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SM6T10C

Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-214AA,

器件类别:分立半导体    二极管   

厂商名称:General Instrument Corp

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器件参数
参数名称
属性值
厂商名称
General Instrument Corp
Reach Compliance Code
unknow
其他特性
LOW INDUCTANCE, UL FLAMMABILITY
最大击穿电压
11 V
最小击穿电压
9 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-214AA
JESD-30 代码
R-PDSO-C2
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性
BIDIRECTIONAL
最大功率耗散
5 W
认证状态
Not Qualified
表面贴装
YES
技术
AVALANCHE
端子形式
C BEND
端子位置
DUAL
文档预览
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
SM6T SERIES
T
RANS
Z
ORB
™ SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage -
6.8 to 220 Volts
Peak Pulse Power -
600 Watts
FEATURES
DO-214AA
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
For surface mounted applications in order
to optimize board space
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Excellent clamping capability
Repetition Rate (duty cycle): 0.01%
Fast reponse time: typically less than 1ps from 0 volts to
V
BR
min.
Typical I
D
less than 1µA above 10V
High temperature soldering: 250°C/10 seconds
at terminals
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
MECHANICAL DATA
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008 (0.203)
MAX.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-214AA (SMB) molded plastic over
passivated junction
Terminals:
Solder plated solderable per MIL-STD-750,
Method 2026
Polarity:
For uni-directional types: Color band
denotes positive end (cathode)
Standard Packaging:
12mm tape (EIA STD RS-481)
Weight:
0.003 ounces, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOLS
VALUE
UNIT
Peak Pulse Power Dissipation on 10/1000µs
waveform
(NOTES 1, 2, Fig. 1)
Peak Pulse Current on 10/1000µs
waveform
(NOTE 1, Fig. 3)
Power Dissipation on Infinite Heatsink, T
A
=50°C
Peak Forward Surge Current, 10ms Single Half Sine-wave,
Undirectional Only
Max. Junction Temperature
Storage Temperature Range
Thermal Resistance Junction to Ambient Air
(NOTE 2)
Thermal Resistance Junction to Leads
P
PPM
I
PPM
P
M(AV)
I
FSM
T
J
T
STG
R
ΘJA
R
ΘJL
Minimum 600
See Table 1
5.0
100
150
-65 to +175
100
20
Watts
Amps
Watts
Amps
°C
°C
°C/W
°C/W
NOTES
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25°C per Fig. 2
(2) Mounted on 5.0mm
2
(.013mm thick) land areas.
(3) Measured on 8.3ms single half sine-wave or equivalent squarewave, duty cycle 4 pulses per minute maximum.
1/21/99
ELECTRICAL CHARACTERISTICS RATINGS at (T
A
=25ºC unless otherwise noted)
Device Marking Code Standoff Leakage
Voltage Current
(3)
V
RM
I
RM
@ V
RM
Uni
SM6T6V8A
SM6T7V5A
SM6T10A
SM6T12A
SM6T15A
SM6T18A
SM6T22A
SM6T24A
SM6T27A
SM6T30A
SM6T33A
SM6T36A
SM6T39A
SM6T68A
SM6T100A
SM6T150A
SM6T200A
SM6T220A
KE7
KK7
KT7
KX7
LG7
LM7
LT7
LV7
LX7
ME7
MG7
MK7
MM7
NG7
NV7
PK7
PR7
PR8
Bi
KE7
AK7
AT7
AX7
LG7
BM7
BT7
LV7
BX7
CE7
MG7
CK7
CM7
NG7
NV7
PK7
PR7
PR8
(Volts)
5.80
6.40
8.55
10.2
12.8
15.3
18.8
20.5
23.1
25.6
28.2
30.8
33.3
58.1
85.5
128
171
188
(µA)
1000
500
10.0
5.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
Breakdown Voltage
V
BR
@ I
T
(2)
(Volts)
Min
6.45
7.13
9.50
11.4
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
64.6
95.0
143
190
209
Max
7.14
7.88
10.5
12.6
15.8
18.9
23.1
25.2
28.4
31.5
34.7
37.8
41.0
71.4
105
158
210
231
Test
Current
I
T
(mA)
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Clamping Voltage Clamping Voltage
V
C
@ I
PP
V
C
@ I
PP
10/1000µs
8/20µs
(Volts)
10.5
11.3
14.5
16.7
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
92.0
137
207
274
328
(Amps)
57.0
53.0
41.0
36.0
28.0
24
20.0
18.0
16.0
14.5
13.1
12.0
11.1
6.50
4.40
2.90
2.20
2.00
(Volts)
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59.0
64.3
69.7
121
178
265
353
388
(Amps)
298
276
215
184
147
123
102
93
83
75
68
62
57
33
22.5
15
11.3
10.3
5.7
6.1
7.3
7.8
8.4
8.8
9.2
9.4
9.6
9.7
9.8
9.9
10.0
10.4
10.6
10.8
10.8
10.8
α
T
Max
10
-4
/°C
Type
(1)
NOTES:
(1) For bi-directional devices add “C” for ±10% and “CA” for ±5% tolerance of V
BR
(2) V
BR
measured after I
T
applied for 300µs square wave pulse
(3) For bipolar devices with V
R
=10 Volts or under, the I
T
limit is doubled
APPLICATION NOTES
A 600W (SMB) device is normally selected when the threat of transients is from lightning induced transients, conducted via external leads or I/O lines. It is also used to pro-
tect against switching transients induced by large coils or industrial motors. Source impedance at component level in a system is usually high enough to limit the current
within the peak pulse current (I
PP
) rating of this series. In an overstress condition, the failure mode is a short circuit.
RECOMMENDED PAD SIZES
The pad dimensions should be 0.010” (0.25mm) longer than the contact size, in the lead axis. This allows a solder fillet to form, see figure below. Contact factory for
soldering methods.
0.90 (2.28)
0.025 (2.16)
0.070 (1.78)
RATINGS AND CHARACTERISTICS CURVES SM6T SERIES
FIG. 1 - PEAK PULSE POWER RATING CURVE
P
PPM
, PEAK PULSE POWER, kW
NON-REPETITIVE
PULSE WAVEFORM
SHOWN IN FIG. 3
T
A
=25°C
PEAK PULSE POWER (P
PP
) or CURRENT (I
PP
)
DERATING IN PERCENTAGE, %
100
FIG. 2 - PULSE DERATING CURVE
100
10
75
50
1.0
25
0.2 x 0.2” (0.5 x 0.5mm)
COPPER PAD AREAS
0.1
0.1
µ
s
1.0
µ
s
10
µ
s
100
µ
s
1.0ms
10ms
0
0
25
50
75
100
125
150
175
200
td, PULSE WIDTH, sec.
T
A
, AMBIENT TEMPERATURE, °C
FIG. 3 - PULSE WAVEFORM
150
I
PPM,
PEAK PULSE CURRENT, %
tr=10µsec.
PEAK VALUE
I
PPM
HALF VALUE - I
PP
2
PULSE WIDTH (td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% of I
PPM
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
UNIDIRECTIONAL
6,000
T
J
=25° C
f=1.0 MH
Z
Vsig=50mVp-p
MEASURED at
ZERO BIAS
100
C
J
, JUNCTION CAPACITANCE, pF
1,000
50
10/1000µsec. WAVEFORM
as DEFINED by R.E.A.
MEASURED at
STAND-OFF
VOLTAGE, V
WM
0
td
0
1.0
2.0
t, TIME, ms
3.0
4.0
100
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
BIDIRECTIONAL
6,000
T
J
=25° C
f=1.0 MH
Z
Vsig=50mVp-p
10
1
10
100 200
V
WM
, REVERSE STAND-OFF VOLTAGE, VOLTS
C
J
, JUNCTION CAPACITANCE, pF
1,000
MEASURED at
ZERO BIAS
FIG. 6 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
I
FSM,
PEAK FORWARD SURGE CURRENT,
AMPERES
200
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
UNIDIRECTIONAL ONLY
MEASURED at
STAND-OFF
VOLTAGE, V
WM
100
100
10
1
10
100 200
10
1
10
NUMBER OF CYCLES AT 60 H
Z
100
V
WM,
REVERSE STAND-OFF VOLTAGE,
VOLTS
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