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SM150-H

Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon, DO-213AB, HALOGEN FREE, PLASTIC, MELF-2

器件类别:分立半导体    二极管   

厂商名称:FORMOSA

厂商官网:http://www.formosams.com/

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器件参数
参数名称
属性值
厂商名称
FORMOSA
零件包装代码
DO-213AB
包装说明
O-PELF-R2
针数
2
Reach Compliance Code
unknow
ECCN代码
EAR99
其他特性
LOW POWER LOSS
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-213AB
JESD-30 代码
O-PELF-R2
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
最大重复峰值反向电压
50 V
表面贴装
YES
技术
SCHOTTKY
端子形式
WRAP AROUND
端子位置
END
文档预览
MELF Schottky Barrier Rectifier
SM120 THRU SM160
List
Formosa MS
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2011/01/10
Revision
B
Page.
7
Page 1
DS-222610
MELF Schottky Barrier Rectifier
SM120 THRU SM160
1.0A Surface Mount Schottky Barrier
Rectifiers - 20V-60V
Package outline
Features
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen free parts, ex. SM120-H.
Formosa MS
MELF / DO-213AB
.205(5.2)
.190(4.8)
.024(.60)
.018(.46)
SOLDERABLE
ENDS
.105(2.7)
.095(2.4)
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, MELF / DO-213AB
Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
Dimensions in inches and (millimeters)
Mounting Position : Any
Weight : Approximated 0.12 gram
Maximum ratings and Electrical Characteristics
(AT
PARAMETER
Forward rectified current
Forward surge current
See Fig.1
CONDITIONS
T
A
=25
o
C unless otherwise noted)
Symbol
I
O
I
FSM
I
R
R
θJA
C
J
T
STG
-65
50
110
+175
MIN.
TYP.
MAX.
1.0
30
0.5
10
O
UNIT
A
A
8.3ms single half sine-wave (JEDEC methode)
V
R
= V
RRM
T
J
= 25
O
C
V
R
= V
RRM
T
J
= 100 C
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
O
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
*1
V
RRM
(V)
20
30
40
50
60
V
RMS
*2
(V)
14
21
28
35
42
mA
C/W
pF
O
C
SYMBOLS
SM120
SM130
SM140
SM150
SM160
*3
V
R
(V)
20
30
40
50
60
*4
V
F
(V)
Operating
temperature
T
J
, (
O
C)
-55 to +125
*1 Repetitive peak reverse voltage
*2 RMS voltage
0.50
*3 Continuous reverse voltage
0.70
-55 to +150
*4 Maximum forward voltage@I
F
=1.0A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2011/01/10
Revision
B
Page.
7
Page 2
DS-222610
Rating and characteristic curves (SM120 THRU SM160)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
1.2
1.0
50
INSTANTANEOUS FORWARD CURRENT,(A)
0.8
15
SM
1
SM
1.0
0
20
40
60
80
100
120
140
160
180
200
LEAD TEMPERATURE (°C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
T
J
=25 C
8.3ms Single Half
Sine Wave
JEDEC method
SM
15
0~
S
0.2
M
16
0
3.0
SM
0.4
12
0~
S
M
0.6
10
14
0
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
350
300
250
200
150
100
50
0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
20
~S
M1
40
0~
SM
16
0
T
J
=25 C
Pulse Width 300us
1% Duty Cycle
0.1
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
100
10
1.0
T
J
=75 C
.1
T
J
=25 C
.01
.05
.1
.5
1
5
10
50
100
.01
0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENTAGE RATED PEAK REVERSE VOLTAGE
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2011/01/10
Revision
B
Page.
7
Page 3
DS-222610
MELF Schottky Barrier Rectifier
SM120 THRU SM160
Pinning information
Pin
Pin1
Pin2
cathode
anode
Simplified outline
Formosa MS
Symbol
1
2
1
2
Marking
Type number
SM120
SM130
SM140
SM150
SM160
Marking code
Cathode Only
Cathode Only
Cathode Only
Cathode Only
Cathode Only
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
MELF
A
0.118 (3.00)
B
0.079 (2.00)
C
0 .130 (3.30)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2011/01/10
Revision
B
Page.
7
Page 4
DS-222610
MELF Schottky Barrier Rectifier
SM120 THRU SM160
Packing information
P
0
P
1
d
E
F
B
W
Formosa MS
A
P
D
2
T
C
D
W
1
D
1
unit:mm
Item
Symbol
Tolerance
MELF
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D
1
D
D
1
D
2
E
F
P
P
0
P
1
T
W
W
1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.00
5.33
3.00
1.50
330
50
178.00
62.00
13.00
1.75
5.50
4.00
4.00
2.00
0.23
12.00
18.00
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2011/01/10
Revision
B
Page.
7
Page 5
DS-222610
查看更多>
参数对比
与SM150-H相近的元器件有:SM130-H、SM120-H、SM160-H、SM140-H。描述及对比如下:
型号 SM150-H SM130-H SM120-H SM160-H SM140-H
描述 Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon, DO-213AB, HALOGEN FREE, PLASTIC, MELF-2 Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-213AB, HALOGEN FREE, PLASTIC, MELF-2 Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-213AB, HALOGEN FREE, PLASTIC, MELF-2 Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-213AB, HALOGEN FREE, PLASTIC, MELF-2 Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon, DO-213AB, HALOGEN FREE, PLASTIC, MELF-2
厂商名称 FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA
零件包装代码 DO-213AB DO-213AB DO-213AB DO-213AB DO-213AB
包装说明 O-PELF-R2 O-PELF-R2 O-PELF-R2 O-PELF-R2 O-PELF-R2
针数 2 2 2 2 2
Reach Compliance Code unknow unknown unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 DO-213AB DO-213AB DO-213AB DO-213AB DO-213AB
JESD-30 代码 O-PELF-R2 O-PELF-R2 O-PELF-R2 O-PELF-R2 O-PELF-R2
元件数量 1 1 1 1 1
端子数量 2 2 2 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 1 A 1 A 1 A 1 A 1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
最大重复峰值反向电压 50 V 60 V 60 V 60 V 50 V
表面贴装 YES YES YES YES YES
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND
端子位置 END END END END END
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