首页 > 器件类别 > 分立半导体 > 二极管

SMAJ75HE3/61

TVS DIODE 75V 134V DO214AC

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
Reach Compliance Code
not_compliant
ECCN代码
EAR99
击穿电压标称值
92.65 V
最大钳位电压
134 V
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码
e3
湿度敏感等级
1
极性
UNIDIRECTIONAL
最大重复峰值反向电压
75 V
表面贴装
YES
端子面层
Matte Tin (Sn)
Base Number Matches
1
文档预览
SMAJ5.0 thru SMAJ188CA
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 400 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 % (300 W above 78 V)
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
V
WM
P
PPM
I
FSM
T
J
max.
5.0 V to 188 V
400 W, 300 W
40 A
150 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional use C or CA suffix (e.g. SMAJ10C,
SMAJ10CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1)(2)
(Fig. 1)
Peak pulse current with a waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2. Rating is 300 W above 78 V
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PPM
I
FSM
T
J
, T
STG
VALUE
400
See next table
40
- 55 to + 150
UNIT
W
A
A
°C
Document Number: 88390
Revision: 29-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
SMAJ5.0 thru SMAJ188CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE MARKING
CODE
UNI
SMAJ5.0
SMAJ5.0A
(5)
SMAJ6.0
SMAJ6.0A
SMAJ6.5
SMAJ6.5A
SMAJ7.0
SMAJ7.0A
SMAJ7.5
SMAJ7.5A
SMAJ8.0
SMAJ8.0A
SMAJ8.5
SMAJ8.5A
SMAJ9.0
SMAJ9.0A
SMAJ10
SMAJ10A
SMAJ11
SMAJ11A
SMAJ12
SMAJ12A
SMAJ13
SMAJ13A
SMAJ14
SMAJ14A
SMAJ15
SMAJ15A
SMAJ16
SMAJ16A
SMAJ17
SMAJ17A
SMAJ18
SMAJ18A
SMAJ20
SMAJ20A
SMAJ22
SMAJ22A
SMAJ24
SMAJ24A
SMAJ26
SMAJ26A
SMAJ28
SMAJ28A
SMAJ30
SMAJ30A
SMAJ33
SMAJ33A
SMAJ36
SMAJ36A
SMAJ40
AD
AE
AF
AG
AH
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
AY
AZ
BD
BE
BF
BG
BH
BK
BL
BM
BN
BP
BQ
BR
BS
BT
BU
BV
BW
BX
BY
BZ
CD
CE
CF
CG
CH
CK
CL
CM
CN
CP
CQ
BI
WD
WE
WF
WG
WH
WK
WL
WM
WN
WP
WQ
WR
WS
WT
WU
WV
WW
WX
WY
WZ
XD
XE
XF
XG
XH
XK
XL
XM
XN
XP
XQ
XR
XS
XT
XU
XV
XW
XX
XY
XZ
YD
YE
YF
YG
YH
YK
YL
YM
YN
YP
YQ
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
MAX.
7.82
7.07
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
TEST
CURRENT
I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
33
33
36
36
40
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(µA)
(3)
800
800
800
800
500
500
200
200
100
100
50
50
10
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(2)
41.7
43.5
35.1
38.8
32.5
35.7
30.1
33.3
28.0
31.0
26.7
29.4
25.2
27.8
23.7
26.0
21.3
23.5
19.9
22.0
18.2
20.1
16.8
18.6
15.5
17.2
14.9
16.4
13.9
15.4
13.1
14.5
12.4
13.7
11.2
12.3
10.2
11.3
9.3
10.3
8.6
9.5
8.0
8.8
7.5
8.3
6.8
7.5
6.2
6.9
5.6
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
DEVICE TYPE
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88390
Revision: 29-Oct-08
SMAJ5.0 thru SMAJ188CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE MARKING
CODE
UNI
SMAJ40A
SMAJ43
SMAJ43A
SMAJ45
SMAJ45A
SMAJ48
SMAJ48A
SMAJ51
SMAJ51A
SMAJ54
SMAJ54A
SMAJ58
SMAJ58A
SMAJ60
SMAJ60A
SMAJ64
SMAJ64A
SMAJ70
SMAJ70A
SMAJ75
SMAJ75A
SMAJ78
SMAJ78A
SMAJ85
SMAJ85A
SMAJ90
SMAJ90A
SMAJ100
SMAJ100A
SMAJ110
SMAJ110A
SMAJ120
SMAJ120A
SMAJ130
SMAJ130A
SMAJ150
SMAJ150A
SMAJ160
SMAJ160A
SMAJ170
SMAJ170A
SMAJ188
SMAJ188A
Notes:
(1) Pulse test: t
p
50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having V
WM
of 10 V and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMAJ5.0CA, the maximum V
BR
is 7.25 V
(6) V
F
= 3.5 V at I
F
= 25 A (uni-directional only)
Document Number: 88390
Revision: 29-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
CR
CS
CT
CU
CV
CW
CX
CY
CZ
RD
RE
RF
RG
RH
RK
RL
RM
RN
RP
RQ
RR
RS
RT
RU
RV
RW
RX
RY
RZ
VD
SE
SF
VG
SH
VK
SL
VM
SN
SP
SQ
SR
ST
SS
BI
YR
YS
YT
YU
YV
YW
YX
YY
YZ
ZD
ZE
ZF
ZG
ZH
ZK
ZL
ZM
ZN
ZP
ZQ
ZR
ZS
ZT
ZU
ZV
ZW
ZX
ZY
ZZ
VD
VE
VF
VG
VH
VK
VL
VM
VN
VP
VQ
VR
VT
VS
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
209
209
MAX.
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
255
231
TEST
CURRENT
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
188
188
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(µA)
(3)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(2)
6.2
5.2
5.8
5.0
5.5
4.7
5.2
4.4
4.9
4.2
4.6
3.9
4.3
3.7
4.1
3.5
3.9
3.2
3.5
3.0
3.3
2.9
3.2
2.0
2.2
1.9
2.1
1.7
1.9
1.5
1.7
1.4
1.6
1.3
1.4
1.1
1.2
1.0
1.2
0.99
1.09
0.90
0.91
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
344
328
DEVICE TYPE
SMAJ5.0 thru SMAJ188CA
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to lead
Note:
(1) Mounted on minimum recommended pad layout
(1)
SYMBOL
R
θJA
R
θJL
VALUE
120
30
UNIT
°C/W
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMAJ5.0A-E3/61
SMAJ5.0A-E3/5A
SMAJ5.0AHE3/61
(1)
SMAJ5.0AHE3/5A
(1)
UNIT WEIGHT (g)
0.064
0.064
0.064
0.064
PREFERRED PACKAGE CODE
61
5A
61
5A
BASE QUANTITY
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°C
unless otherwise noted)
100
150
I
PPM
- Peak Pulse Current,
%
I
RSM
P
PPM
- Peak Pulse Power (kW)
Non-Repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
10
t
r
= 10
µs
Peak
Value
I
PPM
T
J
= 25 °C
Pulse
Width
(t
d
)
is defined as the Point
where
the Peak Current
decays to 50
%
of I
PPM
100
SMAJ85 -
SMAJ188
1
SMAJ5.0 -
SMAJ78
Half
Value
- I
PP
I
PPM
2
50
10/1000
µs Waveform
as defined
by
R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1
µs
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
t
d
- Pulse
Width
(s)
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage,
%
100
10 000
75
C
J
- Junction Capacitance (pF)
1000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Measured at
Stand-Off
Voltage V
WM
Uni-Directional
50
100
25
Bi-Directional
0
0
25
50
75
100
125
150
175
200
10
1
10
100
200
T
J
- Initial Temperature (°C)
V
WM
- Reverse Stand-Off
Voltage
(V)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 4. Typical Junction Capacitance
www.vishay.com
4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88390
Revision: 29-Oct-08
SMAJ5.0 thru SMAJ188CA
Vishay General Semiconductor
1000
200
Transient Thermal Impedance (°C/W)
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
100
100
50
10
1
0.001
10
0.01
0.1
1.0
10
100
1000
1
5
10
50
100
t
p
- Pulse Duration (s)
Number
of Cycles at 60 Hz
Figure 5. Typical Transient Thermal Impedance
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 88390
Revision: 29-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
5
查看更多>
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消