SMAJ SERIES
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Built-in strain relief
- Excellent clamping capability
- Fast response time: Typically less than
1.0ps from 0 volt to BV min
- Typical IR less than 1μA above 10V
- 400 watts peak pulse power capability with a
10 / 1000
μs
waveform (300W above 78V)
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Suface Mount Transient Voltage Suppressor
DO-214AC (SMA)
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - Green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25℃, tp=1ms(Note 1)
Steady state power dissipation
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 25 A for
Unidirectional only
Operating junction temperature range
Storage temperature range
SYMBOL
P
PK
P
D
I
FSM
V
F
T
J
T
STG
Value
400
1
40
3.5
- 55 to +150
- 55 to +150
UNIT
Watts
Watts
A
Volts
O
O
C
C
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25℃ Per Fig. 2
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types SMAJ5.0 through Types SMAJ188
2. Electrical Characterstics Apply in Both Directions
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
R3
R2
SMAJxxxx
(Note 1)
Prefix "H"
M2
F3
F2
F4
N/A
E3
E2
Suffix "G"
PACKING CODE
GREEN COMPOUND
CODE
SMA
SMA
SMA
Folded SMA
Folded SMA
Folded SMA
Clip SMA
Clip SMA
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
7,500 / 13" Plastic reel
PACKAGE
PACKING
Note 1: "xxxx" defines voltage from 5.0V (SMAJ5.0) to 188V (SMAJ188)
Document Number: DS_D1405057
Version:K14
SMAJ SERIES
Taiwan Semiconductor
CREAT BY ART
EXAMPLE
PREFERRED P/N
SMAJ26A R3
SMAJ26A R3G
SMAJ26AHR3
PART NO.
SMAJ26A
SMAJ26A
SMAJ26A
H
AEC-Q101
QUALIFIED
PACKING CODE
R3
R3
R3
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
FIG.2 PULSE DERATING CURVE
125
P
PPM
, PEAK PULSE POWER, KW
10
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
TA = 25℃
100
75
50
25
0
0
25
50
75
100
125
150
175
200
1
0.1
0.1
1
10
100
1000
10000
tp, PULSE WIDTH, (uS)
T
A
, AMBIENT TEMPERATURE
(
o
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
IFSM, PEAK FORWARD SURGE CURRENT (A)
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
50
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
tr=10μs
Peak Value
IPPM
40
8.3ms Single Half Sine Wave
Half Value-IPPM/2
10/1000μs, WAVEFORM
as DEFINED by R.E.A.
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10000
CJ, JUNCTION CAPACITANCE (pF)
A
1000
MEASURED AT
ZERO BIAS
100
f=1.0MHz
Vsig=50mVp-p
10
1
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
MEASURED at
STAND-OFF
VOLTAGE,Vwm
Document Number: DS_D1405057
Version:K14
SMAJ SERIES
Taiwan Semiconductor
CREAT BY ART
Device
Marking
Code
AD
AE
AF
AG
AH
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
AY
AZ
BD
BE
BF
BG
BH
BK
BL
BM
BN
BP
BQ
BR
BS
BT
BU
BV
BW
BX
BY
BZ
CD
CE
CF
CG
Working
Peak
Reverse
Voltage
V
WM
(V)
5
5
6
6
6.5
6.5
7
7
7.5
7.5
8
8
8.5
8.5
9
9
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
Breakdown Voltage
VBR (V)
at I
T
Min
6.4
6.4
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10
10
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20
20
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
Max
7.3
7
8.15
7.37
8.82
7.98
9.51
8.6
10.30
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38
34.4
Test
Current
IT
(mA)
10
10
10
10
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Clamping
Voltage at IPPM
Vc(V)
(Note5)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
Maximum
Maximum
Reverse Leakage
Peak Pulse
Surge Current
I
PPM
@ V
WM
(A)(Note5)
ID (uA)
41.7
43.5
35.1
38.8
32.5
35.7
30.1
33.3
28.0
31.0
26.7
29.4
25.2
27.8
23.7
26.0
21.3
23.5
19.9
22.0
18.2
20.1
16.8
18.6
15.5
17.2
14.9
16.4
13.9
15.4
13.1
14.5
12.4
13.7
11.2
12.3
10.2
11.3
9.3
10.3
8.6
9.5
8.0
8.8
800
800
800
800
500
500
200
200
100
100
50
50
10
10
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Device
SMAJ5.0
SMAJ5.0A
SMAJ6.0
SMAJ6.0A
SMAJ6.5
SMAJ6.5A
SMAJ7.0
SMAJ7.0A
SMAJ7.5
SMAJ7.5A
SMAJ8.0
SMAJ8.0A
SMAJ8.5
SMAJ8.5A
SMAJ9.0
SMAJ9.0A
SMAJ10
SMAJ10A
SMAJ11
SMAJ11A
SMAJ12
SMAJ12A
SMAJ13
SMAJ13A
SMAJ14
SMAJ14A
SMAJ15
SMAJ15A
SMAJ16
SMAJ16A
SMAJ17
SMAJ17A
SMAJ18
SMAJ18A
SMAJ20
SMAJ20A
SMAJ22
SMAJ22A
SMAJ24
SMAJ24A
SMAJ26
SMAJ26A
SMAJ28
SMAJ28A
Document Number: DS_D1405057
Version:K14
SMAJ SERIES
Taiwan Semiconductor
CREAT BY ART
Device
Marking
Code
CH
CK
CL
CM
CN
CP
CQ
CR
CS
CT
CU
CV
CW
CX
CY
CZ
RD
RE
RF
RG
RH
RK
RL
RM
RN
RP
RQ
RR
RS
RT
RU
RV
RW
RX
RY
RZ
SD
SE
SF
SG
SH
SK
SL
SM
Working
Peak
Reverse
Voltage
V
WM
(V)
30
30
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
Breakdown Voltage
VBR (V)
at I
T
Min
33.3
33.3
36.7
36.7
40
40
44.4
44.4
47.8
47.8
50
50
53.3
53.3
56.7
56.7
60
60
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
Max
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
Test
Current
I
T
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Clamping
Voltage at I
PPM
Vc(V)
(Note5)
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
266
243
Maximum
Maximum
Reverse Leakage
Peak Pulse
Surge Current
I
PPM
@ V
WM
(A) (Note5)
I
D
(uA)
7.5
8.3
6.8
7.5
6.2
6.9
5.6
6.2
5.2
5.8
5.0
5.5
4.7
5.2
4.4
4.9
4.2
4.6
3.9
4.3
3.7
4.1
3.5
3.9
3.2
3.5
3.0
3.3
2.9
3.2
2
2.2
1.9
2.1
1.7
1.9
1.6
1.7
1.4
1.6
1.3
1.5
1.1
1.3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Device
SMAJ30
SMAJ30A
SMAJ33
SMAJ33A
SMAJ36
SMAJ36A
SMAJ40
SMAJ40A
SMAJ43
SMAJ43A
SMAJ45
SMAJ45A
SMAJ48
SMAJ48A
SMAJ51
SMAJ51A
SMAJ54
SMAJ54A
SMAJ58
SMAJ58A
SMAJ60
SMAJ60A
SMAJ64
SMAJ64A
SMAJ70
SMAJ70A
SMAJ75
SMAJ75A
SMAJ78
SMAJ78A
SMAJ85
SMAJ85A
SMAJ90
SMAJ90A
SMAJ100
SMAJ100A
SMAJ110
SMAJ110A
SMAJ120
SMAJ120A
SMAJ130
SMAJ130A
SMAJ150
SMAJ150A
Document Number: DS_D1405057
Version:K14
SMAJ SERIES
Taiwan Semiconductor
CREAT BY ART
Device
Marking
Code
SN
SP
SQ
SR
ST
SS
Working
Peak
Reverse
Voltage
V
WM
(V)
160
160
170
170
188
188
Breakdown Voltage
VBR (V)
at I
T
Min
178
178
189
189
209
209
Max
218
197
231
209
255
231
Test
Current
I
T
(mA)
1
1
1
1
1
1
Maximum
Clamping
Voltage at I
PPM
Vc(V)
(Note5)
287
259
304
275
344
328
Maximum
Maximum
Reverse Leakage
Peak Pulse
Surge Current
I
PPM
@ V
WM
(A) (Note5)
I
D
(uA)
1
1.2
1
1.1
0.9
0.91
1
1
1
1
1
1
Device
SMAJ160
SMAJ160A
SMAJ170
SMAJ170A
SMAJ188
SMAJ188A
Notes:
1. Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25℃ per Fig. 2
2. Mounted on 5 x 5mm copper pads to each terminal
3. Lead temperature at T
L
=75℃
4. Measure on 8.3ms single half sine-wave duty cycle=4 pulses per minutes maximum
5. Peak pulse power waveform is 10/1000
μs
6. For Bi-Directional devices having V
R
of 10 volts and under, the I
R
limit is double.
Document Number: DS_D1405057
Version:K14
51单片机
