SMART
Features
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®
SM5360230U1P6UU
Preliminary
Modular Technologies
8MByte (2M x 36) DRAM Module - 1Mx16 & 4Mx4 based
72-pin SIMM
Part Numbers
SM536023011P6UU
SM536023091P6UU
:
:
Configuration
:
Parity
Access Time
:
60/70/80ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3V
Refresh
:
1K
Device Physicals
:
400mil TSOP
Lead Finish
:
Gold/Solder
Length x Height
:
4.250" x 1.000"
No. of sides
:
Double-sided
Mating Connector (Examples)
Horizontal
:
AMP-7-382486-2 (Tin) / 7-382487-2 (Gold)
Vertical
:
AMP-822019-4 (Tin) / 822031-4 (Gold)
Angled
:
AMP-822110-3 (Tin) / 822097-3 (Gold)
FPM, 3.3V
EDO, 3.3V
Note: Refer last page for all "U” options.
Functional Diagram
RAS0#
CAS0#
CAS1#
1Mx18
Block
1Mx18
Block
RAS2#
CAS2#
CAS3#
RAS1#
1Mx18
Block
1Mx18
Block
RAS3#
DQ9~DQ17
DQ18~DQ35
DQ0~DQ35
Notes : 1.
2.
3.
4.
A0~A9 to all DRAMs.
WE# to all DRAMs.
OE# of all DRAMs is grounded.
Each 4Mx18 Block comprises of one 1Mx16 DRAMs and two 4Mx4
DRAMs (4Mx4 DRAMs are being used as 1Mx1 DRAMs).
5. Refer to note on page 2 for details on CAS# control scheme.
( All specifications of this device are subject to change without notice.)
V
CC
V
SS
Decoupling capacitors
to all devices.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
1
SMART
Pin Name
A0~A9
DQ0~DQ35
RAS0#~RAS3#
CAS0#~CAS3#
WE#
PD1~PD4
V
CC
V
SS
NC
®
SM5360230U1P6UU
Preliminary
Modular Technologies
Pin
No.
Row and Column Addresses
Data Inputs/Outputs
Row Address Strobes
Column Address Strobes
Write Enable
Presence Detects
Power Supply
Ground
No Connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Pin
Designation
V
SS
DQ0
DQ18
DQ1
DQ19
DQ2
DQ20
DQ3
DQ21
V
CC
NC
A0
A1
A2
A3
A4
A5
A6
NC
DQ4
DQ22
DQ5
DQ23
DQ6
DQ24
DQ7
DQ25
A7
NC
V
CC
A8
A9
RAS3#
RAS2#
DQ26
DQ8
Pin
No.
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Pin
Designation
DQ17
DQ35
V
SS
CAS0#
CAS2#
CAS3#
CAS1#
RAS0#
RAS1#
NC
WE#
NC
DQ9
DQ27
DQ10
DQ28
DQ11
DQ29
DQ12
DQ30
DQ13
DQ31
V
CC
DQ32
DQ14
DQ33
DQ15
DQ34
DQ16
NC
PD1
PD2
PD3
PD4
NC
V
SS
Note :
CAS# v/s Data I/Os
CAS0#
CAS1#
CAS2#
CAS3#
controls
controls
control
controls
DQ0~DQ8
DQ9~DQ17
DQ18~DQ26
DQ27~DQ35
Presence Detect Pins
Access Time
70ns
80ns
NC
NC
NC
NC
NC
V
SS
NC
V
SS
Pin
PD1
PD2
PD3
PD4
60ns
NC
NC
NC
NC
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
2
SMART
FPM & EDO-based Modules
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
®
SM5360230U1P6UU
Preliminary
Modular Technologies
DC Characteristics
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Ratings
- 0.5 to +4.6
12
0 to +70
- 55 to +150
50
Unit
V
W
°
C
°
C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70
°
C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Capacitance
(V
CC
= 3.3V
±
10%, T
A
= +25
°
C)
Parameter
Input Capacitance (Address)
Input Capacitance (WE#)
Input Capacitance (RAS#)
Input Capacitance (CAS#)
Input/Output Capacitance (DQ0~DQ35)
Notes : Capacitance is sampled per Mil-Std-883.
Symbol
C
I1
C
I2
C
I3
C
I4
C
I/O
Max
70
94
31
52
24
Unit
pF
pF
pF
pF
pF
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
0.8
Unit
V
V
V
V
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
3
SMART
®
SM5360230U1P6UU
Preliminary
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.3V
0V
≤
V
out
≤
V
CC
D
out
= Disable
High I
out
= -2mA
Low I
out
= 2mA
60ns
70ns
80ns
Min Max Min Max Min Max
-120 120 -120 120 -120 120
-20
20 -20
20
-20 20
2.4
-
-
0.4
2.4
-
-
0.4
2.4
-
-
0.4
Unit
µ
A
µ
A
V
V
(V
CC
= 3.3V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
TTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=V
IH
; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=V
IL
, CAS#, Address
cycling @ t
PC
=min.
60ns
712
Max.
70ns
652
Unit
80ns
592
mA
Note
1, 2
24
24
24
mA
Standby Current
I
CC2
12
712
712
512
12
652
652
452
12
592
592
392
mA
mA
mA
mA
1, 3
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
I
CC3
I
CC4
I
CC5
Notes:
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open condition.
2. Address can be changed once or less while RAS# = V
IL
.
3. Address can be changed once or less while CAS# = V
IH
.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
4
SMART
EDO-based Modules
®
SM5360230U1P6UU
Preliminary
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
TTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=V
IH
; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=V
IL
, CAS#, Address
cycling @ t
HPC
=min.
60ns
712
Max.
70ns
652
Unit
80ns
592
mA
Note
1, 2
24
24
24
mA
Standby Current
I
CC2
12
712
712
632
12
652
652
572
12
592
592
512
mA
mA
mA
mA
1, 3
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Hyper Page Mode
Current
I
CC3
I
CC4
I
CC5
Notes:
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open condition.
2. Address can be changed once or less while RAS# = V
IL
.
3. Address can be changed once or less while CAS# = V
IH
.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
5
模拟与混合信号
