SMBG5.0A thru SMBG188CA
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
•
•
•
•
•
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
AEC-Q101 qualified
Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-215AA (SMBG)
•
•
•
•
•
•
PRIMARY CHARACTERISTICS
V
WM
V
BR
(uni-directional)
V
BR
(bi-directional)
P
PPM
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
5.0 V to 188 V
6.4 V to 231 V
6.4 V to 231 V
600 W
100 A
150 °C
Uni-directional, bi-directional
DO-215AA (SMBG)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case:
DO-215AA (SMBG)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SMBG10CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)(2)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PPM
I
FSM
T
J
, T
STG
VALUE
600
See next table
100
- 55 to + 150
UNIT
W
A
A
°C
Revision: 10-Dec-13
Document Number: 88456
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMBG5.0A thru SMBG188CA
www.vishay.com
Vishay General Semiconductor
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100
111
122
133
144
167
178
189
209
MAX.
7.07
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86.0
92.1
95.8
104
111
123
135
147
159
185
197
209
231
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
GULL WING
(+)
SMBG5.0A
(5)
(+)
SMBG6.0A
(+)
SMBG6.5A
(+)
SMBG7.0A
(+)
SMBG7.5A
(+)
SMBG8.0A
(+)
SMBG8.5A
(+)
SMBG9.0A
(+)
SMBG10A
(+)
SMBG11A
(+)
SMBG12A
(+)
SMBG13A
(+)
SMBG14A
(+)
SMBG15A
(+)
SMBG16A
(+)
SMBG17A
(+)
SMBG18A
(+)
SMBG20A
(+)
SMBG22A
(+)
SMBG24A
(+)
SMBG26A
(+)
SMBG28A
(+)
SMBG30A
(+)
SMBG33A
(+)
SMBG36A
(+)
SMBG40A
(+)
SMBG43A
(+)
SMBG45A
(+)
SMBG48A
(+)
SMBG51A
(+)
SMBG54A
(+)
SMBG58A
(+)
SMBG60A
(+)
SMBG64A
(+)
SMBG70A
(+)
SMBG75A
(+)
SMBG78A
(+)
SMBG85A
(+)
SMBG90A
(+)
SMBG100A
(+)
SMBG110A
(+)
SMBG120A
(+)
SMBG130A
(+)
SMBG150A
(+)
SMBG160A
(+)
SMBG170A
DEVICE MARKING
CODE
UNI
KE
KG
KK
KM
KP
KR
KT
KV
KX
KZ
LE
LG
LK
LM
LP
LR
LT
LV
LX
LZ
ME
MG
MK
MM
MP
MR
MT
MV
MX
MZ
NE
NG
NK
NM
NP
NR
NT
NV
NX
NZ
PE
PG
PK
PM
PP
PR
PS
BI
KE
KG
AK
KM
AP
AR
AT
AV
AX
KZ
BE
LG
BK
BM
LM
LR
BT
LV
BX
BZ
CE
MG
CK
CM
CP
CR
CT
MV
MX
MZ
NE
NG
NK
NM
NP
NR
NT
NV
NX
NZ
PE
PG
PK
PM
PP
PR
PS
TEST
CURRENT
I
T
(mA)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
188
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
(3)
800
800
500
200
100
50
20
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(2)
65.2
58.3
53.6
50.0
46.5
44.1
41.7
39.0
35.3
33.0
30.2
27.9
25.9
24.6
23.1
21.7
20.5
18.5
16.9
15.4
14.3
13.2
12.4
11.3
10.3
9.3
8.6
8.3
7.8
7.3
6.9
6.4
6.2
5.8
5.3
5.0
4.8
4.4
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.2
2.0
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
126
137
146
162
177
193
209
243
259
275
328
SMBG188A
Notes
(1)
Pulse test: t
50 ms
p
(2)
Surge current waveform per fig. 3 and derate per fig. 2
(3)
For bi-directional types having V
WM
of 10 V and less, the I
D
limit is doubled
(4)
All terms and symbols are consistent with ANSI/IEEE C62.35
(5)
For the bi-directional SMBG5.0CA, the maximum V
BR
is 7.25 V
(6)
V = 3.5 V at I = 50 A (uni-directional only)
F
F
(+)
Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Revision: 10-Dec-13
Document Number: 88456
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMBG5.0A thru SMBG188CA
www.vishay.com
Vishay General Semiconductor
SYMBOL
R
JA
R
JL
VALUE
100
20
UNIT
°C/ W
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
(1)
Typical thermal resistance, junction to lead
Note
(1)
Mounted on minimum recommended pad layout
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMBG5.0A-E3/52
SMBG5.0A-E3/5B
SMBG5.0AHE3/52
(1)
SMBG5.0AHE3/5B
(1)
(1)
UNIT WEIGHT (g)
0.096
0.096
0.096
0.096
PREFERRED PACKAGE CODE
52
5B
52
5B
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
150
T
J
= 25 °C
Pulse
Width
(t
d
)
is defined as the Point
where
the Peak Current
decays to 50 % of I
PPM
I
PPM
- Peak Pulse Current, % I
RSM
P
PPM
- Peak Pulse Power (kW)
t
r
= 10 µs
Peak Value
I
PPM
10
100
Half Value - I
PP
I
PPM
2
50
10/1000 µs
Waveform
as defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
t
d
- Pulse
Width
(s)
t - Time (ms)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 3 -
Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
6000
75
C
J
- Junction Capacitance (pF)
Measured at
Zero Bias
1000
50
100
25
V
R
, Measured at
Stand-Off
Voltage V
WM
Uni-Directional
Bi-Directional
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
200
0
0
25
50
75
100
125
150
175
200
10
1
10
T
J
- Initial Temperature (°C)
V
WM
- Reverse Stand-Off Voltage (V)
Fig. 2 -
Pulse Power or Current vs. Initial Junction Temperature
Fig. 4 -
Typical Junction Capacitance
Revision: 10-Dec-13
Document Number: 88456
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMBG5.0A thru SMBG188CA
www.vishay.com
Vishay General Semiconductor
200
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
100
Transient Thermal Impedance (°C/W)
10
1.0
0.1
0.001
Peak Forward Surge Current (A)
0.01
0.1
1
10
100
1000
10
1
10
100
t
p
- Pulse Duration (s)
Number
of Cycles at 60 Hz
Fig. 5 -
Typical Transient Thermal Impedance
Fig. 6 -
Maximum Non-Repetitive Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-215AA (SMBG)
Cathode Band
Mounting Pad Layout
0.165 (4.19)
0.083 (2.10)
0 .077 (1.96)
0.155 (3.94)
0.130 (3.30)
0.085 (2.16)
0.060 (1.27)
0.180 (4.57)
0.160 (4.06)
0.016 (0.41)
0.006 (0.15)
0.058 (1.47)
0.020 0.038 (0.97)
(0.51) MAX.
0.255 (6.48)
0.235 (5.97)
0.095 (2.41)
0.075 (1.90)
0.008 (0.20)
0.002 (0.05)
0.030 (0.76)
0.015 (0.38)
Seating Plane
Revision: 10-Dec-13
Document Number: 88456
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000