SiT9045
PRELIMINARY
1 to 150 MHz, Endura™ Series EMI Reduction Oscillator
Features
Applications
Best acceleration sensitivity of 0.1 ppb/g
Spread spectrum for EMI reduction
Wide spread % option
Center spread: from ±0.125% to ±2%, ±0.125% step size
Down spread: -0.25% to -4% with -0.25% step size
Spread profile option: Triangular, Hershey-kiss, Random
Programmable rise/fall time for EMI reduction: 8 options,
0.25 to 40 ns
Extended temperature range (-55°C to 125°C)
Any frequency between 1 MHz and 150 MHz accurate to
6 decimal places
Pin1 modes: Standby, output enable, or spread disable
LVCMOS output
AEC-Q100 qualified
Industry-standard packages
QFN: 2.0 x 1.6 mm
2
, 2.5 x 2.0 mm
2
, 3.2 x 2.5 mm
2
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
Contact SiTime
for up-screening and LAT programs
Avionics systems
Field communication systems
Telemetry applications
Electrical Specifications
Table 1. Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and 3.3V supply voltage.
Parameters
Output Frequency Range
[1]
Symbol
f
Min.
1
Typ.
–
–
Max.
150
Unit
MHz
Condition
Frequency Range
Frequency Stability and Aging
Frequency Stability
F_stab
-50
+50
ppm
Inclusive of initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply voltage.
Spread = Off.
AEC-Q100 Grade 3
AEC-Q100 Grade 2
AEC-Q100 Grade 1
Extended cold AEC-Q100 Grade 1
Operating Temperature Range
Operating Temperature
Range
T_use
-40
-40
-40
-55
–
–
–
–
+85
+105
+125
+125
°C
°C
°C
°C
Rugged Characteristics
Acceleration (g) sensitivity,
Gamma Vector
F_g
–
–
0.1
ppb/g
Low sensitivity grade; total gamma over 3 axes; 15 Hz to 2 kHz; MIL-
PRF-55310, computed per section 4.8.18.3.1
Rev 0.5
July 22, 2019
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SiT9045
1 to 150 MHz, Endura™ Series EMI Reduction Oscillator
Table 1. Electrical Characteristics
(continued)
Parameters
Supply Voltage
Symbol
Vdd
Min.
1.62
2.25
2.52
2.7
2.97
2.25
Current Consumption
OE Disable Current
Standby Current
Idd
I_OD
I_std
–
–
–
–
–
Typ.
1.8
2.5
2.8
3.0
3.3
–
7.9
6.6
5.3
5.0
2.6
–
–
1.2
–
Max.
1.98
2.75
3.08
3.3
3.63
3.63
9.5
8.0
6.5
6.0
9.0
Unit
V
V
V
V
V
V
mA
mA
mA
mA
A
PRELIMINARY
Condition
Supply Voltage and Current Consumption
No load condition, f = 148.5 MHz, Vdd = 2.5V to 3.3V
No load condition, f = 148.5 MHz, Vdd = 1.8V
f = 148.5 MHz, Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state
f = 148.5 MHz, Vdd = 1.8V, OE = GND, Output in high-Z state
ST
= GND, Vdd = 2.5V to 3.3V, Output is weakly pulled down
LVCMOS Output Characteristics
Duty Cycle
Rise/Fall Time
Output High Voltage
DC
Tr, Tf
VOH
45
43
–
90%
55
57
2.0
–
%
%
ns
Vdd
f = 1 to 137 MHz
f = 137.000001 to 150 MHz
20% - 80%, default derive strength
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Output Low Voltage
VOL
–
–
10%
Vdd
Input Characteristics
Input High Voltage
Input Low Voltage
Input Leakage Current
VIH
VIL
IL
70%
–
–
–
–
–
Startup Time
Enable/Disable Time
Resume Time
Spread Enable Time
Spread Disable Time
Cycle-to-cycle jitter
T_start
T_oe
T_resume
T_sde
T_sdde
T_ccj
–
–
–
–
–
–
–
Note:
1.
Contact SiTime
for ±20/25 ppm options.
–
–
-2.3
2.8
-24.6
3.2
–
–
–
–
–
10.5
10.8
–
30%
–
–
–
–
10
215
10
4
55
–
–
Vdd
Vdd
µA
µA
µA
µA
ms
ns
ms
µs
µs
Jitter
ps
ps
f = 148.5 MHz, Vdd = 2.5 to 3.3V, Spread = ON (or OFF)
f = 148.5 MHz, Vdd = 1.8V, Spread = ON (or OFF)
Pin 1, OE or
ST
Pin 1, OE or
ST
Pin1,
ST
logic low
Pin1,
ST
logic high
Pin1, OE / SD logic low
Pin1, OE / SD logic high
Measured from the time Vdd reaches its rated minimum value
f = 148.5 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
Measured from the time ST pin crosses 50% threshold
Measured from the time SD pin crosses 50% threshold
Measured from the time SD pin crosses 50% threshold
Startup and Resume Timing
Rev 0.5
Page 2 of 14
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SiT9045
1 to 150 MHz, Endura™ Series EMI Reduction Oscillator
Table 2. Spread Spectrum %
Ordering
Code
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Center Spread
(%)
±0.125
±0.250
±0.390
±0.515
±0.640
±0.765
±0.905
±1.030
±1.155
±1.280
±1.420
±1.545
±1.670
±1.795
±1.935
±2.060
Down Spread
(%)
-0.25
-0.50
-0.78
-1.04
-1.29
-1.55
-1.84
-2.10
-2.36
-2.62
-2.91
-3.18
-3.45
-3.71
-4.01
-4.28
PRELIMINARY
Table 3. Spread Profile
[2]
Spread Profile
Triangular
Hershey-kiss
Random
Note:
2. In both Triangular and Hershey-kiss profiles, modulation rate is
employed with a frequency of ~31.25 kHz. In random profile, modulation
rate is ~ 8.6 kHz.
Table 4. Pin Description
Pin
1
Symbol
OE /
ST
/
NC/ SD
Output
Enable
Standby
[3]
Functionality
H : specified frequency output
L: output is high impedance. Only output driver is disabled.
H : specified frequency output
L: output is low (week pull down). Device goes to sleep mode.
Supply current reduced to I_std.
Pin1 has no function (Any voltage between 0 and Vdd or Open)
H: Spread = ON
L: Spread = OFF
Electrical ground
Oscillator output
Power supply voltage
[4]
[3]
Top View
OE /
/
NC / SD
1
4
VDD
No Connect
Spread
Disable
2
3
4
Notes:
GND
OUT
VDD
Power
Output
Power
GND
2
3
OUT
Figure 1. Pin Assignments
3. In OE or
ST
mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.
4. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Table 5. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of
the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
Vdd
Electrostatic Discharge
Soldering Temperature (follow standard Pb free soldering guidelines)
Junction Temperature
[5]
Min.
-65
-0.5
–
–
–
Max.
150
4
2000
260
150
Unit
°C
V
V
°C
°C
Note:
5. Exceeding this temperature for extended period of time may damage the device.
Rev 0.5
Page 3 of 14
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SiT9045
1 to 150 MHz, Endura™ Series EMI Reduction Oscillator
Table 6. Maximum Operating Junction Temperature
[6]
Max Operating Temperature (ambient)
85°C
105°C
125°C
PRELIMINARY
Maximum Operating Junction Temperature
95°C
115°C
135°C
Note:
6. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 7. Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Rev 0.5
Page 4 of 14
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SiT9045
1 to 150 MHz, Endura™ Series EMI Reduction Oscillator
Timing Diagrams
Vdd
PRELIMINARY
90% Vdd
Vdd
50% Vdd
T_resume
Pin 4 Voltage
T_start
No Glitch
during start up
[7]
ST Voltage
CLK Output
HZ
T_start: Time to start from power-off
CLK Output
HZ
T_resume: Time to resume from ST
Figure 2. Startup Timing
Figure 3. Standby Resume Timing (ST Mode Only)
Vdd
50% Vdd
OE Voltage
T_oe
Vdd
OE Voltage
50% Vdd
T_oe
CLK Output
HZ
T_oe: Time to re-enable the clock output
CLK Output
HZ
T_oe: Time to put the output in High Z mode
Figure 4. OE Enable Timing (OE Mode Only)
Figure 5. OE Disable Timing (OE Mode Only)
Vdd
50% Vdd
SD Voltage
T_sde
SD Voltage
Vdd
50% Vdd
Frequency
Deviation (%)
T_sdde
Modulation period = 32µs (31.25kHz)
Time (s)
Frequency
Deviation (%)
Time (s)
Figure 6. SD Enable Timing (SD Mode Only)
Note:
7. SiT9045 has “no runt” pulses and “no glitch” output during startup or resume.
Figure 7. SD Diable Timing (SD Mode Only)
Rev 0.5
Page 5 of 14
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模拟与混合信号
