SM6T Series
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 μs waveform
• Excellent clamping capability
• Low inductance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-214AA (SMBJ)
PRIMARY CHARACTERISTICS
V
WM
V
BR
uni-directional
V
BR
bi-directional
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
5.80 V to 188 V
6.8 V to 220 V
6.8 V to 220 V
600 W
5.0 W
100 A
150 °C
Uni-directional, bi-directional
DO-214AA (SMBJ)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case:
DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SM6T12CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 μs waveform
(1)(2)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
(fig. 3)
Power dissipation on infinite heatsink at T
A
= 50 °C
Peak forward surge current 10 ms single half sine-wave uni-directional only
(2)
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
T
J
, T
STG
VALUE
600
See next table
5.0
100
- 65 to + 150
UNIT
W
A
W
A
°C
Revision: 13-Dec-13
Document Number: 88385
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM6T Series
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
TYPE
(1)
DEVICE
MARKING
CODE
UNI
SM6T6V8A
SM6T7V5A
SM6T10A
SM6T12A
SM6T15A
SM6T18A
SM6T22A
SM6T24A
SM6T27A
SM6T30A
SM6T33A
SM6T36A
SM6T39A
SM6T68A
SM6T100A
SM6T150A
SM6T200A
SM6T220A
KE7
KK7
KT7
KX7
LG7
LM7
LT7
LV7
LX7
ME7
MG7
MK7
MM7
NG7
NV7
PK7
PR7
PR8
BI
KE7
AK7
AT7
AX7
LG7
BM7
BT7
LV7
BX7
CE7
MG7
CK7
CM7
NG7
NV7
PK7
PR7
PR8
BREAKDOWN
VOLTAGE
V
BR
AT I
T (2)
(V)
MIN.
6.45
7.13
9.50
11.4
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
64.6
95.0
143
190
209
MAX.
7.14
7.88
10.5
12.6
15.8
18.9
23.1
25.2
28.4
31.5
34.7
37.8
41.0
71.4
105
158
210
231
TEST
CURRENT
I
T
(mA)
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.80
6.40
8.55
10.2
12.8
15.3
18.8
20.5
23.1
25.6
28.2
30.8
33.3
58.1
85.5
128
171
188
LEAKAGE
CURRENT
I
RM
AT V
RM
(μA)
1000
500
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
CLAMPING
VOLTAGE
V
C
AT I
PPM
10/1000 μs
(V)
10.5
11.3
14.5
16.7
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
92.0
137
207
274
328
(A)
57.0
53.0
41.0
36.0
28.0
24.0
20.0
18.0
16.0
14.5
13.1
12.0
11.1
6.50
4.40
2.90
2.20
2.00
CLAMPING
VOLTAGE
V
C
AT I
PP
8/20 μs
(V)
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59
64.3
69.7
121
178
265
353
388
(A)
298
276
215
184
147
123
102
93
83
75
68
62
57
33
22.5
15
11.3
10.3
5.7
6.1
7.3
7.8
8.4
8.8
9.2
9.4
9.6
9.7
9.8
9.9
10.0
10.4
10.6
10.8
10.8
10.8
T
MAX.
10
-4
/°C
Notes
(1)
For bi-directional devices add suffix “CA”
(2)
V
BR
measured after I
T
applied for 300 µs square wave pulse
(3)
For bi-polar devices with V = 10 V or under, the I limit is doubled
R
T
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient air
(1)
Typical thermal resistance, junction to lead
Note
(1)
Mounted on minimum recommended pad layout
SYMBOL
R
JA
R
JL
VALUE
100
20
UNIT
°C/ W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SM6T10A-E3/52
SM6T10A-E3/5B
SM6T10AHE3/52
(1)
SM6T10AHE3/5B
(1)
(1)
UNIT WEIGHT (g)
0.096
0.096
0.096
0.096
PREFERRED PACKAGE CODE
52
5B
52
5B
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
Revision: 13-Dec-13
Document Number: 88385
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM6T Series
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
6000
P
PPM
- Peak Pulse Power (kW)
C
J
- Junction Capacitance (pF)
Measured at
Zero Bias
1000
10
1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1
µs
100
V
R
, Measured at
Stand-Off
Voltage V
WM
Uni-Directional
Bi-Directional
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
200
10
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
1
10
t
d
- Pulse
Width
(s)
V
WM
- Reverse Stand-Off
Voltage
(V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 -
Typical Junction Capacitance
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
75
Transient Thermal Impedance (°C/W)
10
50
1.0
25
0
0
25
50
75
100
125
150
175
200
0.1
0.001
0.01
0.1
1
10
100
1000
T
J
- Initial Temperature (°C)
t - Pulse Duration (s)
Fig. 2 -
Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 -
Typical Transient Thermal Impedance
150
200
I
PPM
- Peak Pulse Current, % I
RSM
Peak Forward Surge Current (A)
t
r
= 10
µs
Peak
Value
I
PPM
T
J
= 25 °C
Pulse
Width
(t
d
)
is defined as the Point
where
the Peak Current
decays to 50 % of I
PPM
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
100
Half
Value
- I
PP
I
PPM
2
50
10/1000
µs Waveform
as defined
by
R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
10
1
10
100
t - Time (ms)
Number
of Cycles at 60 Hz
Fig. 3 -
Pulse Waveform
Fig. 6 -
Maximum Non-Repetitive Peak Forward Surge Current
Revision: 13-Dec-13
Document Number: 88385
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM6T Series
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Vishay General Semiconductor
DO-214AA (SMBJ)
Cathode Band
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
Mounting Pad Layout
0.106 MAX
(2.69 MAX)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.083 MIN
(2.10 MIN)
0.096 (2.44)
0.084 (2.13)
0.050 MIN
(1.27 MIN)
0.220 REF
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008
(0.203)
Max.
Revision: 13-Dec-13
Document Number: 88385
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000
