SM5S10 thru SM5S36A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• T
J
= 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
3600 W
2800 W
5W
500 A
175 °C
DO-218AB
PRIMARY CHARACTERISTICS
V
WM
P
PPM
(10 x 1000 μs)
P
PPM
(10 x 10 000 μs)
P
D
I
FSM
T
J
max.
10 V to 36 V
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case:
DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
Heatsink is anode
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
with 10/1000 μs waveform
Peak pulse power dissipation
with 10/10 000 μs waveform
Power dissipation on infinite heatsink at T
C
= 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Note
(1)
Non-repetitive current pulse at T = 25 °C
A
P
PPM
P
D
I
PPM (1)
I
FSM
T
J
, T
STG
SYMBOL
VALUE
3600
W
2800
5.0
See next table
500
- 55 to + 175
W
A
A
°C
UNIT
Revision: 14-Sep-11
Document Number: 88382
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM5S10 thru SM5S36A
www.vishay.com
Vishay General Semiconductor
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
15
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
MAXIMUM REVERSE
LEAKAGE
AT V
WM
T
J
= 175 °C
I
D
(μA)
250
250
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
MAXIMUM
MAX. PEAK
PULSE CURRENT CLAMPING
VOLTAGE
AT 10/1000 μs
AT I
PPM
WAVEFORM
(A)
V
C
(V)
191
212
179
198
164
181
151
167
140
155
134
148
125
138
118
130
112
123
101
111
91
101
84
93
77
86
72
79
67
74
61
68
56
62
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.1
45.4
53.5
48.4
59.0
53.3
64.3
58.1
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE
TYPE
SM5S10
SM5S10A
SM5S11
SM5S11A
SM5S12
SM5S12A
SM5S13
SM5S13A
SM5S14
SM5S14A
SM5S15
SM5S15A
SM5S16
SM5S16A
SM5S17
SM5S17A
SM5S18
SM5S18A
SM5S20
SM5S20A
SM5S22
SM5S22A
SM5S24
SM5S24A
SM5S26
SM5S26A
SM5S28
SM5S28A
SM5S30
SM5S30A
SM5S33
SM5S33A
SM5S36
SM5S36A
BREAKDOWN
VOLTAGE
V
BR
(V)
MIN.
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
MAX.
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
TEST
CURRENT
I
T
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
STAND-OFF
VOLTAGE
V
WM
(V)
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
16.0
16.0
17.0
17.0
18.0
18.0
20.0
20.0
22.0
22.0
24.0
24.0
26.0
26.0
28.0
28.0
30.0
30.0
33.0
33.0
36.0
36.0
Note
• For all types maximum V
F
= 2.0 V at I
F
= 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
Revision: 14-Sep-11
Document Number: 88382
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM5S10 thru SM5S36A
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to case
SYMBOL
R
JC
VALUE
1.0
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SM5S10AHE3/2D
(1)
Note
(1)
AEC-Q101 qualified
UNIT WEIGHT (g)
2.505
PREFERRED PACKAGE CODE
2D
BASE QUANTITY
750
DELIVERY MODE
13" diameter plastic tape and reel,
anode towards the sprocket hole
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
8.0
150
t
r
= 10 μs
Peak Value
I
PPM
Power Dissipation (W)
6.0
Input Peak Pulse Current (%)
T
J
= 25 °C
Pulse Width (t
d
) is
Defined as the Point
Where the Peak Current
Decays to 50 % of I
PPM
100
4.0
Half Value - I
PP
I
PPM
2
50
2.0
t
d
0
0
50
100
150
200
0
0
10
20
30
40
Case Temperature (°C)
t - Time (ms)
Fig. 1 -
Power Derating Curve
Fig. 3 -
Pulse Waveform
3000
10 000
2000
1500
1000
500
0
25
50
75
100
125
150
175
Reverse
Surge
Power (W)
1000
10
100
2500
Load Dump Power (W)
Case Temperature (°C)
Pulse Width (ms) - ½ I
PP
Exponential Waveform
Fig. 2 -
Load Dump Power Characteristics
(10 ms Exponential Waveform)
Fig. 4 -
Reverse Power Capability
Revision: 14-Sep-11
Document Number: 88382
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM5S10 thru SM5S36A
www.vishay.com
Vishay General Semiconductor
100
Transient Thermal Impedance (°C/W)
10
R
θJA
1
R
θJC
0.1
0.01
0.01
0.1
1
10
100
t - Pulse Width (s)
Fig. 5 -
Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-218AB
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
0.524 (13.3)
0.116 (3.0)
0.093 (2.4)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.091 (2.3)
0.067 (1.7)
0.413 (10.5)
0.374 (9.5)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.382 (9.7)
0.197 (5.0)
0.185 (4.7)
0.016 (0.4) MIN.
Lead 2/Metal Heatsink
Lead 1
0.366 (9.3)
0.343 (8.7)
0.606 (15.4)
0.583 (14.8)
0.138 (3.5)
0.098 (2.5)
0.098 (2.5)
0.059 (1.5)
0.028 (0.7)
0.020 (0.5)
Revision: 14-Sep-11
Document Number: 88382
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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Disclaimer
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Revision: 02-Oct-12
1
Document Number: 91000
