SM15T Series
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
Available
• 1500 W peak pulse power capability with a
10/1000 μs waveform
SMC (DO-214AB)
• Excellent clamping capability
• Low inductance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
WM
V
BR
uni-directional
V
BR
bi-directional
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
5.8 V to 188 V
6.8 V to 220 V
6.8 V to 220 V
1500 W
6.5 W
200 A
150 °C
Uni-directional, bi-directional
SMC (DO-214AB)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SM15T12CA).
Electrical characteristics apply in both directions.
MECHANICAL DATA
Case:
SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, ...)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity:
for uni-directional types the band denotes cathode
end, no marking on bi-directional types
APPLICATION NOTES
A 1500 W (SMC) device is normally selected when the threat
of transients is from lightning induced transients, conducted
via external leads or I/O lines. It is also used to protect
against switching transients induced by large coils or
industrial motors. Source impedance at component level in
a system is usually high enough to limit the current within the
peak pulse current (I
PP
) rating of this series. In an overstress
condition, the failure mode is a short circuit.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 μs waveform
(1)(2)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
(fig. 3)
Power dissipation on infinite heatsink at T
A
= 50 °C
Peak forward surge current 10 ms single half sine-wave uni-directional only
(2)
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
T
J
, T
STG
VALUE
1500
See next table
6.5
200
-65 to +150
UNIT
W
A
W
A
°C
Revision: 24-Jan-2019
Document Number: 88380
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM15T Series
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
TYPE
(1)
DEVICE
MARKING
CODE
UNI
SM15T6V8A
SM15T7V5A
SM15T10A
SM15T12A
SM15T15A
SM15T18A
SM15T22A
SM15T24A
SM15T27A
SM15T30A
SM15T33A
SM15T36A
SM15T39A
SM15T68A
SM15T100A
SM15T150A
SM15T200A
SM15T220A
GDE7
GDK7
GDT7
GDX7
GEG7
GEM7
GET7
GEV7
GEX7
GFE7
GFG7
GFK7
GFM7
GGG7
GGV7
GHK7
GHR7
GHR8
BI
GDE7
BDK7
BDT7
BDX7
GEG7
BEM7
BET7
GEV7
BEX7
BFE7
GFG7
BFK7
BFM7
GGG7
GGV7
GHK7
GHR7
GHR8
BREAKDOWN
VOLTAGE
V
BR
AT I
T (2)
(V)
MIN.
6.45
7.13
9.50
11.4
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
64.6
95.0
143
190
209
MAX.
7.14
7.88
10.5
12.6
15.8
18.9
23.1
25.2
28.4
31.5
34.7
37.8
41.0
71.4
105
158
210
231
TEST
CURRENT
I
T
(mA)
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
RM
(V)
5.80
6.40
8.55
10.2
12.8
15.3
18.8
20.5
23.1
25.6
28.2
30.8
33.3
58.1
85.5
128
171
188
LEAKAGE
CURRENT
I
RM
AT V
RM
I
D (3)
(μA)
1000
500
10
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
CLAMPING
VOLTAGE
V
C
AT I
PPM
(10/1000 μs)
(V)
10.5
11.3
14.5
16.7
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
92.0
137
207
274
328
(A)
143
132
103
90.0
71.0
59.5
49.0
45.0
40.0
36.0
33.0
30.0
28.0
16.3
11.0
7.20
5.50
4.60
CLAMPING
VOLTAGE
V
C
AT I
PPM
(8/20 μs)
(V)
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59.0
64.3
69.7
121
178
265
353
388
(A)
746
690
538
461
368
308
254
234
207
187
169
156
143
83
56
38
28
26
5.7
6.1
7.3
7.8
8.4
8.8
9.2
9.4
9.6
9.7
9.8
9.9
10.0
10.4
10.6
10.8
10.8
10.8
T
MAX.
10
-4
/°C
Notes
(1)
For bi-directional devices add suffix “CA” instead of “A”
(2)
V
BR
measured after I
T
applied for 300 μs square wave pulse
(3)
For bi-polar devices with V
RM
= 10 V or under, the I
RM
limit is doubled
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient air
(1)
Typical thermal resistance, junction to lead
Note
(1)
Mounted on minimum recommended pad layout
SYMBOL
R
JA
R
JL
VALUE
75
15
UNIT
°C/ W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SM15T10A-E3/57T
SM15T10A-M3/57T
SM15T10A-E3/9AT
SM15T10A-M3/9AT
SM15T10AHE3_A/H
(1)
SM15T10AHM3_A/H
(1)
SM15T10AHE3_A/I
(1)
SM15T10AHM3_A/I
(1)
(1)
UNIT WEIGHT (g)
0.211
PREFERRED PACKAGE CODE
57T
BASE QUANTITY
850
DELIVERY MODE
7" diameter plastic tape and reel
0.211
9AT
3500
13" diameter plastic tape and reel
0.211
H
850
7" diameter plastic tape and reel
0.211
I
3500
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
Revision: 24-Jan-2019
Document Number: 88380
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM15T Series
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
20 000
10 000
P
PPM
- Peak Pulse Power (kW)
10
C
J
- Junction Capacitance (pF)
Measured at
Zero Bias
1000
V
R
, Measured at
Stand-Off
Voltage, V
WM
100
Uni-Directional
Bi-Directional
10
1
10
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
400
1
0.31 x 0.31" (8.0 x 8.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
t
d
- Pulse
Width
(s)
V
WM
- Reverse Stand-Off Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 -
Typical Junction Capacitance
Uni-Directional
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
75
Transient Thermal Impedance (°C/W)
10
50
1.0
25
0
0
25
50
75
100
125
150
175
200
0.1
0.001
0.01
0.1
1
10
100
1000
T
J
- Initial Temperature (°C)
t - Pulse Duration (s)
Fig. 2 -
Pulse Power or Current
vs.
Initial Junction Temperature
Fig. 5 -
Typical Transient Thermal Impedance
150
I
PPM
- Peak Pulse Current, % I
RSM
Peak Forward Surge Current (A)
t
r
= 10 µs
Peak Value
I
PPM
T
J
= 25 °C
Pulse
Width
(t
d
)
is defined as the Point
where
the Peak Current
decays to 50 % of I
PPM
200
100
100
Half Value - I
PP
I
PPM
2
50
10/1000 µs
Waveform
as defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
T
J
= T
J
max.
8.3 ms Single Half Sine-Wave
10
1
10
100
t - Time (ms)
Number
of Cycles at 60 Hz
Fig. 3 -
Pulse Waveform
Fig. 6 -
Maximum Non-Repetitive Forward Surge Current
Uni-Directional Use Only
Revision: 24-Jan-2019
Document Number: 88380
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM15T Series
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
SMC
(DO-214AB)
Cathode Band
0.185 (4.69)
MAX.
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
MIN.
Vishay General Semiconductor
Mounting Pad Layout
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
MIN.
0.320 REF.
0.060 (1.52)
0.030 (0.76)
0.320 (8.13)
0.305 (7.75)
0.008 (0.2)
0 (0)
Revision: 24-Jan-2019
Document Number: 88380
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Document Number: 91000
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