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SMBJ26A-T3

Trans Voltage Suppressor Diode, 600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMB, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Sangdest Microelectronics (Nanjing) Co Ltd

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Sangdest Microelectronics (Nanjing) Co Ltd
包装说明
R-PDSO-C2
Reach Compliance Code
unknown
其他特性
UL RECOGNIZED
最大击穿电压
31.94 V
最小击穿电压
28.9 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-214AA
JESD-30 代码
R-PDSO-C2
湿度敏感等级
1
最大非重复峰值反向功率耗散
600 W
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
认证状态
Not Qualified
最大重复峰值反向电压
26 V
表面贴装
YES
技术
AVALANCHE
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
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Dim
A
B
C
D
E
F
G
H
Min
Max
Min
Max
3.30
3.94
4.06
4.70
1.91
2.11
0.152 0.305
5.08
5.59
2.13
2.44
0.051 0.203
0.76
1.27
in mm
0.130 0.155
0.160 0.185
0.075 0.083
0.006 0.012
0.2 0.220
0.084 0.096
0.002 0.008
0.029 0.05
In inch

                                                 

































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100
6,000
C
J
, J UNC T ION C APAC ITANC E (pF )
Measured at
Zero Bias
P E AK P ULS E DE R AT ING IN % OF
P E AK P OWE R OR C UR R E NT
75
1,000
50
100
25
10 X 1000 Waveform
as defined by R E A
V
R
, Measured at
S tand-Off
Voltage, V
WM
Uni-Directional
Bi-Directional
T
J
= 25 C
f = 1.0MHz
Vsig = 50mVp-p
100
200
0
0
25
50
75
100 125 150 175 200
T
A
, AMB IE NT T E MP E R AT UR E (
°
C )
F ig. 1 P uls e Derating C urve
100
10
1
10
V
WM
, S TANDOF F V OLTAG E (V )
F ig. 2 Typical J unction C apacitance
P
d
, P E AK P ULS E P OWE R (kW)
T
j
= 25
°
C
Non R epetitive
P uls e Waveform
10
1.0
0.1
0.1
1.0
10
100
1000
10000
t
p
P ULS E WIDT H (
m
s )
F ig. 3 P uls e R ating C urve
I
P
, P E AK P ULS E C
p
UR R E NT (%I
p
)
t
r
= 10
m
s
100
P eak Value I
pp
Half Value I
pp
/2
50
t
p
0
10 X 1000 Waveform
as defined by R .E .A.
0
1
2
3
t, T IME (ms )
F ig. 4 P uls e Waveform
S MB J S E R IE S
2 of 4
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SENSITRON
SEMICONDUCTOR




DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
• 



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