LDMOS transistor die, designed for operation from 10 to 2700MHz. It
is an excellent solution for applications requiring high linearity and effi-
ciency. The SLD2000 is typically used as a driver or output stage for
power amplifier, or transmitter applications. These robust power tran-
sistors are fabricated using Sirenza’s high performance XEMOS II
TM
process.
SLD-2000
12 Watt Discrete LDMOS FET -Bare Die
Functional Schematic Diagram
ESD
Protection
•
•
•
•
•
•
•
Product Features
12 Watt Output P
1dB
Single Polarity Operation
19dB Gain at 900 MHz
XeMOS II
TM
LDMOS
Integrated ESD Protection, Class 1B
Aluminum Topside Metallization
Gold Backside Metallization
Gate
Manifold
Drain
Manifold
Source - Backside Contact
RF Specifications
Symbol
Frequency
Gain
Efficiency
Linearity
Linearity
R
TH
Parameter
Frequency of Operation
10 Watt CW, 902 - 928MHz
Drain Efficiency at 10 Watt CW, 915MHz
3 Order IMD at 10 Watt PEP (Two Tone), 915MHz
1dB Compression (P
1dB
)
rd
•
•
•
•
•
Applications
Base Station PA Driver
Repeaters
Military Communications
RFID
GSM, CDMA, Edge, WDCDMA
Unit
MHz
dB
%
dBc
W
ºC/W
Min
10
-
-
-
-
-
Typ
-
19
47
-32
12
4
Max
2700
-
-
-
-
-
Thermal Resistance (Junction-to-Case, mounted in package)
Test Conditions: Mounted in ceramic package and tested in Sirenza Evaluation Board V
DS
= 28.0V, I
DQ
= 150mA, T
Mounting Surface
= 25ºC
T
DC Specifications
Symbol
g
m
V
GS
Threshold
V
DS
Breakdown
C
iss
C
rss
C
oss
R
DSON
Parameter
Forward Transconductance @ 125mA I
DQ
, V
DS
=28V
I
DS
=3mA
1mA V
DS
current
Input Capacitance (Gate to Source) V
GS
=0V, V
DS
=28V
Reverse Capacitance (Gate to Drain) V
GS
=0V, V
DS
=28V
Output Capacitance (Drain to Source) V
GS
=0V, V
DS
=28V
Drain to Source Resistance, V
GS
=10V V
DS
=250mV
Unit
mA / V
V
V
pF
pF
pF
R
3.0
65
Min
Typical
590
3.8
70
27.5
0.8
14.7
0.6
0.75
5.0
Max
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
