SMA6J5.0A thru SMA6J28A
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
•
•
•
•
Low profile package
Ideal for automated placement
Available in uni-directional polarity only
Excellent clamping capability
J-STD-020,
• Meets MSL level 1, per
LF maximum peak of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DO-214AC (SMA)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
PRIMARY CHARACTERISTICS
V
BR
V
WM
P
PPM
(10 x 1000 μs)
P
PPM
(8 x 20 μs)
P
D
at T
A
= 50 °C
I
FSM
T
J
max.
Polarity
Package
6.4 V to 34.4 V
5.0 V to 28 V
600 W
4000 W
4W
50 A
150 °C
Uni-directional
DO-214AC (SMA)
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)(2)
Peak pulse power dissipation with a 8/20 μs waveform
Peak pulse current with a 10/1000 μs waveform
(1)(2)
Peak pulse current with a 8/20 μs waveform
Power dissipation on infinite heatsink, T
A
= 50 °C
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 1 and derated above T = 25 °C per fig. 2.
A
(2)
Mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
I
PPM
P
D
I
FSM
T
J
, T
STG
See next table
4.0
50
-55 to +150
A
W
A
°C
SYMBOL
P
PPM
VALUE
600
4000
UNIT
W
Revision: 18-Jun-14
Document Number: 89115
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMA6J5.0A thru SMA6J28A
www.vishay.com
Vishay General Semiconductor
I
I
F
INDEX OF SYMBOLS
SYMBOL
V
WM
V
BR
V
C
I
D
I
PP
T
V
F
R
D
PARAMETER
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current at V
WM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Dynamic resistance
V
BR
V
C
V
WM
I
D
V
F
I
T
V
I
PP
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
MIN.
V
SMA6J5.0A
SMA6J6.0A
SMA6J6.5A
SMA6J7.5A
SMA6J8.0A
SMA6J8.5A
SMA6J10A
SMA6J11A
SMA6J12A
SMA6J13A
SMA6J15A
SMA6J16A
SMA6J17A
SMA6J18A
SMA6J20A
SMA6J22A
SMA6J24A
SMA6J26A
SMA6J28A
6AE
6AG
6AK
6AP
6AR
6AT
6AX
6AZ
6BE
6BG
6BM
6BP
6BR
6BT
6BV
6BX
6BZ
6CE
6CG
6.4
6.7
7.2
8.33
8.89
9.4
11.1
12.2
13.3
14.4
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
7.07
7.41
7.96
9.21
9.83
10.4
12.3
13.5
14.7
15.9
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
MAX.
mA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
150
600
100
50
20
20
1
1
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
MAXIMUM
REVERSE
LEAKAGE
I
D
AT V
WM
25 °C
μA
375
1500
250
125
50
50
5
5
1
1
1
1
1
1
1
1
1
1
1
85 °C
V
5.0
6.0
6.5
7.5
8.0
8.5
10
11
12
13
15
16
17
18
20
22
24
26
28
STAND-OFF
VOLTAGE
V
WM
V
C
AT I
PP
R
D (2)
V
C
AT I
PP
8/20 μs
MAX.
A
65.9
63.2
58.8
50.8
48.0
45.1
38.2
34.8
31.9
29.4
25.4
23.8
22.5
21.2
19.1
17.4
15.9
14.7
13.6
0.031
0.033
0.038
0.051
0.056
0.064
0.089
0.107
0.128
0.153
0.201
0.229
0.259
0.292
0.361
0.437
0.523
0.614
0.704
V
13.4
13.7
14.5
17.0
18.2
18.7
19.6
21.5
23.5
23.9
27.7
29.5
31.4
33.2
36.8
40.4
44.3
47.9
51.6
A
298
290
276
235
220
205
184
172
157
147
123
119
111
102
93
89
80
75
68
0.021
0.022
0.024
0.033
0.038
0.040
0.040
0.047
0.056
0.054
0.075
0.083
0.094
0.109
0.132
0.152
0.185
0.213
0.253
R
D (2)
T
(3)
MAX.
10
-4
/°C
5.7
5.9
6.1
6.5
7.0
7.3
7.8
8.1
8.3
8.4
8.8
8.8
9.0
9.2
9.4
9.5
9.6
9.7
9.8
10/1000 μs
MAX.
V
9.1
9.5
10.2
11.8
12.5
13.3
15.7
17.2
18.8
20.4
23.6
25.2
26.7
28.3
31.4
34.5
37.8
40.9
44.0
DEVICE
TYPE
Notes
(1)
Pulse test: t
50 ms
p
(2)
To calculate maximum clamping voltage at other surge currents, use the following formula: V
CLmax.
= R
D
x I
PP
+ V
BRmax.
(3)
To calculate V
vs. junction temperature, use the following formula: V
BR
at T
J
= V
BR
at 25 °C x (1 +
T
x (T
J
- 25)
BR
(4)
V =
3.5 V at I = 25 A, pulse test: 300 µs pulse width
F
F
Revision: 18-Jun-14
Document Number: 89115
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMA6J5.0A thru SMA6J28A
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
(1)
Typical thermal resistance, junction to lead
Note
(1)
Mounted on minimum recommended pad layout
SYMBOL
R
JA
R
JL
VALUE
120
25
UNIT
°C/ W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMA6J5.0A-E3/61
SMA6J5.0A-E3/5A
UNIT WEIGHT (g)
0.064
0.064
PREFERRED PACKAGE CODE
61
5A
BASE QUANTITY
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
I
PPM
- Peak Pulse Current (%) I
RSM
100
150
t
r
= 10
µs
t
r
= 8
µs
Peak
Value
I
PPM
100
Half
Value
- I
PP
I
PPM
2
50
t
d
= 1000
µs
t
d
= 20
µs
t
d
0
1
10
100
1000
10 000
0
1.0
2.0
3.0
4.0
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where
the Peak Current
decays to 50 % of I
PPM
P
PPM
- Peak Pulse Power (kW)
10
1
0.1
0.1
Pulse Width (µs) - ½ I
PP
Exponential Waveform
Fig. 1 - Peak Pulse Power Rating Curve
t - Time (ms)
Fig. 3 - Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage (%)
100
10 000
C
J
- Junction Capacitance (pF)
Measured at Zero Bias
75
1000
Measured at Stand-off
Voltage V
WM
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
10
1
10
100
50
25
0
0
25
50
75
100
125
150
175
200
T
J
- Initial Temperature
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Reverse
Voltage
(V)
Fig. 4 - Typical Junction Capacitance
Revision: 18-Jun-14
Document Number: 89115
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMA6J5.0A thru SMA6J28A
www.vishay.com
Vishay General Semiconductor
Transient Thermal Impedance (°C/W)
1000
100
SMA6J5.0A to SMA6J8.0A
T
A
= 150 °C
Forward Current (A)
10
100
1
SMA6J8.5A to SMA6J28A
T
A
= 150 °C
10
0.1
SMA6J5.0A to SMA6J28A
T
A
= 25 °C
1
0.01
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0.1
0.001
0.01
0.1
1
10
100
1000
Forward
Voltage
(V)
Fig. 5 - Typical Forward Characteristics
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 18-Jun-14
Document Number: 89115
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000