SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• ± 3.5 %: very tight V
BR
tolerance
• Low leakage current
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
DO-214AA (SMBJ)
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
PRIMARY CHARACTERISTICS
V
BR
(uni-directional)
V
BR
(bi-directional)
V
WM
(uni-directional)
V
WM
(bi-directional)
P
PPM
P
D
at T
M
= 50 °C
P
D
at T
A
= 25 °C
T
J
max.
Polarity
Package
6.5 V to 228 V
6.5 V to 145 V
5.0 V to 188 V
5.0 V to 120 V
600 W
5.0 W
1.0 W
150 °C
Uni-directional, bi-directional
DO-214AA (SMBJ)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFETs, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case:
DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
industrial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
DEVICES FOR BI-DIRECTIONAL APPLICATIONS
For bi-directional devices use CD suffix (e.g. SMBJ5.0CD).
Electrical characteristics apply in both directions.
Polarity:
for uni-directional types the band denotes cathode
end, no cathode band on bi-directional types
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
Peak pulse current
Power dissipation
with a 10/1000 μs waveform
with a 10/1000 μs waveform
T
M
= 50 °C
T
A
= 25 °C
SYMBOL
P
PPM (1)
I
PPM (1)
P
D (2)
P
D (3)
T
J
, T
STG
VALUE
600
See next table
5.0
1.0
-55 to +150
UNIT
W
A
W
°C
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Power dissipation mounted on infinite heatsink
(3)
Power dissipation mounted on minimum recommended pad layout
Revision: 10-Sep-15
Document Number: 87606
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD
www.vishay.com
Vishay General Semiconductor
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
MAX.
6.50
6.97
6.77
7.27
7.33
7.87
7.90
8.48
8.46
9.08
9.03
9.69
9.57
10.3
10.2
10.9
11.3
12.1
12.4
13.3
13.5
14.5
14.6
15.7
15.8
17.0
17.0
18.2
18.1
19.4
19.2
20.6
20.3
21.8
22.5
24.2
24.8
26.6
27.1
29.1
29.3
31.5
31.6
33.9
33.8
36.3
37.3
40.0
40.6
43.6
45.1
48.4
48.5
52.1
50.8
54.5
54.1
58.1
57.6
61.8
60.9
65.4
65.4
70.2
67.7
72.7
72.2
77.5
79.0
84.8
84.6
90.8
88.1
94.4
95.7
103
102
109
113
121
124
133
135
145
146
157
170
182
181
194
192
206
212
228
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE TYPE
DEVICE
MARKING
CODE
UNI
6AA
6AB
6AC
6AD
6AE
6AF
6AG
6AH
6AK
6AL
6AM
6AN
6AP
6AQ
6AR
6AS
6AT
6AU
6AV
6AW
6AX
6AY
6AZ
6BA
6BB
6BC
6BD
6BE
6BF
6BG
6BH
6BK
6BL
6BM
6BN
6BP
6BQ
6BR
6BS
6BT
6BU
6BV
6BW
6BX
6BY
6BZ
6CA
BI
6AA
6AB
6AC
6AD
6AE
6AF
6AG
6AH
6AK
6AL
6AM
6AN
6AP
6AQ
6AR
6AS
6AT
6AU
6AV
6AW
6AX
6AY
6AZ
6BA
6BB
6BC
6BD
6BE
6BF
6BG
6BH
6BK
6BL
6BM
6BN
6BP
6BQ
6BR
6BS
6BT
6BU
6BV
-
-
-
-
-
TEST
CURRENT
I
T
(mA)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
188
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
(2)
500
500
300
150
75
35
15
5.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(3)
65.9
58.9
54.5
50.8
47.2
44.8
42.2
39.7
35.9
33.5
30.6
28.3
26.2
25.0
23.4
22.1
20.8
18.8
17.1
15.6
14.5
13.4
12.6
11.5
10.5
9.43
8.76
8.40
7.90
7.40
7.00
6.50
6.28
5.88
5.40
5.06
4.86
4.46
4.17
3.77
3.45
3.15
2.94
2.53
2.34
2.23
2.03
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
9.1
10.2
11.0
11.8
12.7
13.4
14.3
15.1
16.7
17.9
19.6
21.2
22.9
24.0
25.6
27.2
28.8
32.0
35.1
38.4
41.6
44.7
47.7
52.5
57.3
63.6
68.5
71.6
76.3
81.2
85.9
92.3
95.5
102
111
119
124
135
144
159
174
190
206
239
256
270
301
(+)SMBJ5.0D
(+)SMBJ6.0D
(+)SMBJ6.5D
(+)SMBJ7.0D
(+)SMBJ7.5D
(+)SMBJ8.0D
(+)SMBJ8.5D
(+)SMBJ9.0D
(+)SMBJ10D
(+)SMBJ11D
(+)SMBJ12D
(+)SMBJ13D
(+)SMBJ14D
(+)SMBJ15D
(+)SMBJ16D
(+)SMBJ17D
(+)SMBJ18D
(+)SMBJ20D
(+)SMBJ22D
(+)SMBJ24D
(+)SMBJ26D
(+)SMBJ28D
(+)SMBJ30D
(+)SMBJ33D
(+)SMBJ36D
(+)SMBJ40D
(+)SMBJ43D
(+)SMBJ45D
(+)SMBJ48D
(+)SMBJ51D
(+)SMBJ54D
(+)SMBJ58D
(+)SMBJ60D
(+)SMBJ64D
(+)SMBJ70D
(+)SMBJ75D
(+)SMBJ78D
(+)SMBJ85D
(+)SMBJ90D
(+)SMBJ100D
(+)SMBJ110D
(+)SMBJ120D
(+)SMBJ130D
(+)SMBJ150D
(+)SMBJ160D
(+)SMBJ170D
SMBJ188D
Notes
• All terms and symbols are consistent with ANSI/IEEE C62.35
(1)
Pulse test: t
50 ms
p
(2)
For bi-directional types having V
WM
of 12 V and less, the I
D
limit is doubled
(3)
Surge current waveform per fig. 3 and derate per fig. 2
(+) Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional device
Revision: 10-Sep-15
Document Number: 87606
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to mount
Notes
(1)
Mounted on minimum recommended pad layout
(2)
Mounted on 5.0 mm x 5.0 mm copper pad area
SYMBOL
R
JA
(1)
R
JA
(2)
R
JM
VALUE
125
100
20
°C/W
UNIT
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMBJ5.0D-M3/H
SMBJ5.0D-M3/I
UNIT WEIGHT (g)
0.096
0.096
PREFERRED PACKAGE CODE
H
I
BASE QUANTITY
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
10
150
t
r
= 10 μs
T
J
= 25
°C
pulse width (t
d
) is de ned
as the point where the peak
current decays to 50 % of I
PPM
I
PPM
- Peak Pulse Current, % I
RSM
P
PPM
- Peak Pulse Power (kW)
100
Peak value I
PPM
Half value - I
PP
/2
1
50
10/1000 μs waveform
as de ned by R.E.A.
t
d
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.2" x 0.2" (5.0 mm x 5.0 mm)
copper pad areas
0.1
10
100
1000
10 000
0
t
d
- Pulse Width (μs)
Fig. 1 - Peak Pulse Power Rating Curve
t
p
- Time (ms)
Fig. 3 - Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
10000
75
C
J
- Junction Capacitance (pF)
Measured at zero bias
1000
50
100
Measured at
stand-off
voltage, V
WM
10
Uni-Directional
Bi-Directional
1
1
10
T
J
= 25 °C
f = 1.0 MHz
100
25
0
0
25
50
75
100
125
150
T
J
- Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
V
WM
- Reverse
Stand-Off
Voltage (V)
Fig. 4 - Typical Junction Capacitance
Revision: 10-Sep-15
Document Number: 87606
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD
www.vishay.com
Vishay General Semiconductor
Transient Thermal Impedance (°C/W)
1000
Junction to Ambient
Mounted on minimum
recommend pad area
P
M(av)
-
Steady State
Power Dissipation (W)
6
T
A
=T
M
mounted on inifinite heatsink
5
4
3
2
1
0
0
25
50
75
100
125
150
Mounted on minimum
recommend pad layout
100
10
1
Mounted on 5.0 x 5.0 mm
copper pad area
0.1
0.001
0.1
10
1000
T
A
- Ambient Temperature (°C)
Fig. 5 - Power Dissipation Derating Curve
t
p
- Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Note
• Fig.1, 10 000 μs P
ppm
is actual test for V
WM
60 V types, over 60 V types 10 000 μs P
ppm
is curve extensional value.
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMBJ)
Cathode Band
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
Mounting Pad Layout
0.085 (2.159)
MAX.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.086 (2.18)
MIN.
0.060 (1.52)
MIN.
0.096 (2.44)
0.084 (2.13)
0.220 REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 10-Sep-15
Document Number: 87606
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000
