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SKCD61C120I3

CAL-DIODE

器件类别:分立半导体    二极管   

厂商名称:SEMIKRON

厂商官网:http://www.semikron.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
SEMIKRON
零件包装代码
DIE
包装说明
S-XUUC-N1
针数
1
Reach Compliance Code
compli
ECCN代码
EAR99
其他特性
FREEWHEELING DIODE
应用
SOFT RECOVERY
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
2.3 V
JESD-30 代码
S-XUUC-N1
JESD-609代码
e3/e4
最大非重复峰值正向电流
720 A
元件数量
1
相数
1
端子数量
1
最高工作温度
150 °C
最低工作温度
-40 °C
最大输出电流
60 A
封装主体材料
UNSPECIFIED
封装形状
SQUARE
封装形式
UNCASED CHIP
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
1200 V
表面贴装
YES
端子面层
TIN/SILVER
端子形式
NO LEAD
端子位置
UPPER
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
SKCD 61 C 120 I3
Absolute Maximum Ratings
Symbol
V
RRM
I
F(AV)
I
FSM
T
jmax
Conditions
T
j
= 25 °C, I
R
= 0.2 mA
T
s
= 80 °C, T
j
= 150 °C
10 ms
sin 180°
T
j
= 25 °C
T
j
= 150 °C
Values
1200
60
900
720
150
Unit
V
A
A
A
°C
CAL-DIODE
I
F
= 75 A
V
RRM
= 1200 V
Size: 7,8 mm x 7,8 mm
SKCD 61 C 120 I3
Electrical Characteristics
Symbol
i
2
t
I
R
V
F
V
(TO)
r
T
Conditions
T
j
= 150 °C, 10 ms, sin 180°
T
j
= 25 °C, V
RRM
= 1200 V
T
j
= 125 °C, V
RRM
= 1200 V
T
j
= 25 °C, I
F
= 70 A
T
j
= 125 °C, I
F
= 70 A
T
j
= 125 °C
T
j
= 125 °C
min.
typ.
max.
2592
0.20
6.00
Unit
A
2
s
mA
mA
V
V
V
mΩ
2.00
1.79
1.18
8.1
2.50
2.30
Features
• low forward voltage drop combined
with a low temperature dependence
• easy paralleling due to a small forward
voltage spread
• very soft recovery behavior
• small switching losses
• high ruggedness
• compatible to thick wire bonding
• compatible to all standard solder
processes
Dynamic Characteristics
Symbol
t
rr
t
rr
Q
rr
Q
rr
I
rrm
I
rrm
Conditions
T
j
= 25 °C, 75 A, 600 V, 800 A/µs
T
j
= 125 °C, 75 A, 600 V, 800 A/µs
T
j
= 25 °C, 75 A, 600 V, 800 A/µs
T
j
= 125 °C, 75 A, 600 V, 800 A/µs
T
j
= 25 °C, 75 A, 600 V, 800 A/µs
T
j
= 125 °C, 75 A, 600 V, 800 A/µs
min.
typ.
max.
Unit
µs
ns
3
11
45
µC
µC
A
A
Typical Applications*
• freewheeling diode for IGBT
• particularly suitable for frequencies
>
8
kHz
Thermal Characteristics
Symbol
T
j
T
stg
T
solder
T
solder
R
th(j-s)
10 min.
5 min.
sold. on 0,38 mm DCB, reference point
on copper heatsink close to the chip
0.54
Conditions
min.
-40
-40
typ.
max.
150
150
250
320
Unit
°C
°C
°C
°C
K/W
Mechanical Characteristics
Symbol
Raster
size
Area total
Anode
Cathode
Wire bond
Package
Chips /
Package
Conditions
Values
7.8 x 7.8
60.84
bondable (Al)
solderable (Ag/Ni)
Al, diameter
500 µm
wafer frame
156 (5" Wafer)
Unit
mm
2
mm
2
pcs
SKCD
© by SEMIKRON
Rev. 0 – 18.02.2010
1
SKCD 61 C 120 I3
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
2
Rev. 0 – 18.02.2010
© by SEMIKRON
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参数对比
与SKCD61C120I3相近的元器件有:SKCD61C120I3_10。描述及对比如下:
型号 SKCD61C120I3 SKCD61C120I3_10
描述 CAL-DIODE CAL-DIODE
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