Sumitomo Electric Industries, Ltd.
Part No.:
Document No.:
Data of issue:
SLT2480-xN-xnnnx Series
HUW0224003-01B
February 26, 2003
Preliminary Specification
of
1.27µm~1.61µm MQW-DFB Laser Diode Module:
(Transmitter Optical Sub-assembly in small PKG)
for CWDM of 2.5Gb/s transmission
SLT2480-xN-xnnnx Series
Page 1 of 8
Sumitomo Electric Industries, Ltd.
Part No.:
Document No.:
Data of issue:
SLT2480-xN-xnnnx Series
HUW0224003-01B
February 26, 2003
1. General
SLT2480-xN-xnnnx Series are 1.27µm~1.61µm InGaAsP/InP MQW-DFB laser diode modules
designed for fiber optic communication systems. These modules are transmitter optical sub-assembly
integrated with a single-stage optical isolator, and are ideally suitable for CWDM of 2.5Gb/s 80km
transmission applications.
A laser diode is mounted into a
φ3.8mm
coaxial package integrated with an InGaAs monitor PD, a
singe-mode fiber-stub and a split sleeve for the optical connector with
φ1.25mm
ferrule.
2. Package dimension and pin assignment
(See attached appendix.)
3. Absolute maximum ratings
Parameter
Storage temperature
Operating case temperature
Optical output power
Forward current (LD)
Reverse voltage (LD)
Reverse voltage (PD)
Reverse current (PD)
Soldering temperature (<10s)
Symbol Ratings
Tstg
-40~+85
Top
0~+70
Pf
5
IfL
150
VrL
2
VrP
15
IrP
2
Stemp
260
Unit
°C
°C
mW
mA
V
V
mA
°C
Page 2 of 8
Sumitomo Electric Industries, Ltd.
Part No.:
Document No.:
Data of issue:
SLT2480-xN-xnnnx Series
HUW0224003-01B
February 26, 2003
4. Electrical and optical characteristics
(Pf=1.5mW, SMF(9.5/125µm), Tc=+25°C, unless otherwise noted.)
Parameter
Threshold current
Optical output power
Operating voltage
Slope efficiency
Peak wavelength
Wavelength Temperature
Coeff
Side-mode suppression ratio
Tracking error
Symbol
Condition
Ith CW
CW, Tc=0~+70°C
Pf CW, If=Ith+20mA
CW, If=Ith+20mA, Tc=0~+70°C
Vf CW, Tc=0~+70°C
Se CW, Average(Ith to Ith+20mA)
λp
CW
— CW, Tc=0~+70°C
Min.
—
—
1.0
0.5
—
0.05
0.07
30
-1.5
—
—
50
—
—
—
-1
25
Typ.
10
—
1.5
—
—
0.075
(*1)
0.1
—
—
0.10
0.10
—
1
—
—
—
—
Max.
Unit
20
mA
50
3.0
mW
—
1.7
V
0.15 mW/mA
nm
0.12 nm/°C
—
1.5
0.15
0.15
—
10
100
10
+1
—
dB
dB
ns
ns
µA
nA
pF
dB
dB
SSR CW, Tc=0~+70°C
∆Pf
Im hold(@Pf=1.5mW(25°C)), CW
Tc=0~+70°C
Rise time
tr
Ib=Ith, 20-80%, Tc=0~+70°C
Fall time
tf
Ib=Ith, 80-20%, Tc=0~+70°C
Monitor current
Im CW, VrP=5V, Tc=0~+70°C
Monitor dark current
Id
VrP=5V
VrP=5V, Tc=0~+70°C
Monitor capacitance
C
VrP=5V, f=1MHz
Connector repeatability
— (*1)
Optical Isolation
— Tc=0~+70°C
Note: *1. Measured with SEI’s master plug and an extra receptacle.
Note: *2. Detail of peak wavelength specification
Channel No.
-K605A
-K240A
-J885A
-J540A
-J205A
-H885A
-H570A
-H260A
-G965A
-G675A
-G390A
-G120A
-F850A
-F590A
-F340A
-F095A
-E855A
-E620A
Rank A
Min.
Typ.
1268 1270
1288 1290
1308 1310
1328 1330
1348 1350
1368 1370
1388 1390
1408 1410
1428 1430
1448 1450
1468 1470
1488 1490
1508 1510
1528 1530
1548 1550
1568 1570
1588 1590
1608 1610
Max.
1272
1292
1312
1332
1352
1372
1392
1412
1432
1452
1472
1492
1512
1532
1552
1572
1592
1612
Unit
nm
Channel No.
-K605B
-K240B
-J885B
-J540B
-J205B
-H885B
-H570B
-H260B
-G965B
-G675B
-G390B
-G120B
-F850B
-F590B
-F340B
-F095B
-E855B
-E620B
Rank B
Min.
Typ.
1267 1270
1287 1290
1307 1310
1327 1330
1347 1350
1367 1370
1387 1390
1407 1410
1427 1430
1447 1450
1467 1470
1487 1490
1507 1510
1527 1530
1547 1550
1567 1570
1587 1590
1607 1610
Max.
1273
1293
1313
1333
1353
1373
1393
1413
1433
1453
1473
1493
1513
1533
1553
1573
1593
1613
Unit
nm
Page 3 of 8
Sumitomo Electric Industries, Ltd.
Part No.:
Document No.:
Data of issue:
SLT2480-xN-xnnnx Series
HUW0224003-01B
February 26, 2003
5. Ordering information
Part number
Pin assignment
SLT2480-LN-xnnnx
TypeA
SLT2486-LN-xnnnx
TypeC
Channel (-xnnnx)
-K605A
-K605B
-K240A
-K240B
-J885A
-J885B
-J540A
-J540B
-J205A
-J205B
-H885A
-H885B
-H570A
-H570B
-H260A
-H260B
-G965A
-G965B
-G675A
-G675B
-G390A
-G390B
-G120A
-G120B
-F850A
-F850B
-F590A
-F590B
-F340A
-F340B
-F095A
-F095B
-E855A
-E855B
-E620A
-E620B
λp@25°C
1270nm
1290nm
1310nm
1330nm
1350nm
1370nm
1390nm
1410nm
1430nm
1450nm
1470nm
1490nm
1510nm
1530nm
1550nm
1570nm
1590nm
1610nm
Number of pin
4
4
Range
±2nm
±3nm
±2nm
±3nm
±2nm
±3nm
±2nm
±3nm
±2nm
±3nm
±2nm
±3nm
±2nm
±3nm
±2nm
±3nm
±2nm
±3nm
±2nm
±3nm
±2nm
±3nm
±2nm
±3nm
±2nm
±3nm
±2nm
±3nm
±2nm
±3nm
±2nm
±3nm
±2nm
±3nm
±2nm
±3nm
Pin cercle diameter
1.35±0.20
1.35±0.20
Status
Preliminary
In production
Page 4 of 8
Sumitomo Electric Industries, Ltd.
Part No.:
Document No.:
Data of issue:
SLT2480-xN-xnnnx Series
HUW0224003-01B
February 26, 2003
6. Precaution
(1) Radiation emitted by laser devices can be dangerous to the eyes. Avoid eye or skin exposure to
direct or scattered radiation.
(2) The modules should be handled in the same manner as ordinary semiconductor devices to
prevent the electro-static damages. For safe keeping and carrying, the modules should be
packaged with ESD proof material. To assemble the modules on PCB, the workbench, the
soldering iron and the human body should be grounded.
(3) Please pay special attention to the atmosphere condition because the dew on the module may
cause some electrical damages.
(4) Under such a strong vibration environment as in automobile, the performance and reliability are
not guaranteed.
Page 5 of 8
