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SMBJ43A-13

Trans Voltage Suppressor Diode, 600W, 43V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2

器件类别:分立半导体    二极管   

厂商名称:Diodes Incorporated

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Diodes Incorporated
包装说明
R-PDSO-C2
针数
2
Reach Compliance Code
not_compliant
ECCN代码
EAR99
最大击穿电压
54.9 V
最小击穿电压
47.8 V
击穿电压标称值
51.35 V
最大钳位电压
69.4 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
R-PDSO-C2
JESD-609代码
e0
湿度敏感等级
1
最大非重复峰值反向功率耗散
600 W
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
235
极性
UNIDIRECTIONAL
最大功率耗散
5 W
认证状态
Not Qualified
最大重复峰值反向电压
43 V
表面贴装
YES
技术
AVALANCHE
端子面层
Tin/Lead (Sn85Pb15)
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
10
文档预览
 
Green
SMBJ5.0(C)A - SMBJ170(C)A
Please click here to visit our online spice models database.
600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Features
600W Peak Pulse Power Dissipation
5.0V - 170V Standoff Voltages
Glass Passivated Die Construction
Uni- and Bi-Directional Versions Available
Excellent Clamping Capability
Fast Response Time
Lead Free Finish/RoHS Compliant (Note 1)
Green Molding Compound (No Halogen and Antimony)
(Note 2)
Mechanical Data
Case: SMB
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Lead Free Plating (Matte Tin Finish). Solderable per
MIL-STD-202, Method 208
Polarity Indicator: Cathode Band (Note: Bi-directional devices
have no polarity indicator.)
Marking: Information: See Page 4
Ordering Information: See Page 4
Weight: 0.1 grams (approximate)
Top View
Bottom View
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
(Note 3)
P
PK
P
der
I
FSM
PM
(AV)
V
BR
<100V
V
BR
100V
V
F
Value
600
4.8
100
5.0
3.5
5.0
Unit
W
W/°C
A
W
V
V
Peak Pulse Power Dissipation
(Non repetitive current pulse derated above T
A
= 25° C)
Peak Power Derating Above 25°C
Peak Forward Surge Current, 8.3ms Single Half Sine Wave Superimposed
on Rated Load (Notes 3, 4, & 5)
Steady State Power Dissipation @ T
L
= 75°C
Instantaneous Forward Voltage @ I
PP
= 35A
(Notes 3, 4, & 5)
Thermal Characteristics
Characteristic
Operating Temperature Range
Storage Temperature Range
Notes:
Symbol
T
J
T
STG
Value
-55 to +150
-55 to +175
Unit
°C
°C
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at http://www.diodes.com/quality/lead_free.html.
2. No purposefully added lead. Halogen and Antimony free.
3. Valid provided that terminals are kept at ambient temperature.
4. Measured with 8.3ms single half sine-wave. Duty cycle = 4 pulses per minute maximum.
5. Unidirectional units only.
SMBJ5.0(C)A - SMBJ170(C)A
Document number: DS19002 Rev. 17 - 2
1 of 5
www.diodes.com
June 2009
© Diodes Incorporated
SMBJ5.0(C)A - SMBJ170(C)A
Electrical Characteristics
Part Number
Add C For Bi-
Directional
(Note 6)
See Note 4
SMBJ5.0(C)A
SMBJ6.0(C)A
SMBJ6.5(C)A
SMBJ7.0(C)A
SMBJ7.5(C)A
SMBJ8.0(C)A
SMBJ8.5(C)A
SMBJ9.0(C)A
SMBJ10(C)A
SMBJ11(C)A
SMBJ12(C)A
SMBJ13(C)A
SMBJ14(C)A
SMBJ15(C)A
SMBJ16(C)A
SMBJ17(C)A
SMBJ18(C)A
SMBJ20(C)A
SMBJ22(C)A
SMBJ24(C)A
SMBJ26(C)A
SMBJ28(C)A
SMBJ30(C)A
SMBJ33(C)A
SMBJ36(C)A
SMBJ40(C)A
SMBJ43(C)A
SMBJ45(C)A
SMBJ48(C)A
SMBJ51(C)A
SMBJ54(C)A
SMBJ58(C)A
SMBJ60(C)A
SMBJ64(C)A
SMBJ70(C)A
SMBJ75(C)A
SMBJ78(C)A
SMBJ85(C)A
SMBJ90(C)A
SMBJ100(C)A
SMBJ110(C)A
SMBJ120(C)A
SMBJ130(C)A
SMBJ150(C)A
SMBJ160(C)A
SMBJ170(C)A
Notes:
@T
A
= 25°C unless otherwise specified
Max. Clamping
Voltage @ I
pp
V
C
(V)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103.0
113.0
121.0
126.0
137.0
146.0
162.0
177.0
193.0
209.0
243.0
259.0
275.0
Max. Peak Pulse
Current
I
pp
(A)
65.2
58.3
53.6
50.0
46.5
44.1
41.7
39.0
35.3
33.0
30.2
27.9
25.8
24.0
23.1
21.7
20.5
18.5
16.9
15.4
14.2
13.2
12.4
11.3
10.3
9.3
8.6
8.3
7.7
7.3
6.9
6.4
6.2
5.8
5.3
4.9
4.7
4.4
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.2
Reverse
Standoff
Voltage
V
RWM
(V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
33.0
36.0
40.0
43.0
45.0
48.0
51.0
54.0
58.0
60.0
64.0
70.0
75.0
78.0
85.0
90.0
100.0
110.0
120.0
130.0
150.0
160.0
170.0
Breakdown
Max. Reverse
Test
Voltage
Leakage @ V
RWM
Current
V
BR
@ I
T
(Note 7)
(Note 8)
Min (V) Max (V)
6.40
7.23
6.67
7.67
7.22
8.30
7.78
8.95
8.33
9.58
8.89
10.23
9.44
10.82
10.00
11.50
11.10
12.80
12.20
14.40
13.30
15.30
14.40
16.50
15.60
17.90
16.70
19.20
17.80
20.50
18.90
21.70
20.00
23.30
22.20
25.50
24.40
28.00
26.70
30.70
28.90
33.20
31.10
35.80
33.30
38.30
36.70
42.20
40.00
46.00
44.40
51.10
47.80
54.90
50.00
57.50
53.30
61.30
56.70
65.20
60.00
69.00
64.40
74.60
66.70
76.70
71.10
81.80
77.80
89.50
83.30
95.80
86.70
99.70
94.40
108.20
100.0
115.50
111.0
128.00
122.0
140.00
133.0
153.00
144.0
165.50
167.0
192.50
178.0
205.00
189.0
217.50
I
T
(mA)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
I
R
(μA)
800
800
500
200
100
50
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Marking Code
BI-
AE
AG
AK
AM
AP
AR
AT
AV
AX
AZ
BE
BG
BK
BM
BP
BR
BT
BV
BX
BZ
CE
CG
CK
CM
CP
CR
CT
CV
CX
CZ
DE
DG
DK
DM
DP
DR
DT
DV
DX
DZ
EE
EG
EK
EM
EP
ER
UNI-
KE
KG
KK
KM
KP
KR
KT
KV
KX
KZ
LE
LG
LK
LM
LP
LR
LT
LV
LX
LZ
ME
MG
MK
MM
MP
MR
MT
MV
MX
MZ
NE
NG
NK
NM
NP
NR
NT
NV
NX
NZ
PE
PG
PK
PM
PP
PR
6. Suffix C denotes Bi-directional device.
7. V
BR
measured with I
T
current pulse = 300μs
8. For Bi-Directional devices having V
RWM
of 10V and under, the I
R
is doubled.
SMBJ5.0(C)A - SMBJ170(C)A
Document number: DS19002 Rev. 17 - 2
2 of 5
www.diodes.com
June 2009
© Diodes Incorporated
SMBJ5.0(C)A - SMBJ170(C)A
100
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT
10,000
Measured at
zero bias
C
T
, CAPACITANCE (pF)
75
Uni-directional
1000
50
Bi-directional
100
25
10 X 1000 Waveform
as defined by REA
0
0
25
50
75
100
125
150
175 200
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Pulse Derating Curve
10
1
T
j
= 25
°
C
f = 1.0 MHz
V
sig
= 50 mV p-p
10
100
1000
V
RWM
, REVERSE STANDOFF VOLTAGE (V)
Fig. 2 Typical Total Capacitance
100
T
j
= 25
°
C
P
PK
, PEAK PULSE POWER (kW)
Non Repetitive
Pulse Waveform
Shown in Fig. 4
10
1.0
0.1
0.1
1.0
10
100
1000
10000
I
PP
, PEAK PULSE CURRENT (%I
pp
)
t, TIME (ms)
Fig. 4 Pulse Waveform
PM
(AV),
STEADY STATE POWER DISSIPATION (W)
120
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
Pulse Width 8.3ms
Single Half-Sine-Wave
5.0
100
4.0
80
3.0
60
2.0
40
1.0
20
0
1
2
5
10
20
50
100
0.0
0
25
50
75
100
125
150
175
200
T
L
, LEAD TEMPERATURE (
°
C)
Fig. 6 Steady State Power Derating Curve
NUMBER OF CYCLES AT 60Hz
Fig. 5 Maximum Non-Repetitive Surge Current
SMBJ5.0(C)A - SMBJ170(C)A
Document number: DS19002 Rev. 17 - 2
3 of 5
www.diodes.com
June 2009
© Diodes Incorporated
SMBJ5.0(C)A - SMBJ170(C)A
Ordering Information
Part Number
SMBJXXX(C)A-13-F
*x = Device Voltage, e.g., SMBJ170A-13-F.
Notes:
9. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
(Note 9)
Case
SMB
Packaging
3000/Tape & Reel
Marking Information
YWW
xx
xx = Product type marking code (See Page 2)
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year (ex: 2 for 2002)
WW = Week code 01 to 52
Package Outline Dimensions
B
A
C
D
J
SMB
Dim
Min
Max
A
3.30
3.94
B
4.06
4.57
C
1.96
2.21
D
0.15
0.31
E
5.00
5.59
G
0.05
0.20
H
0.76
1.52
J
2.00
2.62
All Dimensions in mm
H
E
G
Suggested Pad Layout
C
X
Y
G
Z
Dimensions Value (in mm)
Z
6.8
G
1.8
X
2.3
Y
2.5
C
4.3
SMBJ5.0(C)A - SMBJ170(C)A
Document number: DS19002 Rev. 17 - 2
4 of 5
www.diodes.com
June 2009
© Diodes Incorporated
SMBJ5.0(C)A - SMBJ170(C)A
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
SMBJ5.0(C)A - SMBJ170(C)A
Document number: DS19002 Rev. 17 - 2
5 of 5
www.diodes.com
June 2009
© Diodes Incorporated
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参数对比
与SMBJ43A-13相近的元器件有:SMBJ13A-13。描述及对比如下:
型号 SMBJ43A-13 SMBJ13A-13
描述 Trans Voltage Suppressor Diode, 600W, 43V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2 Trans Voltage Suppressor Diode, 600W, 13V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2
是否Rohs认证 不符合 不符合
厂商名称 Diodes Incorporated Diodes Incorporated
包装说明 R-PDSO-C2 R-PDSO-C2
针数 2 2
Reach Compliance Code not_compliant _compli
ECCN代码 EAR99 EAR99
最大击穿电压 54.9 V 16.5 V
最小击穿电压 47.8 V 14.4 V
击穿电压标称值 51.35 V 15.45 V
最大钳位电压 69.4 V 21.5 V
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 R-PDSO-C2 R-PDSO-C2
JESD-609代码 e0 e0
湿度敏感等级 1 1
最大非重复峰值反向功率耗散 600 W 600 W
元件数量 1 1
端子数量 2 2
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 235 235
极性 UNIDIRECTIONAL UNIDIRECTIONAL
最大功率耗散 5 W 5 W
认证状态 Not Qualified Not Qualified
最大重复峰值反向电压 43 V 13 V
表面贴装 YES YES
技术 AVALANCHE AVALANCHE
端子面层 Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15)
端子形式 C BEND C BEND
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 10 10
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