = 1.8V, 20% - 80%
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Condition
Refer to
Table 13 to 15
for a list supported frequencies
Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C,
and variations over operating temperature, rated power
supply voltage and load (15 pF ± 10%)
Frequency Range
Frequency Stability and Aging
Operating Temperature Range
Supply Voltage and Current Consumption
LVCMOS Output Characteristics
Output High Voltage
Rev 1.7
May 22, 2019
www.sitime.com
SiT8924B
Automotive AEC-Q100 Oscillator
Table 1. Electrical Characteristics
[1,2]
(continued)
Parameters
Input High Voltage
Input Low Voltage
Input Pull-up Impedance
Symbol
VIH
VIL
Z_in
Min.
70%
2
Typ.
100
Max.
30%
Unit
Vdd
Vdd
kΩ
MΩ
Condition
Input Characteristics
Pin 1, OE or
ST
Pin 1, OE or
ST
Pin 1, OE logic high or logic low, or
ST
logic high
Pin 1,
ST
logic low
Startup and Resume Timing
Startup Time
Enable/Disable Time
Resume Time
T_start
T_oe
T_resume
5.5
130
5
Jitter
RMS Period Jitter
T_jitt
RMS Phase Jitter (random)
T_phj
1.6
1.9
0.5
1.3
2.5
3.0
ps
ps
ps
ps
f = 75 MHz, 2.25V to 3.63V
f = 75 MHz, 1.8V
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz
ms
ns
ms
Measured from the time Vdd reaches its rated minimum value
f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
Measured from the time
ST
pin crosses 50% threshold
Notes:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
2. The typical value of any parameter in the Electrical Characteristic table is specified for the nominal value of the highest voltage option for that parameter and
at 25°C temperature.
Table 2. Pin Description
Pin
Symbol
Output Enable
1
Standby
No Connect
2
3
4
Notes:
3. In OE or
ST
mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.
4. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
GND
OUT
VDD
Power
Output
Power
Functionality
H
[3]
: specified frequency output
L: output is high impedance. Only output driver is disabled.
H
[3]
: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode.
Supply current reduces to I_std.
Any voltage between 0 and Vdd or Open
[3]
: Specified frequency
output. Pin 1 has no function.
Electrical ground
[4]
Oscillator output
Power supply voltage
[4]
Top View
OE/ST/NC
1
4
VDD
OE/
ST
/NC
GND
2
3
OUT
Figure 1. Pin Assignments
Rev 1.7
Page 2 of 19
www.sitime.com
SiT8924B
Automotive AEC-Q100 Oscillator
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
Vdd
Electrostatic Discharge
Soldering Temperature (follow standard Pb free soldering guidelines)
Junction Temperature
[5]
Min.
-65
-0.5
Max.
150
4
2000
260
150
Unit
°C
V
V
°C
°C
Note:
5. Exceeding this temperature for extended period of time may damage the device.
Table 4. Thermal Consideration
[6]
Package
7050
5032
3225
2520
2016
θ
JA, 4 Layer Board
(°C/W)
142
97
109
117
152
θ
JA, 2 Layer Board
(°C/W)
273
199
212
222
252
θ
JC, Bottom
(°C/W)
30
24
27
26
36
Note:
6. Refer to JESD51 for
θJA
and
θJC
definitions, and reference layout used to determine the
θJA
and
θJC
values in the above table.
Table 5. Maximum Operating Junction Temperature
[7]
Max Operating Temperature (ambient)
85°C
105°C
125°C
Maximum Operating Junction Temperature
95°C
115°C
135°C
Note:
7. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 6. Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Rev 1.7
Page 3 of 19
www.sitime.com
SiT8924B
Automotive AEC-Q100 Oscillator
Test Circuit and Waveform
Vdd
Vout
Test
Point
tr
4
Power
Supply
0.1µF
3
tf
80% Vdd
1
2
15pF
(including probe
and fixture
capacitance)
50%
20% Vdd
High Pulse
(TH)
Period
Low Pulse
(TL)
Vdd
OE/NC Function
1k
Figure 2. Test Circuit
[8]
Note:
8. Duty Cycle is computed as Duty Cycle = TH/Period.
Figure 3. Waveform
[8]
Timing Diagrams
90% Vdd
Vdd
Vdd
50% Vdd
Pin 4 Voltage
T_start
No Glitch
during start up
ST Voltage
T_resume
CLK Output
HZ
CLK Output
HZ
T_start: Time to start from power-off
T_resume: Time to resume from ST
Figure 4. Startup Timing (OE/ ST Mode)
[9]
Vdd
50% Vdd
T_oe
OE Voltage
Figure 5. Standby Resume Timing ( ST Mode Only)
Vdd
OE Voltage
50% Vdd
T_oe
CLK Output
HZ
CLK Output
HZ
T_oe: Time to re-enable the clock output
T_oe: Time to put the output in High Z mode
Figure 6. OE Enable Timing (OE Mode Only)
Note:
9. SiT8924 has “no runt” pulses and “no glitch” output during startup or resume.
Figure 7. OE Disable Timing (OE Mode Only)
Rev 1.7
Page 4 of 19
www.sitime.com
SiT8924B
Automotive AEC-Q100 Oscillator
Performance Plots
[10]
1.8 V
6.0
2.5 V
2.8 V
3V
3.3 V
DUT1
DUT8
DUT15
25
20
DUT2
DUT9
DUT16
DUT3
DUT10
DUT17
DUT4
DUT11
DUT18
DUT5
DUT12
DUT19
DUT6
DUT13
DUT20
DUT7
DUT14
5.5
Frequency (ppm)
0
20
40
60
80
100
5.0
15
10
5
0
-5
-10
-15
-20
Idd (mA)
4.5
4.0
3.5
3.0
-25
-55
-35
-15
5
25
45
65
85
105
125
Frequency (MHz)
Temperature (°C)
Figure 8. Idd vs Frequency
Figure 9. Frequency vs Temperature
1.8 V
4.0
3.5
2.5 V
2.8 V
3.0 V
3.3 V
55
54
53
1.8 V
2.5 V
2.8 V
3.0 V
3.3 V
RMS period jitter (ps)
3.0
2.5
2.0
1.5
1.0
0.5
46
Duty cycle (%)
0
20
40
60
80
100
52
51
50
49
48
47
0.0
45
0
20
40
60
80
100
Frequency (MHz)
Frequency (MHz)
Figure 10. RMS Period Jitter vs Frequency
Figure 11. Duty Cycle vs Frequency
1.8 V
2.5
2.5 V
2.8 V
3.0 V
3.3 V
2.5
1.8 V
2.5 V
2.8 V
3.0 V
3.3 V
2.0
2.0
Rise time (ns)
Fall time (ns)
1.5
1.5
1.0
1.0
0.5
0.5
0.0
-40
-20
0
20
40
60
80
100
120
0.0
-40
-20
0
20
40
60
80
100
120
Temperature (°C)
Temperature (°C)
Figure 12. 20%-80% Rise Time vs Temperature
Figure 13. 20%-80% Fall Time vs Temperature
Rev 1.7
Page 5 of 19
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